LTC5532
1
5532f
802.11a, 802.11b, 802.11g, 802.15
Multimode Mobile Phone Products
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
Temperature Compensated Internal Schottky
Diode RF Detector
Wide Input Frequency Range: 300MHz to 7GHz*
Wide Input Power Range: –32dBm to 10dBm
Buffered Detector Output with External Gain Control
Precision V
OUT
Offset Control
Low Starting Voltage: 120mV ±35mV for Gain = 2x
Wide V
CC
Range of 2.7V to 6V
Low Operating Current: 500µA
Available in a Low Profile (1mm) SOT-23 Package
and Tiny 6-Lead (2mm × 2mm) DFN Package
Precision 300MHz to 7GHz
RF Detector with Gain
and Offset Adjustment
The LTC
®
5532 is an RF power detector for RF applications
operating in the 300MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small ThinSOT
TM
or (2mm ×
2mm) DFN package. The supply voltage range is opti-
mized for operation from a single lithium-ion cell or 3×
NiMH.
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the V
OUT
pin.
The LTC5532 output buffer gain is set via external resis-
tors. The initial starting voltage of 120mV ±35mV can be
precisely adjusted using the V
OS
pin.
The LTC5532 operates with RF input power levels from
–32dBm to 10dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation.
300MHz to 7GHz RF Power Detector
(SOT-23 Package)
Output Voltage vs RF Input Power
(SOT-23 Package)
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
DESCRIPTIO
U
FEATURES
APPLICATIO S
U
TYPICAL APPLICATIO
U
LTC5532ES6
1
2
3
6
5
4
100pF 0.1µF
V
CC
V
OS
REFERENCE
V
CC
V
OUT
RF
IN
GND
V
OS
33pF
5532 TA01
RF
INPUT
V
M
R
A
R
B
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 TA02
–32 –27 –22 –17 –12 –7 –2 3 8
V
CC
= 3.6V
T
A
= 25°C
GAIN = 2
V
OS
= 0V
7000MHz
6000MHz
5000MHz
1000MHz
3000MHz
4000MHz
2000MHz
300MHz
LTC5532
2
5532f
V
CC
, V
OUT
, V
M
, V
OS
..................................0.3V to 6.5V
RF
IN
Voltage ......................................(V
CC
± 1.5V) to 7V
RF
IN
Power (RMS)............................................. 12dBm
I
VOUT
...................................................................... 5mA
Operating Temperature Range (Note 2) .. 40°C to 85°C
ABSOLUTE AXI U RATI GS
W
WW
U
PACKAGE/ORDER I FOR ATIO
UUW
(Note 1)
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ORDER PART
NUMBER
S6 PART MARKING
T
JMAX
= 125°C, θ
JA
= 250°C/W LTAFS
LTC5532ES6
6 V
CC
5 V
OUT
4 V
M
RF
IN
1
TOP VIEW
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
GND 2
V
OS
3
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ 65°C to 125°C
Lead Temperature (Soldering, 10 sec)
SOT-23 Only ......................................................... 300°C
ORDER PART
NUMBER
DC6 PART MARKING
LAFR
LTC5532EDC
TOP VIEW
DC6 PACKAGE
6-LEAD (2mm × 2mm) PLASTIC DFN
4
5
6
3
2
1V
CC
V
OUT
V
M
RF
IN
GND
V
OS
7
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at V
OUT
is measured between 1.3V and 2.3V.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
Note 7: Higher frequency operation is achievable with reduced
performance. Consult factory for more information.
T
JMAX
= 125°C, θ
JA
= 85°C/W
EXPOSED PAD (PIN 7) IS GND,
MUST BE SOLDERED TO PCB
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 1k, VOS = 0V unless
otherwise noted (Note 2).
