LTC5532 Precision 300MHz to 7GHz RF Detector with Gain and Offset Adjustment U FEATURES DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz* Wide Input Power Range: -32dBm to 10dBm Buffered Detector Output with External Gain Control Precision VOUT Offset Control Low Starting Voltage: 120mV 35mV for Gain = 2x Wide VCC Range of 2.7V to 6V Low Operating Current: 500A Available in a Low Profile (1mm) SOT-23 Package and Tiny 6-Lead (2mm x 2mm) DFN Package U APPLICATIO S 802.11a, 802.11b, 802.11g, 802.15 Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. The LTC5532 output buffer gain is set via external resistors. The initial starting voltage of 120mV 35mV can be precisely adjusted using the VOS pin. The LTC5532 operates with RF input power levels from -32dBm to 10dBm. , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Higher frequency operation is achievable with reduced performance. Consult factory for more information. U The LTC(R)5532 is an RF power detector for RF applications operating in the 300MHz to 7GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM or (2mm x 2mm) DFN package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3x NiMH. TYPICAL APPLICATIO Output Voltage vs RF Input Power (SOT-23 Package) 3600 33pF RF INPUT 1 RFIN VCC 6 VCC 100pF LTC5532ES6 2 VOS REFERENCE 3 GND VOUT 5 RA VOS VM 4 RB 5532 TA01 0.1F VOUT OUTPUT VOLTAGE (mV) 300MHz to 7GHz RF Power Detector (SOT-23 Package) VCC = 3.6V 3200 TA = 25C GAIN = 2 2800 VOS = 0V 1000MHz 300MHz 2400 4000MHz 2000 1600 1200 800 400 2000MHz 3000MHz 5000MHz 6000MHz 7000MHz 0 -32 -27 -22 -17 -12 -7 -2 RF INPUT POWER (dBm) 3 8 5532 TA02 5532f 1 LTC5532 W W U W ABSOLUTE AXI U RATI GS (Note 1) VCC, VOUT, VM, VOS .................................. -0.3V to 6.5V RFIN Voltage ......................................(VCC 1.5V) to 7V RFIN Power (RMS) ............................................. 12dBm IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 125C Lead Temperature (Soldering, 10 sec) SOT-23 Only ......................................................... 300C U W U PACKAGE/ORDER I FOR ATIO TOP VIEW 6 RFIN VCC 1 VOUT 2 ORDER PART NUMBER 7 VM 3 LTC5532EDC 5 GND 4 VOS DC6 PACKAGE 6-LEAD (2mm x 2mm) PLASTIC DFN TJMAX = 125C, JA = 85C/W EXPOSED PAD (PIN 7) IS GND, MUST BE SOLDERED TO PCB DC6 PART MARKING LAFR ORDER PART NUMBER TOP VIEW RFIN 1 6 VCC GND 2 5 VOUT VOS 3 4 VM LTC5532ES6 S6 PART MARKING S6 PACKAGE 6-LEAD PLASTIC TSOT-23 LTAFS TJMAX = 125C, JA = 250C/W Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 1k, VOS = 0V unless otherwise noted (Note 2). PARAMETER VCC Operating Voltage IVCC Operating Current VOUT VOL (No RF Input) VOUT Output Current VOUT Bandwidth VOUT Load Capacitance VOUT Slew Rate VOUT Noise VOS Voltage Range VOS Input Current VM Voltage Range VM Input Current RFIN Input Frequency Range RFIN Input Power Range RFIN AC Input Resistance RFIN Input Shunt Capacitance CONDITIONS IVOUT = 0mA RLOAD = 2k, VOS = 0V VOUT = 1.75V, VCC = 2.7V, VOUT < 10mV CLOAD = 33pF, RLOAD = 2k (Note 4) (Note 6) VRFIN = 1V Step, CLOAD = 33pF, Total RLOAD = 2k (Note 3) VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination, 50 AC Output Termination 0.5 100 to 140 4 2 MAX 6 0.7 155 33 3 1 VM = 3.6V (Note 7) RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V F = 1000MHz, Pin = -25dBm F = 1000MHz, Pin = -25dBm Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. 85 2 TYP VOS = 1V MIN 2.7 0 -0.5 0 -0.5 1 0.5 VCC -1. 8 0.5 300 to 7000 -32 to 10 220 0.65 UNITS V mA mV mA MHz pF V/s mVP-P V A V A MHz dBm pF Note 4: Bandwidth is calculated based on the 10% to 90% rise time equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design. Note 7: Higher frequency operation is achievable with reduced performance. Consult factory for more information. 