VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 1Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD5110X01 is a high speed and high sensitive PIN
photodiode. It is a low profile surface mount device (SMD)
including the chip with a 7.5 mm2 sensitive area and a
daylight blocking filter matched with IR emitters operating at
wavelength 870 nm or 950 nm.
FEATURES
• Package type: surface mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm2): 7.5
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm
to 950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data
transmissionsystems, e.g. road cash systems
• Photodiode for smoke detectors
• Photodiode for rain sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
VEMD5110X01 48 ± 65 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD5110X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view
VEMD5110X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR20 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj110 °C
Operating temperature range Tamb -40 to +110 °C
Storage temperature range Tstg -40 to +110 °C
Soldering temperature Acc. reflow sloder profile fig. 8 Tsd 260 °C
Thermal resistance junction/ambient RthJA 350 K/W
ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESDHBM ≥ 2 kV
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 2Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF11.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 20 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
VR = 3 V, f = 1 MHz, E = 0 CD25 40 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo -2.6 mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik45 μA
Temperature coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 40 48 μA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp940 nm
Range of spectral bandwidth λ 0.5 790 to 1050 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 3Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
10
12787
VR = 5 V
λ = 950 nm
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
12788
I
ra
- Reverse Light Current (µA)
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1 100
110
94 8426
S(λ)rel - Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 4Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Drawing- No.: 6.550-5329.01-4
Issue: 2; 03.03.2016
C
Not indicated tolerances ± 0.1 Technical drawings
according to DIN
specication
1
1
5.2
1
Center of device
Recommended footprint
Optical
window
Top view
Bottom view
4
5
0.9 ± 0.15
Tie bar, electrically connected to cathode
2.1
0.8 1.2
0.9
1.2
2.5
0.8
0.8
0.6 (4 x)
3.1
Exposed pad
(cathode)
1.8
3
3
0.4 (4 x)
2
2
Optical
center
C (20 : 1)
0.2
0.1
1.8
4.1
Cathode
0.6
NC
Anode
0.65
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 5Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE AND REEL DIMENSIONS in millimeters
Drawing-No.: 9.800-5129.01-4;
Issue: 1; 20.07.2015
X
B-B ( 2 : 1 )
X
B
B
Reel-design is reperesentative for different types
Unreel direction
Label posted
here
0.3
1.42
Ø 1.5
Ø 1.55
8
2
1.75
5.5
Anode
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 6Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: Level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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