5-23
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
VDS = 2 V, IDS␣ =␣ 20 mA
• High Associated Gain:
13.0 dB Typical at 4 GHz
• High Output Power:
20.0 dBm Typical P1 dB at 4 GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and Reel Packaging
Option Available [1]
ATF-10136
36 micro-X Package
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NFOOptimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.4
f = 4.0 GHz dB 0.5 0.6
f = 6.0 GHz dB 0.8
GAGain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 11.0
P1 dB Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
VDS = 4 V, IDS = 70 mA
G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0
gmTransconductance: VDS = 2 V, VGS = 0 V mmho 70 140
IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180
VPPinchoff Voltage: VDS = 2 V, IDS = 1 mA V -4.0 -1.3 -0.5
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat-
ing in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
5965-8701E
5-24
ATF-10136 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VDS Drain-Source Voltage V +5
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -7
IDS Drain Current mA IDSS
PTPower Dissipation [2,3] mW 430
TCH Channel Temperature °C 175
TSTG Storage Temperature[4] °C -65 to +175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/°C for
TCASE > 25°C.
4. Storage above +150°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
ATF-10136 Typical Performance, T A = 25°C
Thermal Resistance: θjc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement: 1 µm Spot Size[5]
ATF-10136 Noise Parameters: VDS = 2 V, IDS = 25 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
0.5 0.35 0.93 12 0.80
1.0 0.4 0.85 24 0.70
2.0 0.4 0.70 47 0.46
4.0 0.5 0.39 126 0.36
6.0 0.8 0.36 -170 0.12
8.0 1.1 0.45 -100 0.38
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-10136-TR1 1000 7"
ATF-10136-STR 10 STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
FREQUENCY (GHz)
NFO (dB)
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
DS
.
V
DS
= 2V, f = 4.0 GHz.
NFO (dB)
02010 40 5030 60
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 25 mA.
FREQUENCY (GHz)
GAIN (dB)
2.0
1.5
1.0
0.5
0
18
15
12
9
6
GA (dB)
16
14
12
10
GA (dB)
2.0 6.04.0 8.0 10.0 12.0
1.5
1.0
0.5
0
GA
GA
NFO
NFO
|S21|2
MSG
MAG
0.5 1.0 2.0 4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2V, I
DS
= 25 mA, T
A
= 25°C.
5-25
Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA=25°C, VDS =2 V, I
DS␣ =␣ 25 mA
Freq. S11 S21 S12 S22
MHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .98 -18 14.5 5.32 163 -34.0 .020 78 .35 -9
1.0 .93 -33 14.3 5.19 147 -28.4 .038 67 .36 -19
2.0 .79 -66 13.3 4.64 113 -22.6 .074 59 .30 -31
3.0 .64 -94 12.2 4.07 87 -19.2 .110 44 .27 -42
4.0 .54 -120 11.1 3.60 61 -17.3 .137 31 .22 -49
5.0 .47 -155 10.1 3.20 37 -15.5 .167 13 .16 -54
6.0 .45 162 9.2 2.88 13 -14.3 .193 -2 .08 -17
7.0 .50 120 8.0 2.51 -10 -13.9 .203 -19 .16 45
8.0 .60 87 6.4 2.09 -32 -13.6 .210 -36 .32 48
9.0 .68 61 4.9 1.75 -51 -13.6 .209 -46 .44 38
10.0 .73 42 3.6 1.52 -66 -13.7 .207 -58 .51 34
11.0 .77 26 2.0 1.26 -82 -13.8 .205 -73 .54 27
12.0 .80 14 1.0 1.12 -97 -14.0 .200 -82 .54 15
36 micro-X Package Dimensions
13
4
2
SOURCE
SOURCE
DRAIN
GATE
2.15
(0.085) 2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57 ± 0.25
0.180 ± 0.010
0.15 ± 0.05
(0.006 ± 0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
0.56
(0.022)
1.45 ± 0.25
(0.057 ± 0.010)
101
