For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
1
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
General Description
Features
Functional Diagram
The HMC716LP3E is a GaAs pHEMT MMIC
Low Noise Ampli er that is ideal for xed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The ampli er
has been optimized to provide 1 dB noise gure,
18 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC716LP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Noise Figure: 1 dB
Gain: 18 dB
Output IP3: +33 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
Typical Applications
The HMC716LP3E is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Electrical Speci cations
TA = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [1]
Parameter Vdd = +3V Vdd = +5V Units
Min. Typ. Max. Min. Typ. Max.
Frequency Range 3.1 - 3.9 3.1 - 3.9 MHz
Gain 13 17 15.5 18 dB
Gain Variation Over Temperature 0.01 0.01 dB/ °C
Noise Figure 1 1.3 1 1.3 dB
Input Return Loss 25 30 dB
Output Return Loss 13 16 dB
Output Power for 1 dB Compression (P1dB) 12 15 16 19 dBm
Saturated Output Power (Psat) 16.5 20.5 dBm
Output Third Order Intercept (IP3) 26 33 dBm
Supply Current (Idd) 41 55 65 90 mA
[1] Rbias resistor sets current, see application circuit herein
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
2
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Input Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss [1] [2]
-40
-30
-20
-10
0
10
20
30
1 2 3 4 5 6 7 8
5V
3V
FREQUENCY (GHz)
RESPONSE (dB)
S11
S21
S22
-40
-30
-20
-10
0
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
-25
-20
-15
-10
-5
0
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
[1] Vdd = 5V, Rbias = 820 Ω [2] Vdd = 3V, Rbias = 47k Ω
Gain vs. Temperature [2]
12
14
16
18
20
22
24
26
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
Gain vs. Temperature [1]
12
14
16
18
20
22
24
26
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
Reverse Isolation vs. Temperature [1]
-45
-40
-35
-30
-25
-20
-15
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
ISOLATION (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
3
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
P1dB vs. Temperature [1] [2]
Psat vs. Temperature [1] [2]
9
12
15
18
21
24
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
Psat (dBm)
Vdd=5V
Vdd=3V
9
12
15
18
21
24
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB (dBm)
Vdd=5V
Vdd=3V
Output IP3 and Supply Current vs.
Supply Voltage @ 3300 MHz [3]
[1] Vdd = 5V, Rbias = 820 Ω [2] Vdd = 3V, Rbias = 47kΩ
[3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V
[4] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature [1] [2]
21
25
29
33
37
41
45
3 3.2 3.4 3.6 3.8 4
+25C
+85C
-40C
FREQUENCY (GHz)
IP3 (dBm)
Vdd=5V
Vdd=3V
24
26
28
30
32
34
36
5
20
35
50
65
80
95
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
Idd
IP3
Noise Figure vs. Temperature [1] [2] [4]
0
0.3
0.6
0.9
1.2
1.5
1.8
3 3.2 3.4 3.6 3.8 4
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE FIGURE (dB)
+85C
+25C
-40C
Output IP3 and Supply Current vs.
Supply Voltage @ 3800 MHz [3]
24
26
28
30
32
34
36
5
20
35
50
65
80
95
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
Idd
IP3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
4
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Power Compression @ 3300 MHz [1]
-10
-4
2
8
14
20
26
32
-20 -15 -10 -5 0 5
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 3800 MHz [2]
Power Compression @ 3300 MHz [1]
-5
0
5
10
15
20
25
30
35
40
-20 -15 -10 -5 0 5
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
-5
0
5
10
15
20
25
30
35
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 3300 MHz [2]
[1] Vdd = 5V, Rbias = 820 Ω [2] Vdd = 3V, Rbias = 47k Ω [3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k for Vdd 3V
Gain, Power & Noise Figure
vs. Supply Voltage @ 3300 MHz [3]
12
14
16
18
20
22
24
0.8
0.9
1
1.1
1.2
1.3
1.4
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain
NF
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
VOLTAGE SUPPLY (V)
Gain, Power & Noise Figure
vs. Supply Voltage @ 3800 MHz [3]
11
13
15
17
19
21
23
0.8
0.9
1
1.1
1.2
1.3
1.4
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain
NF
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
VOLTAGE SUPPLY (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
5
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Output IP3 vs. Rbias @ 3800 MHz
20
24
28
32
36
40
100 1000 10000 100000
Vdd=3V
Vdd=5V
Rbias (Ohms)
IP3 (dBm)
Gain, Noise Figure & Rbias @ 3800 MHz
Output IP3 vs. Rbias @ 3300 MHz
20
24
28
32
36
40
100 1000 10000 100000
Vdd=3V
Vdd=5V
Rbias (Ohms)
IP3 (dBm)
Gain, Noise Figure & Rbias @ 3300 MHz
8
10
12
14
16
18
20
0.95
1
1.05
1.1
1.15
1.2
1.25
100 1000 10000 100000
Vdd=3V
Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias (Ohms)
10
12
14
16
18
20
22
1
1.05
1.1
1.15
1.2
1.25
1.3
100 1000 10000 100000
Vdd=3V
Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias (Ohms)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
6
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5V
RF Input Power (RFIN)
(Vdd = +5 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 11.1 mW/°C above 85 °C) 0.72 W
Thermal Resistance
(channel to ground paddle) 90 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
2.7 31
3.0 41
3.3 51
4.5 51
5.0 65
5.5 80
Note: Ampli er will operate over full voltage ranges shown above.
Typical Supply Current vs. Supply Voltage
(Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V)
Vdd (V) Rbias (Ω) Idd (mA)
Min Max Recommended
3V 2k [1] Open Circuit
2.2k 20
5.6k 30
47k 41
5V 0 Open Circuit
270 48
820 65
2.2k 81
[1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
7
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC716LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 716
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
8
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Pin Number Function Description Interface Schematic
1, 3 - 7, 9, 10,
12 - 14, 16 N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
2 RFIN This pin is DC coupled. An off chip
DC blocking capacitor is required.
11 RFOUT This pin is AC coupled and matched to 50 Ohms.
8 RES This pin is used to set the DC current of the ampli er by
selection of external bias resistor. See application circuit.
15 Vdd Power supply voltage. Bypass capacitors are required.
See application circuit.
GND Ground paddle must be connected to RF/DC ground.
Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
9
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIERS - SMT
10
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Evaluation PCB
Item Description
J1, J2 PCB Mount SMA Connector
J3, J4 DC Pin
C1 10 nF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0603 Pkg.
C3 0.47 µF Capacitor, 0603 Pkg.
C4 100 pF Capacitor, 0402 Pkg.
R1 820Ω Resistor, 0402 Pkg.
R2 0 Ohm Resistor, 0402 Pkg.
U1 HMC716LP3E Ampli er
PCB [2] 122490 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
List of Materials for Evaluation PCB 122540 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.