www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83650
2Rev. 1.8, 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILQ32
Vishay Semiconductors Optocoupler, Photodarlington Output,
High Gain (Quad Channel)
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Peak reverse voltage VR3V
Forward continuous current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 25°C 1.33 mW/°C
OUTPUT
Collector emitter breakdown
voltage BVCEO 30 V
Collector (load) current IC125 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25°C 2mW/°C
COUPLER
Isolation test voltage
between emitter and detector t = 1 s VISO 5300 VRMS
Creepage distance 7mm
Clearance distance 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1 CTI 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Total dissipation ILQ32 Ptot 500 mW
Derate linearly from 25 °C ILQ32 6.67 mW/°C
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.25 1.5 V
Reverse current VR = 3 V IR0.1 100 μA
Capacitance VR = 0 V CO25 pF
OUTPUT
Collector emitter breakdown
voltage IC = 100 A, IF = 0 A BVCEO 30 V
Breakdown voltage emitter
collector IE = 100 μA BCECO 510 V
Collector emitter leakage current VCE = 10 V, IF = 0 A ICEO 1 100 nA
COUPLER
Collector emitter IC = 2 mA, IF = 8 mA VCEsat 1V
Capacitance (input to output) CIO 0.5 pF