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
CC
Operating Voltage 2.7 6 V
I
VCC
Operating Current I
VOUT
= 0mA 0.5 0.7 mA
V
OUT
V
OL
(No RF Input) R
LOAD
= 2k, V
OS
= 0V 85 100 to 140 155 mV
V
OUT
Output Current V
OUT
= 1.75V, V
CC
= 2.7V, V
OUT
< 10mV 24 mA
V
OUT
Bandwidth C
LOAD
= 33pF, R
LOAD
= 2k (Note 4) 2 MHz
V
OUT
Load Capacitance (Note 6) 33 pF
V
OUT
Slew Rate V
RFIN
= 1V Step, C
LOAD
= 33pF, Total R
LOAD
= 2k (Note 3) 3 V/µs
V
OUT
Noise V
CC
= 3V, Noise BW = 1.5MHz, 50 RF Input Termination, 1 mV
P-P
50 AC Output Termination
V
OS
Voltage Range 01V
V
OS
Input Current V
OS
= 1V –0.5 0.5 µA
V
M
Voltage Range 0V
CC
-1. 8 V
V
M
Input Current V
M
= 3.6V –0.5 0.5 µA
RF
IN
Input Frequency Range (Note 7) 300 to 7000 MHz
RF
IN
Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V
CC
= 2.7V to 6V –32 to 10 dBm
RF
IN
AC Input Resistance F = 1000MHz, Pin = –25dBm 220
RF
IN
Input Shunt Capacitance F = 1000MHz, Pin = –25dBm 0.65 pF
LTC5532
3
5532f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Output Delay vs RF Input Power
Typical Detector Characteristics,
300MHz, Gain = 2, VOS = 0V Typical Detector Characteristics,
1000MHz, Gain = 2, VOS = 0V Typical Detector Characteristics,
2000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
3000MHz, Gain = 2, VOS = 0V Typical Detector Characteristics,
4000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
5000MHz, Gain = 2, VOS = 0V
(SOT-23 Package)
Output Voltage vs Supply Voltage
(RF Input Signal Off) Supply Current vs Supply Voltage
(RF Input Signal Off)
(RLOAD = 20k) Characteristics are for both packages
unless otherwise indicated.
SUPPLY VOLTAGE (V)
2.5
130
125
120
115
110 5.0
5532 G01
4.53.5 5.54.03.0 6.0
V
OUT
OUTPUT VOLTAGE (mV)
V
OS
= 0V
GAIN = 2
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
SUPPLY VOLTAGE (V)
2.5
500
480
460
440
420 5.0
5532 G02
4.53.5 5.54.03.0 6.0
SUPPLY CURRENT (µA)
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
RF INPUT POWER (dBm)
–10
OUTPUT DELAY (ns)
10
5532 G03
–5 05
1000
800
600
400
200
0
V
CC
= 3.6V
T
A
= 25°C
V
OS
= 0V
GAIN = 2
90% SWITCHING
50% SWITCHING
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G04
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G05
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G06
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G07
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G08
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G09
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
LTC5532
4
5532f
Typical Detector Characteristics,
300MHz, Gain = 4, VOS = 0V
Typical Detector Characteristics,
1000MHz, Gain = 4, VOS = 0V VOUT vs RF Input Power and VOS,
300MHz, Gain = 2
VOUT vs RF Input Power and VOS,
1000MHz, Gain = 2
Typical Detector Characteristics,
6000MHz, Gain = 2, VOS = 0V
(SOT-23 Package)
Typical Detector Characteristics,
7000MHz, Gain = 2, VOS = 0V
(SOT-23 Package)
VOUT vs RF Input Power, 300MHz
and 1000MHz, Gain = 2 and 4,
VOS = 0V
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G07
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G11
–32 –27 –22 –17 –12 –7 –2 3 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G12
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G13
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = –40°C
TA = 85°C
TA = 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G14
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
TA = 25°C
VOS = 1V
VOS = 0.5V
VOS = 0.2V VOS = 0V
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G15
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
V
OS
= 1V
V
OS
= 0.5V
V
OS
= 0.2V V
OS
= 0V
V
CC
= 3.6V
T
A
= 25°C
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5532 G16
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
300MHz
GAIN = 4
1000MHz
GAIN = 2
1000MHz
GAIN = 4
300MHz
GAIN = 2
VCC = 3.6V
TA = 25°C
TYPICAL PERFOR A CE CHARACTERISTICS
UW
(RLOAD = 20k) Characteristics are for both packages
unless otherwise indicated.