5532f 2 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS unless otherwise indicated. Output Voltage vs Supply Voltage (RF Input Signal Off) (RLOAD = 20k) Characteristics are for both packages Supply Current vs Supply Voltage (RF Input Signal Off) 130 Output Delay vs RF Input Power 500 1000 VCC = 3.6V TA = 25C VOS = 0V GAIN = 2 TA = 25C 120 TA = -40C 115 800 480 TA = -40C 460 OUTPUT DELAY (ns) TA = 85C 125 SUPPLY CURRENT (A) TA = 25C TA = 85C 440 110 2.5 3.0 3.5 4.0 4.5 5.0 SUPPLY VOLTAGE (V) 5.5 420 2.5 6.0 3.0 3.5 4.0 4.5 5.0 SUPPLY VOLTAGE (V) 5532 G01 50% SWITCHING 3600 VCC = 3.6V VOUT OUTPUT VOLTAGE (mV) TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 3600 2800 TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 5532 G04 3600 VCC = 3.6V VOUT OUTPUT VOLTAGE (mV) 2000 TA = 25C 1200 800 400 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 4 2000 5532 G07 TA = 25C 1600 1200 800 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 3600 TA = -40C TA = 25C 1200 800 VCC = 3.6V 3200 2000 1600 8 5532 G06 VCC = 3.6V 2800 2400 4 Typical Detector Characteristics, 5000MHz, Gain = 2, VOS = 0V (SOT-23 Package) TA = 85C 400 8 TA = -40C 2400 400 3200 3200 1600 2800 Typical Detector Characteristics, 4000MHz, Gain = 2, VOS = 0V TA = -40C VCC = 3.6V 5532 G05 Typical Detector Characteristics, 3000MHz, Gain = 2, VOS = 0V 10 3200 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 2800 0 -5 5 RF INPUT POWER (dBm) Typical Detector Characteristics, 2000MHz, Gain = 2, VOS = 0V VCC = 3.6V 400 4 -10 5532 G03 3200 2800 2400 0 6.0 Typical Detector Characteristics, 1000MHz, Gain = 2, VOS = 0V 3200 3600 5.5 VOUT OUTPUT VOLTAGE (mV) 3600 VOUT OUTPUT VOLTAGE (mV) 90% SWITCHING 400 5532 G02 Typical Detector Characteristics, 300MHz, Gain = 2, VOS = 0V VOUT OUTPUT VOLTAGE (mV) 600 200 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) VOS = 0V GAIN = 2 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 2800 2400 2000 1600 8 5532 G08 TA = 25C 1200 800 400 4 TA = -40C TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 5532 G09 5532f 3 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS unless otherwise indicated. Typical Detector Characteristics, 6000MHz, Gain = 2, VOS = 0V (SOT-23 Package) Typical Detector Characteristics, 7000MHz, Gain = 2, VOS = 0V (SOT-23 Package) 3600 VCC = 3.6V 3600 VCC = 3.6V 3200 VOUT OUTPUT VOLTAGE (mV) 3200 VOUT OUTPUT VOLTAGE (mV) Typical Detector Characteristics, 300MHz, Gain = 4, VOS = 0V 2800 TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 2800 2400 TA = -40C 2000 1600 TA = 25C 1200 800 400 8 TA = 85C 0 -32 -27 -22 -17 -12 -7 -2 3 RF INPUT POWER (dBm) 5532 G07 TA = 25C 1600 1200 TA = 85C 800 400 8 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) TA = -40C 2800 2400 2000 TA = 25C 1200 800 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 2800 2400 2000 1600 1200 800 VOS = 1V VOS = 0.5V 400 4 VOS = 0.2V VOS = 0V 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 3600 VCC = 3.6V 3200 TA = 25C VCC = 3.6V 3200 TA = 25C VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) 8 VOUT vs RF Input Power, 300MHz and 1000MHz, Gain = 2 and 4, VOS = 0V 3600 2800 2400 2000 1600 VOS = 1V VOS = 0.5V 400 VOS = 0.2V VOS = 0V 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 5532 G14 VOUT vs RF Input Power and VOS, 1000MHz, Gain = 2 800 8 5532 G12 5532 G13 1200 4 VCC = 3.6V 3200 TA = 25C VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) 2000 3600 3200 400 2400 VOUT vs RF Input Power and VOS, 300MHz, Gain = 2 VCC = 3.6V 1600 TA = -40C 2800 5532 G11 Typical Detector Characteristics, 1000MHz, Gain = 4, VOS = 0V 3600 VCC = 3.6V 3200 VOUT OUTPUT VOLTAGE (mV) 3600 (RLOAD = 20k) Characteristics are for both packages 2800 300MHz GAIN = 4 1000MHz GAIN = 4 2400 2000 1600 1200 800 300MHz GAIN = 2 400 4 8 5532 G15 1000MHz GAIN = 2 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 5532 G16 5532f 4 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS unless otherwise indicated. 