BAT120STRL13 - NXP - Product.Network

DATA SH EET

Product speciﬁcation

Supersedes data of 1998 Oct 30 2001 Aug 27

DISCRETE SEMICONDUCTORS

BAT120

Schottky barrier double diodes

halfpage

M3D087

2001 Aug 27 2

Philips Semiconductors Product speciﬁcation

Schottky barrier double diodes BAT120

FEATURES

•Low switching losses

•Capability of absorbing very high

surge current

•Fast recovery time

•Guard ring protected

•Plastic SMD package.

APPLICATIONS

•Low power switched-mode power

supplies

•Rectification

•Polarity protection.

DESCRIPTION

PlanarSchottkybarrierdoublediodes

encapsulated in a SOT223 plastic

SMD package

PINNING

PIN BAT120

ACS

2 n.c. n.c. n.c.

, a2k1, k2k1, a2

Fig.1 Simplified outline

(SOT223) and pin

configuration.

123

MSB002 - 1

Top view

Fig.2 BAT120A diode

configuration (symbol).

age

MGL171

2 n.c.

Fig.3 BAT120C diode

configuration (symbol).

age

MGL172

2 n.c.

Fig.4 BAT120S diode

configuration (symbol).

age

MGL173

2 n.c.

MARKING

TYPE NUMBER MARKING

CODE

BAT120A AT120A

BAT120C AT120C

BAT120S AT120S

2001 Aug 27 3

Philips Semiconductors Product speciﬁcation

Schottky barrier double diodes BAT120

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp= 300 µs; δ= 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT223 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VRcontinuous reverse voltage −25 V

IFcontinuous forward current −1A

FSM non-repetitive peak forward current tp<10 ms; half sinewave;

JEDEC method −10 A

IRSM non-repetitive peak reverse current tp= 100 µs−0.5 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

VFforward voltage see Fig.5

IF= 100 mA 260 300 mV

IF= 1 A 400 450 mV

IRreverse current VR= 20 V; note 1; see Fig.6 80 500 µA

VR= 25 V; note 1; see Fig.6 −1mA

= 20 V; Tj= 100 °C; note 1 −10 mA

Cddiode capacitance f = 1 MHz; VR= 4 V; see Fig.7 100 −pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 100 K/W

2001 Aug 27 4

Philips Semiconductors Product speciﬁcation

Schottky barrier double diodes BAT120

GRAPHICAL DATA

(1) Tamb = 125 °C.

(2) Tamb = 100 °C. (3) Tamb =75°C.

(4) Tamb =25°C.

Fig.5 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

1.0

VF (V)

(mA)

00.2 0.4 0.6 0.8

104

103

102

MBK572

(1)

(2)

(3)

(4)

handbook, halfpage

VR (V)

(µA)

010 20

105

104

103

102

MHB970

(1)

(2)

(3)

(4)

(1) Tamb = 125 °C.

(2) Tamb = 100 °C. (3) Tamb =75°C.

(4) Tamb =25°C.

Fig.6 Reverse current as a function of reverse

voltage; typical values.

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb =25°C.

handbook, halfpage

VR (V)

(pF)

01020

103

102

MBK571

2001 Aug 27 5

Philips Semiconductors Product speciﬁcation

Schottky barrier double diodes BAT120

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

2001 Aug 27 6

Philips Semiconductors Product speciﬁcation

Schottky barrier double diodes BAT120

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseor atanyotherconditions abovethosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofanyof theseproducts,conveysnolicenceortitle

under any patent, copyright, or mask work right to these

products,and makes norepresentationsor warrantiesthat

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2001 Aug 27 7

Philips Semiconductors Product speciﬁcation

Schottky barrier double diodes BAT120

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

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Printed in The Netherlands 613510/03/pp8 Date of release: 2001 Aug 27 Document order number: 9397 750 08658