LTC5532
5
5532f
VOUT Slope vs RF Input Power
at 300MHz VOUT Slope vs RF Input Power
at 1000MHz VOUT Slope vs RF Input Power
at 2000MHz
VOUT Slope vs RF Input Power
at 3000MHz VOUT Slope vs RF Input Power
at 4000MHz VOUT Slope vs RF Input Power
at 5000MHz (SOT-23 Package)
VOUT Slope vs RF Input Power
at 6000MHz (SOT-23 Package) VOUT Slope vs RF Input Power
at 7000MHz (SOT-23 Package)
RF INPUT POWER (dBm)
–30
VOUT SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G17
–20 –15 –10 0–5
VCC = 3.6V
GAIN = 2
VOS = 0V
TA = –40°C
TA = 85°C
TA = 25°C
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G18
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
RF INPUT POWER (dBm)
–30
VOUT SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G19
–20 –15 –10 0–5
TA = –40°C
TA = 85°C
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
RF INPUT POWER (dBm)
–30
VOUT SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G20
–20 –15 –10 0–5
TA = –40°C
TA = 85°C
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G21
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G22
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
RF INPUT POWER (dBm)
–30
VOUT SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G23
–20 –15 –10 0–5
TA = –40°C
TA = 85°C
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
RF INPUT POWER (dBm)
–30
VOUT SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G22
–20 –15 –10 0–5
TA = –40°C
TA = 85°C
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
TYPICAL PERFOR A CE CHARACTERISTICS
UW
(RLOAD = 20k) Characteristics are for both packages
unless otherwise indicated.
LTC5532
6
5532f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Typical Detector Characteristics
5000MHz, Gain = 2, VOS = 0V
(DFN Package)
Output Voltage vs RF Input Power
(DFN Package) VOUT Slope vs RF Input Power
at 5000MHz (DFN Package)
VOUT Slope vs RF Input Power
at 6000MHz (DFN Package) VOUT Slope vs RF Input Power
at 7000MHz (DFN Package)
(DFN package, RLOAD = 20k)
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–8 –4 0 4
3600
5532 G25
800
–28 –24 –20 –16 –12 8
2400
2800
3200
T
A
= –40°C
V
CC
= 3.6V
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
0
VOUT OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–8 –4 0 4
3600
5532 G26
800
–28 –24 –20 –16 –12 8
2400
2800
3200
TA = –40°C
VCC = 3.6V
TA = 25°C
TA = 85°C
RF INPUT POWER (dBm)
–32
0
VOUT OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–8 –4 0 4
3600
5532 G27
800
–28 –24 –20 –16 –12 8
2400
2800
3200
TA = –40°C
VCC = 3.6V
TA = 25°C
TA = 85°C
Typical Detector Characteristics
6000MHz, Gain = 2, VOS = 0V
(DFN Package)
Typical Detector Characteristics
7000MHz, Gain = 2, VOS = 0V
(DFN Package)
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G29
–20 –15 –10 0–5
T
A
= –40°CT
A
= 85°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= 25°C
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G30
–20 –15 –10 0–5
T
A
= –40°CT
A
= 85°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= 25°C
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5532 G31
–20 –15 –10 0–5
T
A
= –40°CT
A
= 85°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= 25°C
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
2000
2400
2800
8
5532 G28
1600
1200
0–22 –12 –2