1000 VCC = 3.6V GAIN = 2 VOS = 0V VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) 1000 VOUT Slope vs RF Input Power at 1000MHz 100 TA = -40C TA = 85C 10 -25 1000 VCC = 3.6V GAIN = 2 VOS = 0V 100 TA = -40C TA = 85C 10 TA = 25C 1 -30 -20 -15 -10 -5 RF INPUT POWER (dBm) 1 -30 5 0 TA = 85C -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 1 -30 5 0 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) VOUT Slope vs RF Input Power at 5000MHz (SOT-23 Package) 1000 100 TA = -40C TA = 85C 10 VCC = 3.6V GAIN = 2 VOS = 0V 100 TA = -40C TA = 85C 10 TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) 5 0 1 -30 -25 TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) 1000 VOUT SLOPE (mV/dB) 100 TA = -40C TA = 85C 0 5 5532 G22 VCC = 3.6V GAIN = 2 VOS = 0V 100 TA = -40C TA = 85C 10 TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) -20 -15 -10 -5 RF INPUT POWER (dBm) VOUT Slope vs RF Input Power at 7000MHz (SOT-23 Package) VCC = 3.6V GAIN = 2 VOS = 0V -25 -25 5532 G21 VOUT Slope vs RF Input Power at 6000MHz (SOT-23 Package) 1 -30 1 -30 5 0 5532 G20 10 5 0 5532 G19 VCC = 3.6V GAIN = 2 VOS = 0V TA = 25C 1000 TA = 85C TA = 25C VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) TA = -40C VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) 1000 100 -25 TA = -40C 10 VOUT Slope vs RF Input Power at 4000MHz VCC = 3.6V GAIN = 2 VOS = 0V 1 -30 100 5532 G18 VOUT Slope vs RF Input Power at 3000MHz 10 VCC = 3.6V GAIN = 2 VOS = 0V TA = 25C 5532 G17 1000 VOUT Slope vs RF Input Power at 2000MHz VOUT SLOPE (mV/dB) VOUT Slope vs RF Input Power at 300MHz (RLOAD = 20k) Characteristics are for both packages TA = 25C 0 5 5532 G23 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5 5532 G22 5532f 5 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS Typical Detector Characteristics 5000MHz, Gain = 2, VOS = 0V (DFN Package) Typical Detector Characteristics 6000MHz, Gain = 2, VOS = 0V (DFN Package) 3600 VCC = 3.6V 3600 VCC = 3.6V 3200 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) 3200 Typical Detector Characteristics 7000MHz, Gain = 2, VOS = 0V (DFN Package) 2800 2400 TA = -40C 2000 1600 TA = 25C 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 2800 2400 TA = -40C 2000 TA = 25C 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 4 5532 G25 2800 2400 2000 1600 1200 2400 2000 TA = -40C 1600 TA = 25C 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 4 8 5532 G27 VOUT Slope vs RF Input Power at 5000MHz (DFN Package) 1000 300MHz 1GHz 2GHz 4GHz 5GHz 6GHz 7GHz VCC = 3.6V TA = 25C GAIN = 2 VOS = 0V VOUT SLOPE (mV/dB) VOUT OUTPUT VOLTAGE (mV) 3200 2800 5532 G26 Output Voltage vs RF Input Power (DFN Package) 3600 VCC = 3.6V 3200 VOUT OUTPUT VOLTAGE (mV) 3600 (DFN package, RLOAD = 20k) VCC = 3.6V GAIN = 2 VOS = 0V 100 TA = -40C 10 800 TA = 85C TA = 25C 400 0 -32 -27 -22 -17 -12 -7 -2 RF INPUT POWER (dBm) 1 -30 8 3 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 5532 G29 5532 G28 VOUT Slope vs RF Input Power at 6000MHz (DFN Package) VOUT Slope vs RF Input Power at 7000MHz (DFN Package) 1000 VCC = 3.6V GAIN = 2 VOS = 0V VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) 