INTEGRATED CIRCUITS DIVISION
DS-IXD_602-R07 www.ixysic.com 1
Features
•2A Peak Source/Sink Drive Current
•Wide Operating Voltage Range: 4.5V to 35V
•-40°C to +125°C Extended Operating Temperature
Range
•Logic Input Withstands Negative Swing of up to 5V
•Outputs Ma y be Connected in Parallel for Higher
Drive Current
•Matched Rise and Fall Times
•Low Propaga tion Delay Time
•Low 10A Supply Current
•Low Output Impedance
Applications
•Efficient Power MOSFET and IGBT Switching
•Switch Mode Power Supplies
•Motor Controls
•DC to DC Converters
•Class-D Switching Amplifiers
•Pulse Transf ormer Driver
Description
The IXDF602/IXDI602/IXDN602 dual high-speed gate
drivers are especially w ell suit ed for driving the latest
IXYS MOSFETs and IGBTs. Each of the two outputs
can source and sink 2A of peak current while
producing v oltage rise and f all times of less than 10ns .
The input of each driver is CMOS compatib le , and is
virtually immune to latch up. Proprietary circuitry
eliminates cross conduction and current
“shoot-through.” Low propagat io n delay and fast,
matched rise and f all times make the IXD_602 family
ideal for high-freq uency and high-po wer applicat ions .
The IXDN602 is configured as a dual non-inverting
driver, the IXDI602 is configured as a dual inverting
driver, and the IXDF602 has one inverting and one
non-inverting driver.
The IXD_602 family is a vailable in a standard 8-pin
DIP (PI), an 8-pin SOIC (SIA), an 8-pin Power SOIC
with an exposed metal back (SI), and an 8-pin DFN
(D2) package.
Ordering Information
Part Number Logic
Configuration Package Type Packing
Method Quantity
IXDF602D2TR 8-Pin DFN Tape & Reel 2000
IXDF602PI 8-Pin DIP Tube 50
IXDF602SI 8-Pin Power SOIC with Exposed Metal Back Tube 100
IXDF602SITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel 2000
IXDF602SIA 8-Pin SOIC Tube 100
IXDF602SIATR 8-Pin SOIC Tape & Reel 2000
IXDI602D2TR 8-Pin DFN Tape & Reel 2000
IXDI602PI 8-Pin DIP Tube 50
IXDI602SI 8-Pin Power SOIC with Exposed Metal Back Tube 100
IXDI602SITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel 2000
IXDI602SIA 8-Pin SOIC Tube 100
IXDI602SIATR 8-Pin SOIC Tape & Reel 2000
IXDN602D2TR 8-Pin DFN Tape & Reel 2000
IXDN602PI 8-Pin DIP Tube 50
IXDN602SI 8-Pin Power SOIC with Exposed Metal Back Tube 100
IXDN602SITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel 2000
IXDN602SIA 8-Pin SOIC Tube 100
IXDN602SIATR 8-Pin SOIC Tape & Reel 2000
INA
INB
A
B
OUTA
OUTB
INA
INB
A
B
OUTA
OUTB
INA
INB
OUTA
OUTB
A
B
IXD_602
2-Ampere Dual Low-Side
Ultrafast MOSFET Drivers
INTEGRATED CIRCUITS DIVISION
IXD_602
2www.ixysic.com R07
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Pin Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.5 Electrical Characteristics: TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.6 Electrical Characteristics: TA = - 40°C to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.7 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2. IXD_602 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Characteristics Test Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3. Block Diagrams & Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 IXDI602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 IXDF602. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.3 IXDN602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.3 Soldering Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.4 Board Wash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.5 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
INTEGRATED CIRCUITS DIVISION
IXD_602
R07 www.ixysic.com 3
1 Specifications
1.1 Pin Configurations 1.2 Pin Definitions
1.3 Absolut e Max imum Rating s
Unless otherwise specified, absolute maxim um electrical ratings ar e at 25°C
Absolute maximum ratings are stress r a tings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
1.4 Recommended Operating Conditions
IXDF602
NC
INA
GND
INB
NC
OUTA
VCC
OUTB
1
4
3
2
8
5
6
7
A
B
IXDI602
NC
INA
GND
INB
NC
OUTA
VCC
OUTB
1
4
3
2
8
5
6
7
A
B
IXDN602
NC
INA
GND
INB
NC
OUTA
VCC
OUTB
1
4
3
2
8
5
6
7
A
B
Pin Name Description
INA Channel A Logic Input
INB Channel B Logic Input
OUTA
OUTA
Channel A Output - Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
OUTB
OUTB
Channel B Output - Sources or sinks current to
turn on or turn off a discrete MOSFET or IGBT
VCC Supply Voltage - Provides power to the device
GND Ground - Common ground reference for the
device
Parameter Symbol Minimum Maximum Units
Supply Voltage VCC -0.3 40 V
Input Voltage VIN -5.0 VCC+0.3 V
Output Current IOUT -±2A
Junction Temperature TJ-55 +150 °C
Storage Temperature TSTG -65 +150 °C
Parameter Symbol Range Units
Supply Voltage VCC 4.5 to 35 V
Operating Temperature Range T
A-40 to +125 °C
INTEGRATED CIRCUITS DIVISION
IXD_602
4www.ixysic.com R07
1.5 Electrical Ch ara ct e ri st ic s: TA = 25°C
Test Conditions: 4.5V < VCC < 35V, one channel (unless otherwise noted).
