DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 Schottky barrier double diodes Product specification Supersedes data of 1998 Oct 30 2001 Aug 27 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAT120 PINNING * Low switching losses BAT120 PIN * Capability of absorbing very high surge current * Fast recovery time * Guard ring protected * Plastic SMD package. A C S 1 k1 a1 a1 2 n.c. n.c. n.c. 3 k2 a2 k2 4 a1, a2 k1, k2 k1, a2 4 page 1 3 2 n.c. Fig.2 APPLICATIONS MGL171 BAT120A diode configuration (symbol). * Low power switched-mode power supplies * Rectification 4 age * Polarity protection. 4 page 1 DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package 2 n.c. Fig.3 1 TYPE NUMBER 2 Top view MARKING AT120A BAT120C AT120C MSB002 - 1 BAT120S AT120S 4 page Fig.1 Simplified outline (SOT223) and pin configuration. 1 3 2 n.c. Fig.4 2001 Aug 27 MGL172 BAT120C diode configuration (symbol). 3 MARKING CODE BAT120A 3 2 MGL173 BAT120S diode configuration (symbol). Philips Semiconductors Product specification Schottky barrier double diodes BAT120 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage IF continuous forward current IFSM non-repetitive peak forward current tp < 10 ms; half sinewave; JEDEC method IRSM non-repetitive peak reverse current tp = 100 s - 25 V - 1 A - 10 A - 0.5 A Tstg storage temperature -65 +150 C Tj junction temperature - 125 C Tamb operating ambient temperature -65 +125 C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF IR Cd forward voltage reverse current diode capacitance see Fig.5 IF = 100 mA 260 300 mV IF = 1 A 400 450 mV VR = 20 V; note 1; see Fig.6 80 500 A VR = 25 V; note 1; see Fig.6 - 1 mA VR = 20 V; Tj = 100 C; note 1 - 10 mA f = 1 MHz; VR = 4 V; see Fig.7 100 - pF Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT223 standard mounting conditions. 2001 Aug 27 3 VALUE UNIT 100 K/W Philips Semiconductors Product specification Schottky barrier double diodes BAT120 GRAPHICAL DATA MBK572 104 handbook, halfpage MHB970 105 handbook, halfpage IR (A) IF (mA) (1) (2) 104 103 (3) 103 (1) (2) (3) (4) 102 (4) 102 10 10 1 0 0.2 0.4 0.6 0.8 1 1.0 VF (V) (1) Tamb = 125 C. (2) Tamb = 100 C. Fig.5 (3) Tamb = 75 C. (4) Tamb = 25 C. Fig.6 MBK571 Cd (pF) 102 10 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 2001 Aug 27 10 (1) Tamb = 125 C. (2) Tamb = 100 C. Forward current as a function of forward voltage; typical values. 103 handbook, halfpage 0 4 20 VR (V) 30 (3) Tamb = 75 C. (4) Tamb = 25 C. Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier double diodes BAT120 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2001 Aug 27 REFERENCES IEC JEDEC EIAJ SC-73 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification Schottky barrier double diodes BAT120 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Aug 27 6 Philips Semiconductors Product specification Schottky barrier double diodes BAT120 NOTES 2001 Aug 27 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613510/03/pp8 Date of release: 2001 Aug 27 Document order number: 9397 750 08658