© 2011 IXYS All rights reserved 1 - 6
20110407d
GWM 120-0075X1
IXYS reserves the right to change limits, test conditions and dimensions.
VDSS = 75 V
ID25 = 110 A
RDSon typ. = 4.0 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
S2
L-
L1
L2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L+
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon on chip level at TVJ = 25°C
VGS = 10 V ; ID = 60 A TVJ = 125°C
4.0
7.2
4.9
8.4
mW
mW
VGS(th) VDS = 20 V; ID = 1 mA 2 4 V
IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C 0.1
1 µA
mA
IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA
Qg
Qgs
Qgd
VGS = 10 V; VDS = 36 V; ID = 25 A
115
30
30
nC
nC
nC
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 30 V
ID = 80 A; RG = 39 Ω
inductive load TVJ = 125°C
130
100
500
100
ns
ns
ns
ns
Eon
Eoff
Erecoff
0.20
0.50
0.01
mJ
mJ
mJ
RthJC
RthJH with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 75 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
110
85
A
A
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
110
80
A
A
Surface Mount DeviceStraight leads
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
© 2011 IXYS All rights reserved 2 - 6
20110407d
GWM 120-0075X1
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
300 A
TVJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~
FCmounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin to chip with heatsink compound 0.6 mW
CPcoupling capacity between shorted
pins and mounting tab in the case
160 pF
Weight typ. 25 g
Source-Drain Diode
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 80 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 80 A; -diF/dt = 800 A/µs
VR = 30 V; TJ = 125°C
55
0.9
30
ns
µC
A
© 2011 IXYS All rights reserved 3 - 6
20110407d
GWM 120-0075X1
IXYS reserves the right to change limits, test conditions and dimensions.
Leads Ordering Part Name &
Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering
Code
Straight Standard GWM 120-0075X1 - SL GWM 120-0075X1 Blister 28 505 960
SMD Standard GWM 120-0075X1 - SMD GWM 120-0075X1 Blister 28 505 581
Straight Leads GWM 120-0075X1-SL
1 ±0,05
5 ±0,05
0,5 ±0,02
25 +0,20
53 ±0,15
37,5 +0,20
1 ±0,05
(11x) 3 ±0,05
4 ±0,05
(3x) 6 ±0,05
12 ±0,05
1,5
4,5
2,1
Surface Mount Device GWM 120-0075X1-SMD
25 +0,20
5 ±0,05
39 ±0,15
4 ±0,05
1 ±0,05
R1 ±0,2
0,5 ±0,02
5° ±2°
1 ±0,05
5 ±0,10
(3x) 6 ±0,05
12 ±0,05
(11x) 3 ±0,05
37,5 +0,20
1,5
4,5
2,1
G1S1G2S2G3S3G4S4G5S5G6S6
L+L-L1L2L3
G1S1G2S2G3S3G4S4G5S5G6S6
L+L-L1L2L3
© 2011 IXYS All rights reserved 4 - 6
20110407d
GWM 120-0075X1
IXYS reserves the right to change limits, test conditions and dimensions.
