PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET TEL: (407) 848-4311 FOWCON <r 0025.1. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 FAX: (407) 863-5946 6OV, BOA, 0.040 ABSOLUTE MAXIMUM RATINGS SDFO44 JAA SDF O44 JAB FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED 52 ALLOY PINS @ LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 PARAMETER SYMBOL UNITS Drain-source Volt.(1) Voss 60 Vde Droin-Gate Voltage Gate-Source Voltage Continuous . VGS #20 Vde (rie 5eec| Continuous 1D 30 Adc Drain Current Pulsed(3) 1DM 210 A Tota! Power Dissipation PO 100 W Power Dissipation Derating > 25C 0.77 W/C Operating & Storage Temp. | TJ/Tsig -55 TO +150 c Thermal Resistance RthJc 1.3 C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Te =25C UNLESS OTHER- WISE SPECIFIED SCREENING SCHEMATIC (D) [TERMINAL CONNECTIONS G H a- 1] GATE 1 | DRAIN 2| DRAIN |2 [SOURCE (S) [3fsource [3] cate STANDARD BEND CONF IGURAT IONS JAA S% 3 2 a a r 3 D U 12 12 3 (CUSTOM BEND OPTIONS AVAILABLE) STANDARD BEND CONF IGURAT IONS JAB (CUSTOM BEND OPTIONS AVAILABLE) PARAMETER SYMBOL TEST CONDITIONS MIN] TYP] MAX JUNITS Droin-source VGS=OV _ _ Breakdown vot t |8R)DSs 10=250 WA 60 V Veltoue eS VGS(TH)|VDS=VGS |D=250 pA [2.0] [4.0] Vv Gate Source _ _ _ Leakage IGSS |VGS=4+20 V 100] nA Zero Gote VOS=MAX.RATING VGS=O} - | - [250] HA Voltage Drain (DSS = RATING Current VES-0 Tustastc | 7 | > |2000) HA Static Orain- VGS=10 V Source On-State|RDS(ON ~ ~ - 04 Q Resistance(2) (ON) iD=30A Forward Trans- VDS 2 50 V _ Conductance (2) gfs 1DS=30A 1S S(U) Input Capacitance] CISS - |2500; - pF Output Copacitance| COSS oo= OY oe 8 V - |1200] - | pF R T f ot - Capacitance | CRSS ~_[310 pF Turn-On Delay |td{on)]ypp=30v RG=3.10 - - | 32 | ns Rise Time tr Dosen RD-0. 560 - | - |210} ns itch] , Turn-Off Delayltd(orf)|ire essentiaity inaepen- | = | - | 75 | ns Fal! Time if dent of operating temp.) [_ _ 130| ns Total Gate Chorge Gate-Source Plus| Qg - - [100)] nC Gote~-Drain) VGS=1OV, ID=52A Gote-Source VDS=0.8 MAX.RATING Charge Qgs (Gate charge is essenti- ~ ~ 21} nc - . Oo y Ingepencen a e (mi riee) Qgd operating temperature) _ _ sg nc Charge SOURCE-DRAIN DIQOE RATINGS & CHARACT .Tc = 25C [ UNLESS OTHER- WISE SPECIFIED PARAMETER SYMBOL TEST CONDITIONS MIN.| TYP .|MAX.|UNITS Continuous ig: Source Current] IS Modified MOSFET - | - | 30; A (Body Diode) symbol showing e integral reverse Pulse Source P-N junction recti- Current (Body ISM |fier (See schematic)| - J210] A Diode) (1) Diode Forward IF=S2A VGS=0V _ _ Voltage (2 VSD [tc=*25C 2.5) Reverse - _ - Recovery Time trr Tc=+25 C 250; ns Reverse Re- IF=S2A covery Charge Qrr |di/dt=100A/ WS - 7.537 - J pc A2 REV. 10/93 TJ = 25C to 150C. Pulse test: Repetitive Rating: 1 2 3 Pulse Width <300uS, Duty Cycle <2%. Pulse Width limited By Mox.junction Temperature.