IXGP12N120A3 - Zilog - Product.Network

IXGA12N120A3

IXGP12N120A3

IXGH12N120A3

VCES = 1200V

IC90 = 12A

VCE(sat) ≤ ≤

≤ ≤

≤

3.0V

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 1200 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ 1200 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C 22 A

IC90 TC= 90°C 12 A

ICM TC= 25°C, 1ms 60 A

SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 24 A

(RBSOA) Clamped Inductive Load VCE ≤ 0.8 • VCES

PCTC= 25°C 100 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C

FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

MdMounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100212B(11/10)

High Surge Current

Ultra-Low Vsat PT IGBTs for

up to 3kHz Switching

GenX3TM 1200V

IGBTs

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXGH)

G

S

DD (Tab)

TO-263 AA (IXGA)

G

S

D (Tab)

GDS

TO-220AB (IXGP)

D (Tab)

Features

zOptimized for Low Conduction Losses

zInternational Standard Packages

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

zInrush Current Protection Circuits

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified Min. Typ. Max.

BVCES IC= 250μA, VGE = 0V 1200 V

VGE(th) IC= 250μA, VCE = VGE 2.5 5.0 V

ICES VCE = VCES, VGE = 0V 10 μA

TJ = 125°C 275 μA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC= IC90, VGE = 15V, Note 1 2.40 3.0 V

TJ = 125°C 2.75 V

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA12N120A3 IXGP12N120A3

IXGH12N120A3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = IC90, VCE = 10V, Note 1 5.2 8.8 S

IC(on) VGE = 10V, VCE = 10V, Note 1 44 A

Cies 550 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 30 pF

Cres 8 pF

Qg 20.4 nC

Qge IC = IC90, VGE = 15V, VCE = 600V 3.1 nC

Qgc 8.5 nC

td(on) 35 ns

tr 140 ns

td(off) 62 ns

tf 1035 ns

td(on) 35 ns

tr 167 ns

td(off) 70 ns

tf 1475 ns

RthJC 1.25 °C/W

RthCS TO-247 0.21 °C/W

TO-220 0.50 °C/W

Resistive Switching Times, TJ = 25°C

IC = IC90, VGE = 15V

VCE = 960V, RG = 10Ω

Resistive Switching Times, TJ = 125°C

IC = IC90, VGE = 15V

VCE = 960V, RG = 10Ω

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitted

TO-263 Outline

Pins: 1 - Gate 2 - Drain

TO-220 Outline

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

1 = Gate 2 = Collector

3 = Emitter

Fi g . 1. Ou tpu t C har acteri sti cs @ T

J

= 25ºC

0

4

8

12

16

20

24

0.00.51.01.52.02.53.03.54.04.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

10V

9V

6V

5V

7V

8V

Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T

J

= 25ºC

0

10

20

30

40

50

60

70

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

5V

8V

10V

11V

9V

13V

6V

Fig . 3. Ou tpu t C har acteristics @ T

J

= 125ºC

0

4

8

12

16

20

24

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

10V

9V

7V

5V

8V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50-250 255075100125150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V I

C

= 24A

I

C

= 12A

I

C

= 6A

Fi g . 5. C o l l ec to r -to -Emitter Vo ltag e

vs. Gate- to -Emitter Vo l t ag e

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 24A

T

J

= 25ºC

6A

12A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

3456789

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGA12N120A3 IXGP12N120A3

IXGH12N120A3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA12N120A3 IXGP12N120A3

IXGH12N120A3

Fi g . 1 1. Maxi mu m Tr an sien t Th er mal I mpeda n ce

0.01

0.10

1.00

10.00

0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Second

Z

(th)JC

- ºC / W

Fi g . 11. Maximu m Tr an si ent Th er ma l I mped an ce

aaaaaa

3.00

Fig. 7. Transconductance

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 8. Gate C har g e

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10121416182022

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 600V

I

C

= 12A

I

G

= 10mA

Fi g . 9 . R ever se-Bi as Safe Op e r ati n g Area

0

4

8

12

16

20

24

28

200 300 400 500 600 700 800 900 1000 1100 1200

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 10Ω

dv / dt < 10V / ns

Fi g . 10. C ap acitan ce

1

10

100

1,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

Fig . 13. R esistive Turn -o n R ise Time

vs. C o l l e cto r C u r r en t

100

120

140

160

180

200

220

240

6 8 10 12 14 16 18 20 22 24

I

C

- Amperes

t

r

- Nanoseconds

R

G

= 10Ω , V

GE

= 15V

V

CE

= 960V

T

J

= 125ºC

T

J

= 25ºC

Fig . 15. Resi stive Tu rn -o ff Switchin g Times

vs. Junction Temperature

800

900

1000

1100

1200

1300

1400

1500

1600

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

20

30

40

50

60

70

80

90

100

t

d

(

off

)

- Nanoseconds

t

f

td(off)

- - - -

R

G

= 10Ω, V

GE

= 15V

V

CE

= 960V

I

C

= 12A

I

C

= 24A

Fig . 1 6. R esistive Tur n - o ff Switch in g Ti mes

vs. C o l l e cto r C u r r en t

600

800

1000

1200

1400

1600

1800

2000

2200

6 8 10 12 14 16 18 20 22 24

I

C

- Amperes

t

f

- Nanoseconds

30

40

50

60

70

80

90

100

110

t

d

(

off

)

- Nanoseconds

t

f

td(off

)

- - - -

R

G

= 10Ω, V

GE

= 15V

V

CE

= 960V

T

J

= 125ºC

T

J

= 25ºC

Fig . 12. R esistive Tu rn - o n Ri se Ti me

vs. Ju ncti o n Temper atu r e

100

120

140

160

180

200

220

240

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 10Ω , V

GE

= 15V

V

CE

= 960V

I

C

= 12A

I

C

= 24A

Fig . 1 7. R esisti v e Turn - o f f Switch in g Ti mes

vs. Gate R e sistan c e

1100

1200

1300

1400

1500

1600

1700

1800

0 30 60 90 120 150 180 210 240 270 300

R

G

- Ohms

t

f

- Nanoseconds

0

100

200

300

400

500

600

700

t

d

(

off

)

- Nanoseconds

t

f

td(off)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 960V

I

C

= 24A

I

C

= 12A

Fig . 14. R esistive Turn -o n Switch in g Ti mes

vs. Gate Resistance

140

160

180

200

220

240

260

0 30 60 90 120 150 180 210 240 270 300

R

G

- Ohms

t

r

- Nanoseconds

20

40

60

80

100

120

140

t

d(on)

- Nanoseconds

t

r

td(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 960V

I

C

= 24A

I

C

= 12A

IXGA12N120A3 IXGP12N120A3

IXGH12N120A3