Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 2 1Publication Order Number:
BF959/D
BF959
VHF Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 30 Vdc
Emitter–Base V oltage VEBO 3.0 Vdc
Collector Current – Continuous IC100 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to
+150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient RθJA 200 °C/W
Thermal Resistance,
Junction to Case RθJC 83.3 °C/W
Device Package Shipping
ORDERING INFORMATION
BF959 TO–92
http://onsemi.com
TO–92
CASE 29
STYLE 21
5000 Units/Box
BF959ZL1 TO–92 2000/Ammo Pack
COLLECTOR
1
3
BASE
2
EMITTER
BF959RL1 TO–92 2000 Units/Box
MARKING DIAGRAM
BF
959
YWW
Y = Year
W = Work Week
3
2
1
BF959
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 – – Vdc
Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 30 – – Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 – – Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO – – 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
hFE 35
40 –
––
–
–
Collector–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) – – 1.0 Vdc
Base–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) – – 1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT700
600 –
––
–
MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, Pf = 0, f = 10 MHz) Cre – 0.65 – pF
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) Nf– 3.0 – dB
BF959
http://onsemi.com
3
Figure 1. hFE at 10 V
IC, COLLECTOR CURRENT (mA)
30
50
200
500
1000
10 1
Figure 2. VCE(sat) at IC/IB = 10
IC, COLLECTOR CURRENT (mA)
10 20 30 502345
hFE, DC CURRENT GAIN
100
40
20
100
30
50
200
500
10 1102030502345
100
40
20
Figure 3. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.8
1.2
1.6
1.8
2.0
0.4 1
Figure 4. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 502345
1.4
1
0.6
100 1 10 20 30 502 3 4 5 100
f, CURRENT-GAIN BANDWIDTH PRODUCT (GHz)
T
C, CAPACITANCE (pF)
0.8
1.2
1.6
1.8
0.4
1.4
1
0.6
0.2
Figure 5. Input Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
0.3
0.5
2
5
10
0.1 1
Figure 6. Output Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
10 20 30 502345
1
0.4
0.2
100 1 10 20 30 502345
Y11e (ms)
40
100
300
500
20
200
50
30
10
Y22e ( s)µ
3
4
mV
5 V
10 V
2 V
Cob
Cib
Cre
VCE = 10 V
g11e
b11e
VCE = 10 V
b22e
g22e
40
BF959
http://onsemi.com
4
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
ISSUE AL NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BF959/D
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