1000 100 10 TA = -40C TA = 85C VCC = 3.6V GAIN = 2 VOS = 0V 100 10 TA = -40C -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5 5532 G30 1 -30 TA = 85C TA = 25C TA = 25C 1 -30 5 0 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5 5532 G31 5532f 6 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 290.45 -136.22 0.50 234.41 -162.54 0.70 178.25 -170.53 0.90 137.31 -159.89 1.10 109.17 -147.57 1.30 86.30 -136.18 1.50 68.65 -121.74 1.70 57.48 -107.60 1.90 49.79 - 96.72 2.10 43.56 - 86.70 2.30 38.67 -77.91 2.50 34.82 -70.13 2.70 31.68 - 62.86 2.90 29.13 - 56.01 3.10 27.17 - 49.83 3.30 25.73 - 44.24 3.50 24.56 - 39.74 3.70 23.18 - 35.35 3.90 22.31 - 30.62 4.10 20.73 -26.88 4.30 19.88 -22.31 4.50 19.40 -18.23 4.70 19.05 -14.25 4.90 19.08 -10.21 5.10 19.55 - 6.30 5.30 20.85 - 2.84 5.50 21.94 -1.49 5.70 20.60 - 0.07 5.90 19.29 2.99 6.10 18.69 6.61 6.30 18.53 10.39 6.50 18.74 14.35 6.70 19.79 17.91 6.90 19.75 20.77 7.00 19.99 22.47 (SOT-23 Package) S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA03 5532f 7 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 216.45 -76.47 0.50 190.63 -98.28 0.70 161.98 -112.03 0.90 133.17 -111.53 1.10 113.08 -109.05 1.30 94.55 -107.08 1.50 75.33 - 98.50 1.70 63.52 - 88.19 1.90 55.19 - 80.05 2.10 48.64 -72.23 2.30 43.73 - 64.81 2.50 39.71 - 58.31 2.70 36.47 - 52.27 2.90 33.69 - 46.77 3.10 31.61 - 41.25 3.30 29.78 -36.61 3.50 28.27 -32.39 3.70 26.63 -28.12 3.90 26.12 -23.97 4.10 24.20 -20.75 4.30 23.28 -16.69 4.50 22.60 -12.77 4.70 22.21 - 9.08 4.90 22.15 -5.24 5.10 22.61 -1.58 5.30 23.90 1.53 5.50 24.97 2.62 5.70 23.51 4.00 5.90 22.25 6.94 6.10 21.57 10.62 6.30 21.43 14.02 6.50 21.69 17.77 6.70 22.68 21.24 6.90 22.81 24.21 7.00 23.07 25.56 (SOT-23 Package) S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA04 5532f 8 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 305.23 -144.87 0.50 238.58 -173.62 0.70 185.32 -177.82 0.90 142.06 -167.59 1.10 111.93 -152.80 1.30 90.59 -139.47 1.50 75.22 - 126.45 1.70 63.37 - 114.14 1.90 53.84 - 103.83 2.10 47.11 -94.33 2.30 41.34 - 85.18 2.50 37.00 - 76.93 2.70 33.60 - 69.47 2.90 30.96 - 62.66 3.10 28.55 - 56.74 3.30 26.36 -51.02 3.50 24.52 -45.95 3.70 23.12 -40.97 3.90 22.01 -36.25 4.10 21.13 -31.82 4.30 20.44 -27.51 4.50 19.85 -23.69 4.70 19.42 - 20.18 4.90 19.03 -16.54 5.10 18.78 -12.88 5.30 18.69 - 9.21 5.50 18.80 -5.72 5.70 19.09 -2.32 5.90 19.68 0.85 6.10 20.05 3.49 6.30 20.18 6.37 6.50 20.35 9.23 6.70 19.84 12.37 6.90 19.81 15.97 7.00 19.95 17.83 (DFN Package) S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA05 5532f 9 LTC5532 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 225.19 -79.32 0.50 196.59 -105.44 0.70 166.23 -114.07 0.90 137.24 -115.88 1.10 114.69 -111.94 1.31 96.83 -106.10 1.50 83.12 - 99.28 1.70 72.11 - 92.73 1.90 61.69 - 85.98 2.10 53.76 -78.71 2.31 47.46 - 71.16 2.51 42.60 - 64.52 2.70 39.04 - 58.61 2.90 36.25 - 53.23 3.10 33.41 - 48.13 3.30 30.78 -43.37 3.50 28.85 -38.83 3.70 27.28 -34.09 3.90 26.08 -29.73 4.10 24.97 -25.80 4.30 24.18 -21.94 4.50 23.43 -18.27 4.70 22.88 - 15.04 4.90 22.41 -11.56 5.10 22.09 -8.08 5.30 21.82 - 4.34 5.50 21.91 -1.29 5.70 22.08 2.15 5.90 22.84 5.32 6.10 23.75 7.51 6.30 23.32 9.47 6.50 22.57 12.41 6.70 22.17 15.79 6.90 22.20 19.34 7.00 22.27 21.21 (DFN Package) S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA06 5532f 10 LTC5532 U U U PI FU CTIO S (SOT-23/DFN) RFIN (Pin 1/Pin 6): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. Operation at higher frequencies is achievable, consult factory for more information. GND (Pin 2/Pin 5): Ground. VM (Pin 4/Pin 3): Inverting Input to Buffer Amplifier. VOUT (Pin 5/Pin 