NP3100SDMCT3G - ON Semiconductor

August, 2009 − Rev. 0

1Publication Order Number:

NP3100SD/D

NP-SDMC Series

High Current TSPD

The NP−SDMC series of High Current Thyristor Surge Protection

Devices (TSPD) protect sensitive electronic equipment from transient

overvoltage conditions. The high current withstand of these devices

offer protection in extreme environments and provide a solution for

GR−1089 balanced “Y” configurations.

The NP−SDMC Series helps designers to comply with the various

regulatory standards and recommendations including:

GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,

TIA−968−A, FCC Part 68, EN 60950, UL 1950.

Features

•Low Leakage (Transparent)

•High Surge Current Capabilities

•Precise Turn on Voltages

•These are Pb−Free Devices

Typical Applications

•Central Office

•Rugged Modems

•Bottom Element in “Y” Configurations

ELECTRICAL CHARACTERISTICS

Device

VDRM V(BO)

CO, 2 V,

1 MHz

CO, 50 V,

1 MHz

V V pF (Max) pF (Max)

NP0720SDMCT3G 65 88 65 30

NP1300SDMCT3G 120 160 65 30

NP1500SDMCT3G 140 180 65 30

NP1800SDMCT3G 170 220 65 30

NP3100SDMCT3G 275 350 65 30

G in part number indicates RoHS compliance

Other protection voltages are available upon request

Symmetrical Protection − Values the same in both negative and positive excursions

(See V−I Curve on page 3)

HIGH CURRENT (200A)

BIDIRECTIONAL SURFACE

MOUNT THYRISTOR

SMB

JEDEC DO−214AA

CASE 403C

A = Assembly Location

Y = Year

WW = Work Week

xxx = Specific Device Code

(NPxxx0SDMC)

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

AYWW

xxxDMG

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Device Package Shipping†

ORDERING INFORMATION

NPxxxxSDMCT3G SMB

(Pb−Free)

2500 Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NP−SDMC Series

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MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Rating Value Unit

VDRM Repetitive peak off−state voltage: Rated maximum

(peak) continuous voltage that may be applied in the

off−state conditions including all dc and repetitive

alternating voltage components.

NP0720SDMCT3G $65 V

NP1300SDMCT3G $120

NP1500SDMCT3G $140

NP1800SDMCT3G $170

NP3100SDMCT3G $275

IPPS Nonrepetitive peak pulse current: Rated maximum

value of peak impulse pulse current that may be

applied.

2x10 ms, GR−1089−CORE 1000 A

10x1000 ms, GR−1089−CORE 200

ITSM Non−repetitive peak on−state current: Rated

maximum (peak) value of ac power frequency

on−state surge current which may be applied for a

specified time or number of ac cycles.

0.0167s, 50/60 Hz, full sine wave 60 A

0.1s, 50/60 Hz, full sine wave 30

1000s, 50/60 Hz, full sine wave 2.2

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)

Symbol Rating Min Typ Max Unit

V(BO) Breakover voltage: The maximum voltage across the device in or at the

breakdown region.

VDC = 1000 V, dv/dt = 100 V/ms

NP0720SDMCT3G $88 V

NP1300SDMCT3G $160

NP1500SDMCT3G $180

NP1800SDMCT3G $220

NP3100SDMCT3G $350

I(BO) Breakover Current: The instantaneous current flowing at the breakover voltage. 800 mA

IHHolding Current: The minimum current required to maintain the device in the on−state. 150 mA

IDRM Off−state Current: The dc value of current that results from the applica-

tion of the off−state voltage

VD = 50 V 2mA

VD = VDRM 5

VTOn−state Voltage: The voltage across the device in the on−state condition.

IT = 2.2 A (pk), PW = 300 ms, DC = 2%

4 V

dv/dt Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that

will not cause switching from the off−state to the on−state.

Linear Ramp between 0.1 VDRM and 0.9 VDRM

±5kV/ms

di/dt Critical rate of rise of on−state current: rated value of the rate of rise of current which the device

can withstand without damage.

±500 A/ms

COOff−state Capacitance

f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc

65 pF

THERMAL CHARACTERISTICS

Symbol Rating Value Unit

TSTG Storage Temperature Range −65 to +150 °C

TJOperating Temperature Range −40 to +150 °C

R0JA Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”

Fan out in a 3x3 inch pattern, 2 oz copper track.

90 °C/W

NP−SDMC Series

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ELECTRICAL PARAMETER/RATINGS DEFINITIONS

Symbol Parameter

VDRM Repetitive Peak Off−state Voltage

V(BO) Breakover Voltage

IDRM Off−state Current

I(BO) Breakover Current

IHHolding Current

VTOn−state Voltage

ITOn−state Current

ITSM Nonrepetitive Peak On−state Current

IPPS Nonrepetitive Peak Impulse Current

VDOff−state Voltage

IDOff−state Current

Figure 1. Voltage Current Characteristics of TSPD

IPPS

ITSM

−Voltage +Voltage

−I

I(BO)

IDRM

V(BO)

VDRM

Off−State Region

On−State Region

TIME (ms)

Ipp − PEAK PULSE CURRENT − %Ipp

100

tr = rise time to peak value

tf = decay time to half value

trtf

Peak

Value

Half Value

100

0.1 1 10 100 1000

Figure 2. Nonrepetitive On−State Current vs. Time

(ITSM)

Figure 3. Nonrepetitive On−State Impulse vs.