–27 –17 –7 3
800
400
3600
V
CC
= 3.6V
T
A
= 25°C
GAIN = 2
V
OS
= 0V
3200 300MHz
1GHz
2GHz
4GHz
5GHz
6GHz
7GHz
LTC5532
7
5532f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) ()()
0.30 290.45 136.22
0.50 234.41 162.54
0.70 178.25 170.53
0.90 137.31 159.89
1.10 109.17 147.57
1.30 86.30 136.18
1.50 68.65 121.74
1.70 57.48 107.60
1.90 49.79 96.72
2.10 43.56 86.70
2.30 38.67 77.91
2.50 34.82 70.13
2.70 31.68 62.86
2.90 29.13 56.01
3.10 27.17 49.83
3.30 25.73 44.24
3.50 24.56 39.74
3.70 23.18 35.35
3.90 22.31 30.62
4.10 20.73 26.88
4.30 19.88 22.31
4.50 19.40 18.23
4.70 19.05 14.25
4.90 19.08 10.21
5.10 19.55 6.30
5.30 20.85 2.84
5.50 21.94 1.49
5.70 20.60 0.07
5.90 19.29 2.99
6.10 18.69 6.61
6.30 18.53 10.39
6.50 18.74 14.35
6.70 19.79 17.91
6.90 19.75 20.77
7.00 19.99 22.47
5508 TA03
S11 Forward Reflection
Impedance
(SOT-23 Package)
LTC5532
8
5532f
S11 Forward Reflection
Impedance
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) ()()
0.30 216.45 76.47
0.50 190.63 98.28
0.70 161.98 112.03
0.90 133.17 111.53
1.10 113.08 109.05
1.30 94.55 107.08
1.50 75.33 98.50
1.70 63.52 88.19
1.90 55.19 80.05
2.10 48.64 72.23
2.30 43.73 64.81
2.50 39.71 58.31
2.70 36.47 52.27
2.90 33.69 46.77
3.10 31.61 41.25
3.30 29.78 36.61
3.50 28.27 32.39
3.70 26.63 28.12
3.90 26.12 23.97
4.10 24.20 20.75
4.30 23.28 16.69
4.50 22.60 12.77
4.70 22.21 9.08
4.90 22.15 5.24
5.10 22.61 1.58
5.30 23.90 1.53
5.50 24.97 2.62
5.70 23.51 4.00
5.90 22.25 6.94
6.10 21.57 10.62
6.30 21.43 14.02
6.50 21.69 17.77
6.70 22.68 21.24
6.90 22.81 24.21
7.00 23.07 25.56
5508 TA04
TYPICAL PERFOR A CE CHARACTERISTICS
UW
(SOT-23 Package)
LTC5532
9
5532f
S11 Forward Reflection
Impedance
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) ()()
0.30 305.23 144.87
0.50 238.58 173.62
0.70 185.32 177.82
0.90 142.06 167.59
1.10 111.93 152.80
1.30 90.59 139.47
1.50 75.22 126.45
1.70 63.37 114.14
1.90 53.84 103.83
2.10 47.11 94.33
2.30 41.34 85.18
2.50 37.00 76.93
2.70 33.60 69.47
2.90 30.96 62.66
3.10 28.55 56.74
3.30 26.36 51.02
3.50 24.52 45.95
3.70 23.12 40.97
3.90 22.01 36.25
4.10 21.13 31.82
4.30 20.44 27.51
4.50 19.85 23.69
4.70 19.42 20.18
4.90 19.03 16.54
5.10 18.78 12.88
5.30 18.69 9.21
5.50 18.80 5.72
5.70 19.09 2.32
5.90 19.68 0.85
6.10 20.05 3.49
6.30 20.18 6.37
6.50 20.35 9.23
6.70 19.84 12.37
6.90 19.81 15.97
7.00 19.95 17.83
5508 TA05
(DFN Package)
TYPICAL PERFOR A CE CHARACTERISTICS
UW
LTC5532
10
5532f
S11 Forward Reflection
Impedance
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) ()()
0.30 225.19 79.32
0.50 196.59 105.44
0.70 166.23 114.07
0.90 137.24 115.88
1.10 114.69 111.94
1.31 96.83 106.10
1.50 83.12 99.28
1.70 72.11 92.73
1.90 61.69 85.98
2.10 53.76 78.71
2.31 47.46 71.16
2.51 42.60 64.52
2.70 39.04 58.61
2.90 36.25 53.23
3.10 33.41 48.13
3.30 30.78 43.37
3.50 28.85 38.83
3.70 27.28 34.09
3.90 26.08 29.73
4.10 24.97 25.80
4.30 24.18 21.94
4.50 23.43 18.27
4.70 22.88 15.04
4.90 22.41 11.56
5.10 22.09 8.08
5.30 21.82 4.34
5.50 21.91 1.29
5.70 22.08 2.15
5.90 22.84 5.32
6.10 23.75 7.51
6.30 23.32 9.47
6.50 22.57 12.41
6.70 22.17 15.79
6.90 22.20 19.34
7.00 22.27 21.21
(DFN Package)
TYPICAL PERFOR A CE CHARACTERISTICS
UW
5508 TA06
LTC5532
11
5532f
BLOCK DIAGRA
W
UU
U
PI FU CTIO S
RF
IN
(Pin 1/Pin 6): RF Input Voltage. Referenced to V
CC
.
A coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 7GHz.
This pin has an internal 500 termination, an internal
Schottky diode detector and a peak detector capacitor.
Operation at higher frequencies is achievable, consult
factory for more information.
GND (Pin 2/Pin 5): Ground.
V
OS
(Pin 3/Pin 4): V
OUT
Offset Voltage Adjustment. From
0V to 120mV, V
OUT
does not change. Above 120mV, V
OUT
will track V
OS
.
V
M
(Pin 4/Pin 3): Inverting Input to Buffer Amplifier.
V
OUT
(Pin 5/Pin 2): Detector Output.
VCC (Pin 6/Pin 1): Power Supply Voltage, 2.7V to 6V. VCC
should be bypassed appropriately with ceramic capaci-
tors.
Exposed Pad (NA/Pin 7): Exposed Pad is GND. Must be
soldered to PCB.
(SOT-23/DFN)
+
+
5532 BD
25pF
VOUT
GND
VM
VOS
BUFFER
500
500
RF DET
50µA50µA80k
BIAS
RFSOURCE
RFIN
VCC
31k
24k
+
+
120mV
80k
LTC5532
12
5532f
APPLICATIO S I FOR ATIO
WUUU
Operation
The LTC5532 RF detector integrates several functions to
provide RF power detection over frequencies ranging from
300MHz to 7GHz. These functions include an internal fre-
quency compensated buffer amplifier, an RF Schottky di-
ode peak detector and a level shift amplifier to convert the
RF input signal to DC. The LTC5532 has both gain setting
and voltage offset adjustment capabilities.
Buffer Amplifier
The output buffer amplifier is capable of supplying typi-
cally 4mA into a load. The negative terminal V
M
is brought
out to a pin for gain selection. External resistors connected
between V
OUT
and V
M
(R
A
) and V
M
to ground (R
B
) will set
the gain of this amplifier.
Gain = 1 + R
A
/R
B
The amplifier is unity gain stable; however a minimum
gain of two is recommended to improve low output
voltage accuracy. The amplifier has a bandwidth of 2MHz
with a gain of 2. For increased gain applications, the
bandwidth is reduced according to the formula:
Bandwidth = 4MHz/(Gain) = 4MHz • R
B
/(R
A
+ R
B
)
A capacitor can be placed across the feedback resistor RA
to shape the frequency response. In addition, the ampli-
fier can be used as a comparator. VM can be connected to
a reference voltage. When the internal detector output
voltage (which is connected to the positive input of the
buffer amplifier) exceeds the external voltage on VM, VOUT
will switch high.
The V
OS
input controls the DC input voltage to the buffer
amplifier. V
OS
must be connected to ground if the DC
starting voltage is not to be changed. The buffer is initially
trimmed nominally to 120mV (Gain = 2x) with V
OS
con-
nected to ground.
The V
OS
pin is used to change the initial V
OUT
starting
voltage. This function, in combination with gain adjust-
ment enables the LTC5532 output to span the input range
of a variety of analog-to-digital converters. V
OUT
will not
change until V
OS
exceeds 120mV. The starting voltage at
V
OUT
for V
OS
>120mV is:
V
OUT
= 0.5 • V
OS
• Gain
where gain is the output buffer gain. For a buffer gain of 2x,
V
OUT
will exactly track V
OS
above 120mV.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier convert the RF input signal to a low fre-
quency signal. The detector demonstrates excellent effi-
ciency and linearity over a wide range of input power. The
Schottky diode is biased at about 55µA and drives a 25pF
internal peak detector capacitor.