2): Detector Output. VCC (Pin 6/Pin 1): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors. Exposed Pad (NA/Pin 7): Exposed Pad is GND. Must be soldered to PCB. VOS (Pin 3/Pin 4): VOUT Offset Voltage Adjustment. From 0V to 120mV, VOUT does not change. Above 120mV, VOUT will track VOS. W BLOCK DIAGRA RFSOURCE VCC + VOUT BUFFER RFIN - 500 VM 500 BIAS 31k 25pF 24k 50A GND 50A + RF DET + 80k VOS - - 80k 120mV + 5532 BD 5532f 11 LTC5532 U W U U APPLICATIO S I FOR ATIO Operation The LTC5532 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 7GHz. These functions include an internal frequency compensated buffer amplifier, an RF Schottky diode peak detector and a level shift amplifier to convert the RF input signal to DC. The LTC5532 has both gain setting and voltage offset adjustment capabilities. Buffer Amplifier The output buffer amplifier is capable of supplying typically 4mA into a load. The negative terminal VM is brought out to a pin for gain selection. External resistors connected between VOUT and VM (RA) and VM to ground (RB) will set the gain of this amplifier. Gain = 1 + RA/RB The amplifier is unity gain stable; however a minimum gain of two is recommended to improve low output voltage accuracy. The amplifier has a bandwidth of 2MHz with a gain of 2. For increased gain applications, the bandwidth is reduced according to the formula: Bandwidth = 4MHz/(Gain) = 4MHz * RB/(RA + RB) A capacitor can be placed across the feedback resistor R A to shape the frequency response. In addition, the amplifier can be used as a comparator. VM can be connected to a reference voltage. When the internal detector output voltage (which is connected to the positive input of the buffer amplifier) exceeds the external voltage on VM, VOUT will switch high. The VOS input controls the DC input voltage to the buffer amplifier. VOS must be connected to ground if the DC starting voltage is not to be changed. The buffer is initially trimmed nominally to 120mV (Gain = 2x) with VOS connected to ground. The VOS pin is used to change the initial VOUT starting voltage. This function, in combination with gain adjustment enables the LTC5532 output to span the input range of a variety of analog-to-digital converters. VOUT will not change until VOS exceeds 120mV. The starting voltage at VOUT for VOS >120mV is: VOUT = 0.5 * VOS * Gain where gain is the output buffer gain. For a buffer gain of 2x, VOUT will exactly track VOS above 120mV. RF Detector The internal RF Schottky diode peak detector and level shift amplifier convert the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55A and drives a 25pF internal peak detector capacitor. Demo Board Schematic VCC 2.7V TO 6V RFIN C4 39pF 1 R1 (OPT) 2 3 OFFSET ADJUSTMENT C1 0.1F LTC5532ES6 RFIN VCC GND VOUT VOS VM 6 C2 100pF 5 4 C3 (OPT) VOUT R2 10k 1% R3 10k 1% GND 5532 DB 5532f 12 LTC5532 U W U U APPLICATIO S I FOR ATIO Applications The LTC5532 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 10dBm for frequencies from 300MHz to 7GHz. Operation at higher frequencies, to 12GHz or above, is achievable with reduced performance. The smaller DFN package version is recommended for these applications because of its lower parasitics. Figure 1 plots the output voltage as a function of RF power of a 12GHz CW input signal. 