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V40100C-E3, VF40100C-E3, VI40100C-E3

www.vishay.com Vishay General Semiconductor

Revision: 10-May-16 1Document Number: 89042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.38 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum



PRIMARY CHARACTERISTICS

IF(AV) 2 x 20 A

VRRM 100 V

IFSM 250 A

VF at IF = 20 A 0.61 V

TJ max. 150 °C

Package TO-220AB, ITO-220AB, TO-262AA

Diode variations Dual common cathode

TO-220AB

TO-262AA

PIN 1 PIN 2

PIN 3 K

PIN 1 PIN 2

PIN 3

PIN 1 PIN 2

CASE

PIN 3

C00104FVC00104V

VI40100C

TMBS

ITO-220AB

123

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL V40100C VF40100C VI40100C UNIT

Maximum repetitive peak reverse voltage VRRM 100 V

Maximum average forward rectified current (fig. 1) per device IF(AV)

40 A

per diode 20

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode IFSM 250 A

Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH 

per diode EAS 230 mJ

Peak repetitive reverse current at tp = 2 μs, 1 kHz, 

TJ = 38 °C ± 2 °C per diode IRRM 1.0 A

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Operating junction and storage temperature range TJ, TSTG -40 to +150 °C

V40100C-E3, VF40100C-E3, VI40100C-E3

www.vishay.com Vishay General Semiconductor

Revision: 10-May-16 2Document Number: 89042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Breakdown voltage (2)

IR = 1.0 mA

TA = 25 °C VBR

100

(minimum) -

IR = 10 mA 105

(minimum) -

Instantaneous forward voltage per diode (1)

IF = 5 A

TA = 25 °C

0.47 -

IF = 10 A 0.54 -

IF = 20 A 0.67 0.73

IF = 5 A

TA = 125 °C

0.38 -

IF = 10 A 0.45 -

IF = 20 A 0.61 0.67

Reverse current at rated VR per diode (2)

VR = 70 V TA = 25 °C

9-μA

TA = 125 °C 10 - mA

VR = 100 V TA = 25 °C - 1000 μA

TA = 125 °C 21 45 mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL V40100C VF40100C VI40100C UNIT

Typical thermal resistance per diode RJC 2.0 4.0 2.0 °C/W

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

TO-220AB V40100C-E3/4W 1.85 4W 50/tube Tube

ITO-220AB VF40100C-E3/4W 1.75 4W 50/tube Tube

TO-262AA VI40100C-M3/4W 1.46 4W 50/tube Tube

Case Temperature (°C)

Average Forward Current (A)

0 25 50 75 100 125 150 175

VF40100C

VI40100C

V40100C

0 5 10 15 20 25

Average Forward Current (A)

Average Power Loss (W)

D = 0.1

D = 0.2

D = 0.3

D = 0.5 D = 0.8

D = 1.0

D = t

/T t

V40100C-E3, VF40100C-E3, VI40100C-E3

www.vishay.com Vishay General Semiconductor

Revision: 10-May-16 3Document Number: 89042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Fig. 7 - Typical Transient Thermal Impedance Per Diode

Instantaneous Forward Voltage (V)

0 0.2 0.4 0.6 0.8 1

100

0.1

= 25 °C

= 125 °C

= 150 °C

= 100 °C

Instantaneous Forward Current (A)

10 20 30 40 50 60 70 80 90 100

0.1

0.01

0.001

100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (mA)

= 150 °C

= 25 °C

= 100 °C

= 125 °C

110

100

0.1

Reverse Voltage (V)

Junction Capacitance (pF)

10 000

1000

100

0.1

0.01 0.1 1 10 100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

Junction to Case

V(I)40100C

100

0.1

0.01 0.1 1 10 100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

Junction to Case

VF40100C

V40100C-E3, VF40100C-E3, VI40100C-E3

www.vishay.com Vishay General Semiconductor

Revision: 10-May-16 4Document Number: 89042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

ITO-220AB

0.076 (1.93) REF.

45° REF.

321

0.404 (10.26)

0.384 (9.75)

0.076 (1.93) REF.

0.600 (15.24)

0.580 (14.73)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.057 (1.45)

0.045 (1.14)

0.191 (4.85)

0.171 (4.35)

0.671 (17.04)

0.651 (16.54)

0.035 (0.89)

0.025 (0.64)

0.205 (5.21)

0.195 (4.95)

0.025 (0.64)

0.015 (0.38)

0.105 (2.67)

0.095 (2.41)

0.028 (0.71)

0.020 (0.51)

0.110 (2.79)

0.100 (2.54)

7° REF.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

0.110 (2.79)

0.100 (2.54)

0.190 (4.83)

0.170 (4.32)

7° REF.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.350 (8.89)

0.330 (8.38)

TO-220AB

0.113 (2.87)

0.103 (2.62)

0.415 (10.54)

0.380 (9.65)

0.635 (16.13)

0.625 (15.87)

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

0.104 (2.65)

0.096 (2.45) 0.205 (5.20)

0.195 (4.95)

0.035 (0.90)

0.028 (0.70)

0.161 (4.08)

0.139 (3.53)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.350 (8.89)

0.330 (8.38)

1.148 (29.16)

1.118 (28.40)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

0.603 (15.32)

0.573 (14.55)

TO-262AA

HEATSINK

PIN 2

PIN 1

PIN 3

0.401 (10.19)

0.381 (9.68)

0.185 (4.70)

0.175 (4.44)

0.055 (1.40)

0.045 (1.14)

0.110 (2.79)

0.100 (2.54)

0.350 (8.89)

0.330 (8.38)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.35)

123

0.055 (1.40)

0.047 (1.19)

0.510 (12.95)

0.470 (11.94)

0.411 (10.45) MAX.

0.250 (6.35) MIN.

30° (TYP.)

(REF.)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.104 (2.65)

0.096 (2.45)

0.057 (1.45)

0.045 (1.14)

0.160 (4.06)

0.140 (3.56)

0.950 (24.13)

0.920 (23.37)

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Revision: 13-Jun-16 1Document Number: 91000

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

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