1.6 Electrical Ch ara ct e ri st ic s: TA = - 40°C to +125°C
Test Conditions: 4.5V < VCC < 35V, one channel (unless otherwise noted).
Parameter Conditions Symbol Minimum Typical Maximum Units
Input Voltage, High 4.5V < VCC < 18V VIH 3.0 - - V
Input Voltage, Low 4.5V < VCC < 18V VIL --0.8
Input Current 0V < VIN < VCC IIN --±10A
Output Voltage, High - VOH VCC-0.025 --
V
Output Voltage, Low - VOL - - 0.025
Output Resistance, High State VCC=18V, IOUT=-10mA ROH -2.54
Output Resistance, Low State VCC=18V, IOUT=10mA ROL -1.53
Output Current, Continuous Limited by package power
dissipation IDC --±1A
Rise Time VCC=18V, CLOAD=1000pF tr-7.515
ns
Fall Time VCC=18V, CLOAD=1000pF tf-6.515
On-Time Propagation Delay VCC=18V, CLOAD=1000pF tondly -3560
Off-Time Propagation Delay VCC=18V, CLOAD=1000pF toffdly -3860
Power Supply Current
VCC=18V, VIN=3.5V
ICC
-13mA
VCC=18V, VIN=0V -<110
A
VCC=18V, VIN=VCC -<110
Parameter Conditions Symbol Minimum Maximum Units
Input Voltage, High 4.5V < VCC < 18V VIH 3.3 - V
Input Voltage, Low 4.5V < VCC < 18V VIL -0.65
Input Current 0V < VIN < VCC IIN -10 10 A
Output Voltage, High - VOH VCC-0.025 -V
Output Voltage, Low - VOL - 0.025
Output Resistance, High State VCC=18V, IOUT=-10mA ROH -6
Output Resistance, Low State VCC=18V, IOUT=10mA ROL -5
Output Current, Continuous Limited by package power
dissipation IDC -±1A
Rise Time VCC=18V, CLOAD=1000pF tr-18
ns
Fall Time VCC=18V, CLOAD=1000pF tf-18
On-Time Propagation Delay VCC=18V, CLOAD=1000pF tondly -75
Off-Time Propagation Delay VCC=18V, CLOAD=1000pF toffdly -75
Power Supply Current
VCC=18V, VIN=3.5V
ICC
-3.5mA
VCC=18V, VIN=0V -150
A
VCC=18V, VIN=VCC -150
INTEGRATED CIRCUITS DIVISION
IXD_602
R07 www.ixysic.com 5
1.7 Thermal Characteristics
2 IXD_602 Performance
2.1 Timing Diagrams
2.2 Characterist ic s Te s t D iagram
Package Parameter Symbol Rating Units
IXDD602D2 (8-Pin DFN)
Thermal Resistance, Junction-to-Ambient JA
35
°C/W
IXD_602PI (8-Pin DIP) 125
IXD_602SI (8-Pin Power SOIC) 85
IXD_602SIA (8-Pin SOIC) 120
IXD_602SI (8-Pin Power SOIC) Thermal Resistance, Junction-to-Case JC 10 °C/W
10%
90%
t
ondly
t
offdly
t
r
t
f
V
IH
V
IL
INx
OUTx
10%
90%
t
ondly
t
offdly
t
f
t
r
V
IH
V
IL
INx
OUTx
Inverting Driver WaveformsNon-Inverting Driver Waveforms
INAOUTA
GND
VCC
INB
VCC
+
-
VIN
0.1μF10μF
OUTB
CLOAD
Tektronix
Current Probe
6302
Tektronix
Current Probe
6302
CLOAD
INTEGRATED CIRCUITS DIVISION
IXD_602
6www.ixysic.com R07
3 Block Diagrams & Truth Tab les
3.1 IXDI602
3.2 IXDF602
3.3 IXDN602
INXOUTX
01
10
INA OUTA
01
10
INB OUTB
00
11
INA
GND
INB
OUTA
VCC
OUTB
VCC
INXOUTX
00
11
INA
GND
INB
OUTA
VCC
OUTB
VCC
INTEGRATED CIRCUITS DIVISION
IXD_602
R07 www.ixysic.com 7
4 Typical Performance Characteristics
Load Capacitance (pF)
0 1000 2000 3000 4000 5000
Rise Time (ns)
0
20
40
60
80
100
120 Rise Time vs. Load Capacitance
VCC=4.5V
VCC=8V
VCC=12V
VCC=18V
VCC=25V
VCC=30V
VCC=35V
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Time (ns)
4
5
6
7
8
9
10
11
12
Rise & Fall Time vs. Temperature
(VIN=0-5V, VCC=18V, CL=1nF)
tr
tf
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Fall Time (ns)
0
20
40
60
80
100
120
Fall Time vs. Supply Voltage
(VIN=0-5V, f=10kHz, TA=25ºC)
CL=4.7nF
CL=1nF
CL=470pF
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Rise Time (ns)
0
20
40
60
80
100
120
Rise Time vs. Supply V oltage
(VIN=0-5V, f=10kHz, TA=25ºC)
CL=4.7nF
CL=1nF
CL=470pF
Load Capacitance (pF)
0 1000 2000 3000 4000 5000
Fall Time (ns)
0
20
40
60
80
100
120 Fall Time vs. Load Capacitance
VCC=4.5V
VCC=8V
VCC=12V
VCC=18V
VCC=25V
VCC=30V
VCC=35V
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Input Threshold (V)
1.8
2.0
2.2
2.4
2.6
2.8
Input Threshold vs. T emperature
(VCC=18V, CL=1nF)
Min VIH
Max VIL
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Propagation Delay (ns)
20
25
30
35
40
45
50
55
Propagation Delay vs. Temperature
(VCC=18V, CL=1nF)
toffdly
tondly
Input V oltage (V)
0 5 10 15 20
Propagation Delay (ns)
20
30
40
50
60
70
Propagation Delay vs. Input Voltage
(VCC=18V, CL=1nF)
toffdly
tondly
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Propagation Delay (ns)
0
50
100
150
200
Propagation Delay vs. Supply Voltage
(VIN=0-5V, CL=1nF, f=1kHz)
toffdly
tondly
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Input Threshold (V)
1.0
1.5
2.0
2.5
3.0
3.5 Input Threshold vs. Supply Voltage
Min VIH
Max VIL
INTEGRATED CIRCUITS DIVISION
IXD_602
8www.ixysic.com R07
Frequency (kHz)
0.1 1 10 100 1000 10000
Supply Current (mA)
0.01
0.1
1
10
100
1000
Supply Current vs. Frequency
Both Outputs Active
(VCC=12V)
CL=4.7nF
CL=1nF
CL=470pF
Frequency (kHz)
0.1 1 10 100 1000 10000
Supply Current (mA)
0.01
0.1
1
10
100
1000
Supply Current vs. Frequency
Both Outputs Active
(VCC=8V)
CL=4.7nF
CL=1nF
CL=470pF
Load Capacitance (pF)
100 1000 10000
Supply Current (mA)
0
50
100
150
200
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=18V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
Load Capacitance (pF)
100 1000 10000
Supply Current (mA)
0
50
100
150
200
250
300
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=12V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
Load Capacitance (pF)
100 1000 10000
Supply Current (mA)
0
50
100
150
200
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=8V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
Frequency (kHz)
0.1 1 10 100 1000 10000
Supply Current (mA)
0.01
0.1
1
10
100
1000
Supply Current vs. Frequency
Both Outputs Active
(VCC=18V)
CL=4.7nF
CL=1nF
CL=470pF
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Source Current (A)
0
-1
-2
-3
-4
-5
-6
-7
-8
Output Source Current
vs. Supply Voltage
(CL=27nF)
Frequency (kHz)
0.1 1 10 100 1000 10000
Supply Current (mA)
0.01
0.1
1
10
100
1000
Supply Current vs. Frequency
Both Outputs Active
(VCC=35V)
CL=4.7nF
CL=1nF
CL=470pF
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Supply Current (mA)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Dynamic Supply Current
vs. Temperature
(VIN=0-5V, VCC=18V, CL=1nF, f=1kHz)
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Supply Current (mA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Quiescent Supply Current
vs. Temperature
(VCC=18V)
VIN=3.5V
VIN=5V
VIN=10V
VIN=0V & 18V
Load Capacitance (pF)
100 1000 10000
Supply Current (mA)
0
50
100
150
200
250
300
350
400
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=35V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Sink Current (A)
0
1
2
3
4
5
6
7
8
Output Sink Current
vs. Supply Voltage
(CL=27nF)
INTEGRATED CIRCUITS DIVISION
IXD_602
R07 www.ixysic.com 9
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Output Resistance (Ω)
0
2
4
6
8
10
High-State Output Resistance
vs. Supply Voltage
(IOUT= -10mA)