Demo Board Schematic
RF
IN
GND
V
OS
V
CC
V
OUT
V
M
LTC5532ES6
1
2
3
6
5
4
C4
39pF
RF
IN
R1
(OPT)
OFFSET
ADJUSTMENT
C2
100pF
C1
0.1µF
C3
(OPT)
V
CC
2.7V TO 6V
V
OUT
GND
R2
10k
1%
R3
10k
1%
5532 DB
LTC5532
13
5532f
APPLICATIO S I FOR ATIO
WUUU
Figure 2. Mobile Phone Tx Power Control Application Diagram with a Capacitive Tap
Applications
The LTC5532 can be used as a self-standing signal strength
measuring receiver for a wide range of input signals from
–32dBm to 10dBm for frequencies from 300MHz to 7GHz.
Operation at higher frequencies, to 12GHz or above, is
achievable with reduced performance. The smaller DFN
package version is recommended for these applications
because of its lower parasitics. Figure 1 plots the output
voltage as a function of RF power of a 12GHz CW input
signal.
The LTC5532 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the RSSI output
can be split between two branches, providing AC-coupled
data (or audio) output and DC-coupled RSSI output for
signal strength measurements and AGC.
The LTC5532 can be used for RF power detection and
control. Figure 2 is an example of a transmitter power
controller, using the LTC5532 with a capacitive tap to the
power amplifier. A 0.5pF capacitor (C1) followed by a
200 resistor (R1) form a coupling circuit with about
20dB loss at 900MHz referenced to the LTC5532 RF input
pin. In the actual product implementation, component
values for the capacitive tap may be different depending on
parts placement, PCB parasitics and parameters of the
antenna.
The LTC5532 can be configured as a comparator for RF
power detection and RF power alarms. The characteriza-
tion data includes a plot of the LTC5532 output delay in
response to a positive input step of varying RF level.
RF
IN
GND
V
OS
V
CC
V
OUT
V
M
LTC5532ES6
1
2
3
6
5
4
0.1µF
R2
R3
5532 F02
Li-Ion CELL BAND
PCS BAND
VPC
MOBILE
PHONE
DSP
OFFSET
ADJUSTMENT
DIPLEXER
TX PA
MODULE
R1
200
1%
C1
0.5pF
±0.05pF
BSE
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–8 –4 0 4
3600
5532 F01
800
–28 –24 –20 –16 –12 8
2400
2800
3200
T
A
= 25°C
Figure 1. Typical Detector Characteristics,
12GHz, Gain = 2, VOS = 0V (DFN Package)
LTC5532
14
5532f
PACKAGE DESCRIPTIO
U
DC Package
6-Lead Plastic DFN (2mm × 2mm)
(Reference LTC DWG # 05-08-1703)
2.00 ±0.10
(4 SIDES)
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WCCD-2)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE
TOP AND BOTTOM OF PACKAGE
0.38 ± 0.05
BOTTOM VIEW—EXPOSED PAD
0.56 ± 0.05
(2 SIDES)
0.75 ±0.05
R = 0.115
TYP
1.37 ±0.05
(2 SIDES)
1
3
64
PIN 1 BAR
TOP MARK
(SEE NOTE 6)
0.200 REF
0.00 – 0.05
(DC6) DFN 1103
0.25 ± 0.05
0.50 BSC
0.25 ± 0.05
1.42 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.61 ±0.05
(2 SIDES)
1.15 ±0.05
0.675 ±0.05
2.50 ±0.05
PACKAGE
OUTLINE
0.50 BSC
PIN 1
CHAMFER OF
EXPOSED PAD
LTC5532
15
5532f
PACKAGE DESCRIPTIO
U
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
1.50 – 1.75
(NOTE 4)
2.80 BSC
0.30 – 0.45
6 PLCS (NOTE 3)
DATUM ‘A’
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
2.90 BSC
(NOTE 4)
0.95 BSC
1.90 BSC
0.80 – 0.90
1.00 MAX 0.01 – 0.10
0.20 BSC
0.30 – 0.50 REF
PIN ONE ID
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
3.85 MAX
0.62
MAX 0.95
REF
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
1.4 MIN
2.62 REF
1.22 REF
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LTC5532
16
5532f
LT/TP 0304 1K • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
FAX: (408) 434-0507
www.linear.com
LINEAR TECHNOLOGY CORPORATION 2003
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