CDBU0230
Page 1
QW-A1023
REV:A
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.028(0.70) Typ.
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter Conditions Min
Max
Unit
V
35
VR
Reverse voltage V
30
IFSM
Forward current,surge peak 8.3 ms single half sine-wave superimposed
on rate load(JEDEC method) 3000
PDmW
OC
150
+125
-40
Power Dissipation
Sunction temperature
TjOC
+125
Junction temperature
TSTG
mA
IO
Average forward current mA
200
Symbol Typ
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
IRuA
Forward voltage IF = 200 mA DC VFV
0.50
9
CT
Capacitance between terimnals pF
F = 1 MHZ and 10 VDC reverse voltage
Reverse current VR = 30V 30
Features
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Low drop-down voltage.
-Majority carrier conduction.
Mechanical data
-Case: 0603 standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.003 gram(approx.).
/SOD-523F
SMD Schottky Barrier Diode
0603/SOD-523F
Io = 200 mA
VR = 30 Volts
RoHS Device
RATING AND CHARACTERISTIC CURVES (CDBU0230)
0
20
40
60
80
100
0 25 50 75 100 125 150
Mounting on glass epoxy PCBs
1
10
100
30
0 5 10
1
5
20 25 35
0 10 20 30 40
10u
1m
1n
1u
100u
10m
100n
10n
0.1 0.2 0.4 0.70 0.5
0.3
1000
0.001
10
100
0.6
1
0.1
0.01
Page 2
QW-A1023
REV:A
Capacitance between terminals (PF)
Reverse voltage (V)
Forward current (mA )
Forward voltage (V)
Fig. 1 - Forward characteristics
Reverse voltage (V)
Fig. 2 - Reverse characteristics
O
Ambient temperature ( C)
Fig.4 - Current derating curve
Fig.3 - Capacitance between
terminals characteristics
f = 1 MHz
Ta = 25 C
Reverse current ( A )
Average forward current(%)
O
-25C
O
25C
O
75 C
O
125 C
O
25 C
O
75 C
O
125 C
O
-25 C
SMD Schottky Barrier Diode