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Sink Current (A)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Output Sink Current vs. Temperature
(VCC=18V, CL=27nF)
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Source Current (A)
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
Output Source Current
vs. Temperature
(VCC=18V, CL=27nF)
Supply V oltage (V)
0 5 10 15 20 25 30 35 40
Output Resistance (Ω)
0
2
4
6
8
10
Low State Output Resistance
vs. Supply Voltage
(IOUT= +10mA)
INTEGRATED CIRCUITS DIVISION
IXD_602
10 www.ixysic.com R07
5 Manufacturing Information
5.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moistur e ing r ession. IXYS Integrated
Circuits Division classifies its plastic encapsulated devices for moistu re se nsitivity according to the latest
v ersion o f the joint indust ry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation.
We test all of our products to t he maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operab le life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) classification as shown below, and should be handled
according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
5.2 ESD Sensitivi ty
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
5.3 Soldering Profile
Provided in the table below is the Classification Temperature (TC) of this product and the maximum dwell time the
body temperature of this device may be (TC - 5) ºC or greater. The classification temperature sets the Maximum Bo dy
Temperature allow ed for this device during lead-free ref low processes. For through-hole de vices, and any other
processes, the guidelines of J-STD- 020 must be observed.
5.4 Board Was h
IXYS Integr ated Circu it s Division recommends t he use of no-clean f lux formulations. Board washing to reduce or
remove flux residue following the solder reflow process is accep table provided proper precautions ar e taken to
pre vent damage to the device. These pr ecautions include but are not limited to: using a lo w pressure wash and
providing a follow up bak e cycle suff icien t to remove any moistur e trapped within the device due to the washing
process. Due to the v ariability of the wash par ameters used to clean the board, determination of the bake temper ature
and duration necessary to remove the moisture trapped within the package is the responsibility of the user
(assembler) . Cleaning or drying methods that employ ultrasonic energy ma y damage the de vice and should not be
used. Additionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based.
Device Moisture Sensitivity Level (MSL) Classification
IXD_602 All Versions MSL 1
Device Classification Temperature (TC)Dwell Time (tp)Max Reflow Cycles
IXD_602SI / IXD_602SIA / IXD_602D2 260°C 30 seconds 3
IXD_602PI 250°C 30 seconds -
INTEGRATED CIRCUITS DIVISION
IXD_602
R07 www.ixysic.com 11
5.5 Mechanical D ime ns io n s
5.5.1 SIA (8-Pin SOIC)
5.5.2 SI (8-Pin Power SOIC with Exposed Metal Back)
Dimensions
MIN / MAX
1.75 MAX
(0.069 MAX)
1.25 MIN
(0.049 MIN)
0.10 / 0.25
(0.004 / 0.010)
0.10
(0.004)
4
4.80 / 5.00
(0.189 / 0.197)
TOP VIEW
PIN #1
5.80 / 6.20
(0.228 / 0.244)
5
3.80 / 4.00
(0.150 / 0.157)
0.31 / 0.51
(0.012 / 0.020)
8x
SEATING PLANE
GAUGE PLANE
8°- 0°
0.10 / 0.25
(0.004 / 0.010)
0.40 / 1.27
(0.016 / 0.050)
A
0.25
(0.010)
PCB Land Pattern
1.55
(0.061)
0.60
(0.024)
3.75
(0.148)
A
Notes:
