BAS16TW
MMBD4148TW
200mW Switching
Diode
Features
x Power dissipation: 200mW (Tamb=25ć)
xForwardcurrent:150mA
x Operating Temperature: -55к to +150к
x Storage Temperature: -55к to +150к
Electrical Characteristics @ 25qC Unless Otherwise Specified
Reverse Voltage VR 75V
IR=100A
Peak Forward
Current
IF 150mA
Maximum
Instantaneous
Forward Voltage
VF
0.715V
0.855
1.0V
1.25V
IFM =1mA;
IFM =10mA;
IFM =50mA;
IFM =150mA;
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR1.0PA
0.025PA
VR=75Volts
VR=20Volts
Diode Capacitance CD 2pF Measured at
1.0MHz, VR=0V
Reverse Recovery
Time
Trr 4ns IF=IR=10mA,
RL =100 OHM
Irr=0.1IR
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .006 .014 0.15 0.35
B .045 .053 1.15 1.35
C .085 .096 2.15 2.45
D .026 0.65Nominal
G .047 .055 1.20 1.40
H .071 .087 1.80 2.20
J --- .004 --- 0.10
K .035 .043 0.90 1.10
L .010 .018 0.26 0.46
M .003 .006 0.08 0.15
J
M
A
C
B
G
H
K
DL
SOT-363
Marking: KA2
Maximum Ratings
6 4
13
A
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: A 2011/01/01
TM
Micro Commercial Components
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Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
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Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information :
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