ITRMS ITAVM VRRM PSKT 170 Thyristor Modules Thyristor/Diode Modules = 2x 350 A = 2x 203 A = 1200-1800 V Preliminary Data Sheet VRSM VRRM VDSM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 Type 3 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85C; 180 sine ITSM, IFSM TVJ = 45C; VR = 0 i2dt (di/dt)cr 1 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 5400 5800 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 5000 5500 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 146 000 140 000 A 2s A 2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 125 000 126 000 A2 s A2 s TVJ = TVJM f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 1 A, diG/dt = 1 A/s repetitive, IT = 660 A 100 A/s non repetitive, IT = ITAVM 500 tP = 30 s tP = 500 s TVJ TVJM Tstg 50/60 Hz, RMS IISOL 1 mA Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins A/s TVJ = TVJM IT = ITAVM Weight 5 4 2 A A PGM Md 6 7 1 350 203 TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) VISOL 3 76 5 4 Maximum Ratings (dv/dt)cr PGAV VRGM 2 Version 1 PSKT 170/12io1 PSKT 170/14io1 PSKT 170/16io1 PSKT 170/18io1 t = 1 min t=1s Mounting torque (M6) Terminal connection torque (M8) Typical including screws 1000 V/s 120 60 20 10 W W W V -40...+130 130 -40...+125 C C C Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches 3000 3600 V~ V~ 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Advantages Space and weight savings Simple mounting Improved temperature and power cycling capabiltiy Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25C VT0 rT 40 V For power-loss calculations only (TVJ = 130C) 0.8 1 V m VGT VD = 6 V; IGT VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2 3 150 220 V V mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s 200 mA IH TVJ = 25C; VD = 6 V; RGK = 150 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/s 2 s tq TVJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 50 V/s; VD = 2/3 VDRM 200 s QS IRM TVJ = 125C; IT, IF = 300 A; -di/dt = 50 A/s 550 235 C A RthJK dS dA a per per per per thyristor (diode); DC current module thyristor (diode); DC current module Creeping distance on surface Creepage distance in air Maximum allowable acceleration 1: IGT, TVJ = 130C 140C mA 1.65 RthJC 10 V 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C VG 3 2 5 1 1 6 4 4: PGM = 20 W 5: PGM = 60 W IGD, TVJ = 130C 140C 0.1 10-3 10-2 6: PGM = 120 W 10-1 100 101 A IG 102 Fig. 1 Gate trigger characteristics other values see Fig. 8/9 typ. 0.164 0.082 0.204 0.102 K/W K/W K/W K/W 12.7 mm 9.6 mm 50 m/s2 100 TVJ = 25C s tgd typ. Limit 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red 1 0.01 Dimensions in mm (1 mm = 0.0394") 0.1 1 IG A Fig. 2 Gate trigger delay time M8x20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ 10 106 6000 ITSM A 50 Hz 80 % VRRM TVJ = 45C TVJ = 130C 5000 400 I2dt ITAVM A IFAVM DC 180 sin 120 60 30 A2s 300 4000 TVJ = 45C 105 3000 200 TVJ = 130C 2000 100 1000 0 0.001 0.01 s 0.1 104 1 ms 1 t t Fig. 4 i2dt versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Ptot 400 RthKA K/W W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 300 200 0 0 25 50 75 100 125 C 150 TC Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) DC 180 sin 120 60 30 100 0 10 0 100 200 300 A 0 25 50 75 100 125 C 150 TA ITAVM/IFAVM 2000 Ptot RthKA K/W W 0.04 0.06 0.08 0.1 0.15 0.2 0.3 1500 1000 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3xPSKT170 3xMCC170 500 0 0 200 400 600 A IdAVM 0 25 50 75 100 125 C 150 TA POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ 2000 Ptot W Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature RthKA K/W 0.04 0.06 0.08 0.1 0.15 0.2 0.3 1500 1000 Circuit W3 3xPSKT170 3xMCC170 500 0 0 100 200 300 400 A 0 25 50 75 125 C 150 100 TA IRMS 0.25 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 0.20 RthJC for various conduction angles d: d 0.15 DC 180 120 60 30 30 60 120 180 DC 0.10 0.05 -2 10 -1 10 0 10 1 10 s 2 10 t 0.30 1 2 3 4 Rthi (K/W) ti (s) 0.0077 0.0413 0.096 0.0149 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W ZthJK 0.160 0.171 0.180 0.203 0.247 Constants for ZthJC calculation: i 0.00 10-3 RthJC (K/W) 0.25 RthJK for various conduction angles d: 0.20 d DC 180 120 60 30 0.15 30 60 120 180 DC 0.10 0.05 0.00 10-3 10-1 100 0.200 0.211 0.220 0.243 0.287 Constants for ZthJK calculation: i 10-2 RthJK (K/W) 101 s t 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0077 0.0413 0.096 0.0149 0.04 0.00054 0.098 0.54 12 12 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/