1. Controlling dimension: millimeters.
2. All dimensions are in mm (inches).
3. This package conforms to JEDEC Standard MS-012, variation AA, Rev. F.
4. Dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15mm per end.
5. Dimension does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.25mm per side.
6. Lead thickness includes plating.
6x
1.27
0.05
Dimensions
MIN / MAX
1.70 MAX
(0.067 MAX)
1.25 MIN
(0.049 MIN)
0 / 0.15
(0 / 0.006)
0.10
(0.004)
4
4.80 / 5.00
(0.189 / 0.197)
TOP VIEW
PIN #1
5.80 / 6.20
(0.228 / 0.244)
5
3.80 / 4.00
(0.150 / 0.157)
0.31 / 0.51
(0.012 / 0.020)
8x
BOTTOM VIEW
2.05 / 2.41
(0.081 / 0.095)
2.81 / 3.30
(0.111 / 0.130)
SEATING PLANE
GAUGE PLANE
8°- 0°
0.10 / 0.25
(0.004 / 0.010)
0.40 / 1.27
(0.016 / 0.050)
A
0.25
(0.010)
PCB Land Pattern
1.55
(0.061)
0.60
(0.024)
3.85
(0.152) 2.23
(0.088)
3.055
(0.120)
A
6x
1.27
0.05
Notes:
1. Controlling dimension: millimeters.
2. All dimensions are in mm (inches).
3. This package conforms to JEDEC Standard MS-012, variation BA, Rev. F.
4. Dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15mm per end.
5. Dimension does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.25mm per side.
6. The exposed metal pad on the back of the package should be connected to GND. It is not suitable for carrying current.
7. Lead thickness includes plating.
INTEGRATED CIRCUITS DIVISION
IXD_602
12 www.ixysic.com R07
5.5.3 Tape & Reel Information for SI and SIA Packages
5.5.4 PI (8-Pin DIP)
Dimensions
mm
(inches)
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
Embossment
Embossed Carrier
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
K
0
= 2.10
(0.083)
W=12.00
(0.472)
B
0
=5.30
(0.209)
User Direction of Feed
A
0
=6.50
(0.256) P1=8.00
(0.315)
Dimensions
mm
(inches)
PCB Hole Pattern
2.540 ± 0.127
(0.100 ± 0.005)
6.350 ± 0.127
(0.250 ± 0.005) 9.144 ± 0.508
(0.360 ± 0.020)
0.457 ± 0.076
(0.018 ± 0.003)
9.652 ± 0.381
(0.380 ± 0.015)
7.239 TYP.
(0.285)
7.620 ± 0.254
(0.300 ± 0.010)
4.064 TYP
(0.160)
0.813 ± 0.102
(0.032 ± 0.004)
8-0.800 DIA.
(8-0.031 DIA.) 2.540 ± 0.127
(0.100 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
3.302 ± 0.051
(0.130 ± 0.002)
Pin 1
0.254 ± 0.0127
(0.010 ± 0.0005)
INTEGRATED CIRCUITS DIVISION
IXD_602
R07 www.ixysic.com 13
5.5.5 D2 (8-Pin DFN)
5.5.6 Tape & Reel Information for D2 Package
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
5.00 BSC
(0.197 BSC)
4.00 BSC
(0.157 BSC)
0.80 / 1.00
(0.031 / 0.039)
0.10
(0.004)
0.95 BSC
(0.037 BSC)
0.74 / 0.83
(0.029 / 0.033)
0.30 / 0.45
(0.012 / 0.018)
3.03 / 3.10
(0.119 / 0.122)
2.53 / 2.60
(0.100 / 0.102)
0.35 / 0.45 x 45º
(0.014 / 0.018 x 45º)
Pin 1
Pin 1 Pin 8
0.20 REF
(0.008 REF)
Recommended PCB Land Pattern
4.50
(0.177)
0.45
(0.018)
1.20
(0.047)
3.10
(0.122)
2.60
(0.102)
0.95
(0.037)
0.35 x 45º
(0.014 x 45º)
NOTE:
The exposed metal pad on the back of the D2 package should
be connected to GND. Pad is not suitable for carrying current.
K0=1.90 ± 0.10
B0=5.40 ± 0.10
5º MAX
A0=4.25 ± 0.10
5º MAX
0.30 ± 0.05
(0.05)
(0.05)
R0.75 TYP
P1=8.00 ± 0.10
2.00 ± 0.05
4.00 ± 0.10 See Note #2
12.00 ± 0.30
5.50 ± 0.05
1.75 ± 0.10
∅1.50 (MIN)
∅1.55 ± 0.05
NOTES:
1. A0 & B0 measured at 0.3mm above base of pocket.
2. 10 pitches cumulative tol. ± 0.2mm
3. ( ) Reference dimensions only.
4. Unless otherwise specified, all dimensions in millimeters.
Embossment
Embossed Carrier
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representati ons or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatso ever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-IXD_602-R07
©Copyright 2017, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
10/25/2017