November 2010 Preliminary Datasheet
http://www.genesicsemi.com Page 1 of 3
GA080TH65
Silicon Carbide Thyristor = 6500 V
= 80 A
=
Features Package
Applications
Maximum Ratings
Parameter Symbol Conditions Values Unit
Repetitive peak forward voltage 6500 V
Repetitive peak reverse voltage 50 V
Maximum average on-state current 80 A
RMS on-state current 139 A
Non-repetitive peak on-state current tbd A
Power dissipation 1563 W
Operating and storage temperature -55 to 150 °C
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Maximum peak on state voltage -3.70 V
-3.45
Anode-cathode threshold voltage -3.0(-2.7) V
Anode-cathode slope resistance 6.0(6.3) mΩ
Leakage current 15 µA
50
Gate trigger current -100 mA
Holding current tbd mA
Rise time 190 ns
Delay time 50 ns
Reverse recovery charge 4.2
Recovered charge, 50% chord 2.3
Reverse recovery current 20 A
Circuit commutated turn-off time 10.1
Thermal Characteristics
Thermal resistance, junction - case 0.08 °C/W
Mechanical Properties
Mounting torque for base Heat sink surface must be optically flat 1.5 Nm
Mounting torque for top 1.3 Nm
Weight 30 g
VFBM
IT(AVM)
Qrr 4.2 µC
• 6500 V Asymmetric SiC NPNP Thyristor
• 150 °C operating temperature
• Robust compact fully soldered package
• SOT-227 (ISOTOP) base plate form factor
• Fast turn on characteristics
• Lowest in class Qr
r
/IT
(
AVM
)
• Grid Tied Solar Inverters
• Wind Power Inverters
• HVDC Power Conversion
• Utility Scale Power Conversion
• Trigger Circuits/Ignition Circuits
VFBM Tj = 25 °C
VRBM Tj = 25 °C
IT(AVM) TC ≤ 125 °C
IT(RMS) TC ≤ 125 °C
IT,max TC= 25 °C, tp = 2 us, D = 0.1
Ptot TC= 25 °C
Tj, Tstg
VKA(ON)
IK = -80 A, Tj = 25 °C
IK = -80 A, Tj = 150 °C
VKA(TO) Tj = 25 °C (150 °C)
RAK Tj = 25 °C (150 °C), IK = -80 A
IL
VKA = -6500 V, VGA = 0 V, Tj = 25 °C
VKA = -6500 V, VGA = 0 V, Tj = 150 °C
IG
T
Tj = 25 °C, tP = 10 µs
IHTj = 25 °C
tRIG = -3 A, VKA = -2200 V
tD IK = -80 A, Tj = 25 °C
Qrr µC
Qra dI/dt = 430 A/us, IK = -70 A, VKA = 20 V µC
Irm dV/dt(re-app) = -460 V/us, Tj = 25 °C
tqµs
RthJC
Mb
Mt
Wt
1. Considering worst case Zth conditions
http://www.genesicsemi.com/index.php/sic-products/thyristors
November 2010 Preliminary Datasheet
http://www.genesicsemi.com Page 2 of 3
GA080TH65
Figure 1: Typical On State Characteristics Figure 2: Typical Forward Blocking Characteristics
Figure 4: Typical Current Rating versus Pulse Duration Curves
Figure 3: Typical Current Derating Curves (D = tP/T, tP = 400 µs1)
at TC= 120 OC
Figure 5: Typical Turn On Characteristics at 25 °C Figure 6: Typical Turn Off Characteristics at 25 °C
November 2010 Preliminary Datasheet
http://www.genesicsemi.com Page 3 of 3
GA080TH65
Figure 7: Typical Reverse Recovery Characteristics at 25 °C Figure 8: Typical Transient Thermal Impedance
Revision History
Date Revision Comments Supersedes
2010/11/13 1 First generation release
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
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and/or property damage.
