FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. -6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V, RDS(ON) = 0.045 @ VGS = -4.5 V. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. RDS(ON). SuperSOTTM-6 SOT-23 SuperSOTTM-8 Low gate charge (14.5nC typical). High performance trench technology for extremely low High power and current handling capability. SO-8 SOIC-16 SOT-223 D2 D2 D1 D1 S FD 75 69 S2 SO-8 pin 1 S1 Absolute Maximum Ratings G2 G1 5 4 6 3 7 2 8 1 TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed -20 PD Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) Units -30 V 20 V -6 A (Note 1a) 1.6 (Note 1b) 1 (Note 1c) TJ,TSTG Ratings Operating and Storage Temperature Range W 0.9 -55 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W (c) 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDS6975/D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = -250 A -30 BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = -250 A, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V o V mV/oC -21 TJ = 55C -1 A -10 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25 oC -1 RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, I D = -6 A VGS = -4.5 V, I D = -5 A On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -10 V, I D = -6 A -3 V mV/oC 4 TJ =125C ID(ON) -1.7 0.025 0.032 0.033 0.051 0.034 0.045 -20 A 16 S 1540 pF 400 pF 170 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS = -15 V, I D = -1 A 13 24 ns tr Turn - On Rise Time VGEN = -10 V, RGEN = 6 22 35 ns tD(off) Turn - Off Delay Time 47 75 ns tf Turn - Off Fall Time 18 30 ns Qg Total Gate Charge VDS = -10 V, I D = -6 A, 14.5 20 nC Qgs Gate-Source Charge VGS = -5 V Qgd Gate-Drain Charge 4 nC 5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.73 -1.3 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. www.onsemi.com 2 c. 135OC/W on a 0.003 in2 pad of 2oz copper. Typical Electrical Characteristics 2.5 VGS = -10V -4.5V -6.0V R DS(ON), NORMALIZED 24 -3.5V 18 12 -3.0V 6 DRAIN-SOURCE ON-RESISTANCE - I D, DRAIN-SOURCE CURRENT (A) 30 V GS = -3.5V 2 -4.0 V -4.5 V 1.5 -5.5 V -7.0 V -10V 1 0.5 0 0 1 2 3 4 0 5 6 12 Figure 1. On-Region Characteristics. R DS(ON), ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 0.8 -25 0 25 50 75 100 125 I D = -3A 0.08 0.06 0.04 TA = 125 C 0.02 25 C 0 150 2 4 TJ , JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation Temperature. with - I S , REVERSE DRAIN CURRENT (A) - I D, DRAIN CURRENT (A) 25 C 24 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. TJ = -55 C V DS = -5.0V 6 - VGS , GATE TO SOURCE VOLTAGE (V) 30 125 C 18 12 6 0 1.5 30 0.1 I D = -6A V GS = -10V 1.2 0.6 -50 24 Figure 2. On-Resistance Variation with Dain Current and Gate Voltage. 1.6 1.4 18 - I D , DRAIN CURRENT (A) - VDS , DRAIN-SOURCE VOLTAGE (V) 30 VGS = 0V 10 TJ = 125 C 1 25 C -55 C 0.1 0.01 0.001 2 2.5 3 3.5 4 4.5 0 0.3 0.6 0.9 1.2 - VSD , BODY DIODE FORWARD VOLTAGE (V) - VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.5 Typical Electrical Characteristics (continued) 3000 ID = -6A V DS = -5V 2000 8 -10V CAPACITANCE (pF) - V GS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 4 C iss 1000 Coss 500 200 2 100 0.1 0 0 6 12 18 24 30 0.2 Figure 7. Gate Charge Characteristics. 10 T 1m 10m 3 10 0m 0u VGS = -10V SINGLE PULSE RJA =135C/W TA = 25C 0.05 0.01 0.1 0.3 5 10 20 s SINGLE PULSE RJA =135C/W TA = 25C 25 s s 20 15 10 5 1 2 5 10 30 0 0.01 50 0.1 - VDS , DRAIN-SOURCE VOLTAGE (V) 0.5 10 50 100 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 0.5 0.2 0.1 0.05 0.02 0.01 D = 0.5 0.2 R JA (t) = r(t) * R JA R JA = 135C/W 0.1 0.05 0.02 P(pk) 0.01 t1 Single Pulse 0.005 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 30 30 10 s DC 0.5 2 s 1s r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE - I D , DRAIN CURRENT (A) 10 1 Figure 8. Capacitance Characteristics. POWER (W) I LIM N) S(O D R 0.5 - VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 30 Crss f = 1 MHz VGS = 0 V 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. 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