-25 0 25 50 75 100 125 150
0,4
0,8
1,2
1,6
2,0
2
4
6
8
10
12
0123456
0
50
100
150
200
250
300
VDS [V]
0123456
ID [A]
0
50
100
150
200
250
300
VGS [V]
01234567
ID [A]
0
50
100
150
200
250
6 V
5.5 V
7 V
-25 0 25 50 75 100 125 150
0,7
0,8
0,9
1,0
1,1
1,2
TJ [°C]
TJ = 25°C
TJ = 125°C
4.5 V
4 V
TJ = 25°C
7 V
6.5 V
6 V
4 V
ID [A]
0 50 100 150 200 250 300
RDS(ON) Normalized
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10 V
15 V
TJ = 125°C
IDSS = 0.25 mA VDS = 30 V
5 V
5.5 V
5 V
6.5 V
RDS(on)
RDS(on) [mΩ]
VGE = 10 V
ID = 125 A
TJ [°C]
4 V 4.5 V 5.5 V
5 V 6 V
6.5 V
7 V
VGS = 10 V
ID = 125 A
20 V
4.5 V
10 V
VGS =
20 V
15 V
VDSS [V] Normalized
RDS(on) normalized
VGS =
20 V
15 V
10 V
TJ = 125°C
RDS(ON) Normalized
VDS [V]
ID [A]
Fig. 1 Drain source breakdown voltage VDSS
vs. junction temperature TVJ
Fig. 2 Typical transfer characteristic
Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic
Fig. 5 Drain source on-state resistance RDS(on)
versus junction temperature TJ
Fig. 6 Drain source on-state
resistance RDS(on) versus ID
© 2011 IXYS All rights reserved 5 - 6
20110407d
GWM 120-0075X1
IXYS reserves the right to change limits, test conditions and dimensions.
QG [nC]
0 20 40 60 80 100 120 140
ID - [A]
0
2
4
6
8
10
12
14
td(on)
tr
VGS [V]
0 20 40 60 80 100 120 140
0.0
0.1
0.2
0.3
0.4
0.5
0
40
80
120
160
200
0 20 40 60 80 100 120 140
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
100
200
300
400
500
600
700
800
900
1000
0 20 40 60 80 100 120
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
50
100
150
200
250
300
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
200
400
600
800
1000
1200
1400
1600
1800
TJ [°C]
0 20 40 60 80 100 120 140 160 180
0
20
40
60
80
100
120
140
Eon
Eon, Erec(off) [mJ]
ID [A] ID [A]
t [ns]
Eoff tf
td(off)
t [ns]
td(on)
tr
RG [Ω]
Eoff [mJ]
t [ns]
RG [Ω]
Eoff
td(off)
tf
Eoff [mJ]
ID = 125 A
TJ = 25°C
VDS = 15 V
VDS = 55 V
VDS = 30 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C
Eon, Erec(off) [mJ]
t [ns]
VDS = 30 V
VGS = +10/0 V
ID = 125 A
TJ = 125°C
VDS = 30 V
VGS = +10/0 V
ID = 125 A
TJ = 125°C
Erec(off) x10
Eon
Erec(off) x10
VDS = 30 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C
Fig.7 Gate charge characteristic Fig. 8 Drain current ID vs. case temperature TC
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
© 2011 IXYS All rights reserved 6 - 6
20110407d
GWM 120-0075X1
IXYS reserves the right to change limits, test conditions and dimensions.
-diF/dt [A/µs]
200 400 600 800 1000 1200 1400
IRM [A]
10
15
20
25
30
35
40
45
50
-diF /dt [A/µs]
400 600 800 1000 1200 1400
trr [ns]
50
55
60
65
70
VSD [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS [A]
0
50
100
150
200
250
-diF/dt [A/µs]
400 600 800 1000 1200 1400
Qrr [µC]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TJ = -25°C
25°C
125°C
150°C
Time [ms]
1 10 100 1000 10000
Thermal Response [K/W]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR = 30 V
TVJ = 125°C
40 A
80A
125 A
40 A
80 A
125 A
VR = 30 V
TVJ = 125°C
VR = 30 V
TVJ = 125°C
40 A
80A
125 A
GWM 120-0075X1
Fig. 13 Reverse recovery time trr
of the body diode vs. di/dt
Fig. 14 Reverse recovery current IRM
of the body diode vs. di/dt
Fig. 15 Reverse recovery charge Qrr
of the body diode vs. di/dt
Fig. 16 Source current IS vs.
source drain voltage VSD (body diode)
Fig. 17 Definition of switching times Fig. 18 Typ. therm. impedance junction
to heatsink ZthJC
0.9 VGS
0.1 VGS
0.9 ID0.9 ID
0.1 ID
VGS
VDS
ID
0.1 ID
t
t
trtf
td(on) td(off)