3600 TA = 25C VOUT OUTPUT VOLTAGE (mV) 3200 2800 2400 2000 1600 The LTC5532 can be used as a demodulator for AM and ASK modulated signals with data rates up to 2MHz. Depending on specific application needs, the RSSI output can be split between two branches, providing AC-coupled data (or audio) output and DC-coupled RSSI output for signal strength measurements and AGC. The LTC5532 can be used for RF power detection and control. Figure 2 is an example of a transmitter power controller, using the LTC5532 with a capacitive tap to the power amplifier. A 0.5pF capacitor (C1) followed by a 200 resistor (R1) form a coupling circuit with about 20dB loss at 900MHz referenced to the LTC5532 RF input pin. In the actual product implementation, component values for the capacitive tap may be different depending on parts placement, PCB parasitics and parameters of the antenna. The LTC5532 can be configured as a comparator for RF power detection and RF power alarms. The characterization data includes a plot of the LTC5532 output delay in response to a positive input step of varying RF level. 1200 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 5532 F01 Figure 1. Typical Detector Characteristics, 12GHz, Gain = 2, VOS = 0V (DFN Package) TX PA MODULE LTC5532ES6 1 2 OFFSET ADJUSTMENT 3 RFIN VCC GND VOUT VOS VM 6 0.1F Li-Ion CELL BAND R1 200 1% C1 0.5pF 0.05pF DIPLEXER 5 4 R2 PCS BAND R3 MOBILE PHONE DSP VPC 5532 F02 BSE Figure 2. Mobile Phone Tx Power Control Application Diagram with a Capacitive Tap 5532f 13 LTC5532 U PACKAGE DESCRIPTIO DC Package 6-Lead Plastic DFN (2mm x 2mm) (Reference LTC DWG # 05-08-1703) 0.675 0.05 2.50 0.05 1.15 0.05 0.61 0.05 (2 SIDES) PACKAGE OUTLINE 0.25 0.05 0.50 BSC 1.42 0.05 (2 SIDES) RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS R = 0.115 TYP 0.56 0.05 (2 SIDES) 0.38 0.05 4 6 2.00 0.10 (4 SIDES) PIN 1 BAR TOP MARK (SEE NOTE 6) PIN 1 CHAMFER OF EXPOSED PAD 3 0.200 REF 0.75 0.05 1 (DC6) DFN 1103 0.25 0.05 0.50 BSC 1.37 0.05 (2 SIDES) 0.00 - 0.05 BOTTOM VIEW--EXPOSED PAD NOTE: 1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WCCD-2) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 5532f 14 LTC5532 U PACKAGE DESCRIPTIO S6 Package 6-Lead Plastic TSOT-23 (Reference LTC DWG # 05-08-1636) 0.62 MAX 2.90 BSC (NOTE 4) 0.95 REF 1.22 REF 3.85 MAX 2.62 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.30 - 0.45 6 PLCS (NOTE 3) 0.95 BSC 0.80 - 0.90 0.20 BSC 0.01 - 0.10 1.00 MAX DATUM `A' 0.30 - 0.50 REF 0.09 - 0.20 (NOTE 3) 1.90 BSC S6 TSOT-23 0302 NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193 5532f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 15 LTC5532 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3, 50 Single Ended RF and LO Ports LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, 50 Single Ended RF and LO Ports LT5522 600MHz to 2.7GHz High Linearity Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC(R)5505 300MHz to 3GHz RF Power Detectors LTC5505-1: -28dBm to 18dBm Range, LTC5505-2: -32dBm to 12dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector -34dBm to 14dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector -32dBm to 12dBm Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package LTC5530 Precision RF Detector with Shutdown and Gain Adjustment 300MHz to 7GHz, -32dBm to 10dBm Range LTC5531 Precision RF Detector with Shutdown and Offset Adjustment 300MHz to 7GHz, -32dBm to 10dBm Range RF Building Blocks LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, -4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth LT5546 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, -7dB to 56dB Linear Power Gain RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4402 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones, 450kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW 5532f 16 Linear Technology Corporation LT/TP 0304 1K * PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com LINEAR TECHNOLOGY CORPORATION 2003