Waveform (IPPS)

CURRENT DURATION (s)

PEAK ON−STATE CURRENT

Detailed Operating Description

The TSPD or Thyristor Surge Protection Device are

specialized silicon based overvoltage protectors, used to

protect sensitive electronic circuits from damaging

overvoltage transient surges caused by induced lightning

and powercross conditions.

The TSPD protects by switching to a low on state voltage

when the specified protection voltage is exceeded. This is

known as a “crowbar” effect. When an overvoltage occurs,

the crowbar device changes from a high−impedance to a

low−impedance state. This low−impedance state then offers

a path to ground, shunting unwanted surges away from the

sensitive circuits.

This crowbar action defines the TSPD’s two states of

functionality: Open Circuit and Short Circuit.

Open Circuit – The TSPD must remain transparent during

normal circuit operation. The device looks like an open

across the two wire line.

Short Circuit – When a transient surge fault exceeds the

TSPD protection voltage threshold, the devices switches on,

and shorts the transient to ground, safely protecting the

circuit.

Figure 4. Normal and Fault Conditions

Protected

Equipment

−

V(OP)

I(OP)

TSPD

Normal Circuit Operation

Protected

Equipment

−

V(Fault)

I(Fault)

TSPD

Operation during a Fault

I(Fault)

STSPD looks like an open

SCircuit operates normally

SFault voltage greater than Vbo occurs

STSPD shorts fault to ground

SAfter short duration events the O/V

switches back to an open condition

SWorst case (Fail/Safe)

SO/V permanent short

SEquipment protected

NP−SDMC Series

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The electrical characteristics of the TSPD help the user to

define the protection threshold for the circuit. During the

open circuit condition the device must remain transparent;

this is defined by the IDRM. The IDRM should be as low as

possible. The typical value is less than 5 mA.

The circuit operating voltage and protection voltage must

be understood and considered during circuit design. The

V(BO) is the guaranteed maximum voltage that the protected

circuit will see, this is also known as the protection voltage.

The VDRM is the guaranteed maximum voltage that will

keep the TSPD in its normal open circuit state. The TSPD

V(BO) is typically a 20−30% higher than the VDRM. Based

on these characteristics it is critical to choose devices which

have a VDRM higher than the normal circuit operating

voltage, and a V(BO) which is less than the failure threshold

of the protected equipment circuit. A low on−state voltage

Vt allows the TSPD to conduct large amounts of surge

current (500 A) in a small package size.

Once a transient surge has passed and the operating

voltage and currents have dropped to their normal level the

TSPD changes back to its open circuit state.

Normal System

Operating Voltage

Equipment Failure Threshold

Time

Transient Surge

TSPD Protection

(short)

Figure 5. Protection During a Transient Surge

TSPD Transparent

(open)

TSPD Transparent

(open)

Volts

TSPD Protection Voltage

Upper Limit

TSPD’s are useful in helping designers meet safety and

regulatory standards in Telecom equipment including

GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC

Part 68, UL1950, and EN 60950.

ON Semiconductor offers a full range of these products in

the NP series product line.

DEVICE SELECTION

When selecting a TSPD use the following key selection

parameters.

Off−State Voltage VDRM

Choose a TSPD that has an Off−State Voltage greater than

the normal system operating voltage. The protector should

not operate under these conditions:

Example:

Vbat = 48 Vmax

Vring = 150 Vrms = 150*1.414 = 212 V peak

VDRM should be greater than the peak value of these two

components:

VDRM > 212 + 48 = 260 VDRM

Breakover Voltage V(BO)

Verify that the TSPD Breakover Voltage is a value less

than the peak voltage rating of the circuit it is protecting.

Example: Relay breakdown voltage, SLIC maximum

voltage, or coupling capacitor maximum rated voltage.

Peak Pulse Current Ipps

Choose a Peak Pulse current value which will exceed the

anticipated surge currents in testing.

Hold Current (IH)

The Hold Current must be greater than the maximum

system generated current. If it is not then the TSPD will

remain in a shorted condition, even after a transient event

has passed.

NP−SDMC Series

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TYPICAL APPLICATION

Figure 6.

100A

200A

Tip

NP3100SCMCNP3100SCMC

Ring

Surge

NP3100SDMC

Waveforms

100A

Testing:

Tip − Ground

Ring − Ground

Tip and Ring to Ground Simultaneously

•200 A 10 x 1000 ms Needed for GR−1089

•Bottom Element in “Y” Configuration

NP−SDMC Series

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN

DIMENSION P.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.160 0.180 4.06 4.57

B0.130 0.150 3.30 3.81

C0.075 0.095 1.90 2.41

D0.077 0.083 1.96 2.11

H0.0020 0.0060 0.051 0.152

J0.006 0.012 0.15 0.30

K0.030 0.050 0.76 1.27

P0.020 REF 0.51 REF

S0.205 0.220 5.21 5.59

SMB

CASE 403C−01

ISSUE A

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ǒmm

inchesǓ

SCALE 8:1

2.743

0.108

2.159

0.085

2.261

0.089

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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NP3100SD/D

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