BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor 2SC3930W
Document number: BL/SSSTF036 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V
Collector-emitter breakdown
voltage V(BR)CEO I
C=100μA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO I
E=100μA,IC=0 5 V
Collector cut-off current ICBO VCB=10V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE VCE=10V,IC=1mA 70 220
Transition frequency fT
VCE=10V, IE= 1mA
f=200MHz 150 MHz
Common emitter reverse transfer
capacitance Cre
VCE=10V, IE= 1mA
f=10.7MHz 1.5 pF
Noise figure NF VCB=10V,IC=1mA,f=5MHz 4 dB
Reverse transfer impedance Zrb VCB=10V,IC=1mA,f=2MHz 50 Ω
CLASSIFICANTION OF hFE
Marking VB VC
hFE 70-140 110-220
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified