TK1214M - Dynex Semiconductor

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TK12

www.dynexsemi.com

FEATURES

■High Surge Capability

APPLICATIONS

■High Power Drives

■High Voltage Power Supplies

■DC Motor Control

■Welding

■Battery Chargers

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table, then:-

Add K to type number for 1/2" 20 UNF thread, e.g. TK12 18K.

Add M to type number for M12 thread, e.g. TK12 14M.

Note: Please use the complete part number when ordering and

quote this number in any future correspondance relating to your

order.

KEY PARAMETERS

VDRM 2000V

IT(AV) 75A

ITSM 1400A

dVdt* 200V/µs

dI/dt 500A/µs

*Higher dV/dt selections available

TK12

Phase Control Thyristor

Advance Information

Replaces January 2000 version, DS4252-4.0 DS4252-5.0 July 2001

TK12 20 M or K

TK12 18 M or K

TK12 16 M or K

TK12 14 M or K

Conditions

Tvj = 0˚ to 125˚C,

IDRM = IRRM = 100mA,

VDRM, VRRM tp = 10ms,

VDSM & VRSM =

VDRM & VRRM + 100V

Respectively

Lower voltage grades available.

Type Number Repetitive Peak

Voltages

VDRM VRRM

2000

1800

1600

1400

Fig. 1 Package outline

Outline type code: TO94.

See Package Details for further information.

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TK12

SURGE RATINGS

Conditions

10ms half sine; Tcase = 125oC

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 125oC

VR = 0

Max. Units

Symbol Parameter

ITSM Surge (non-repetitive) on-state current

I2tI

2t for fusing

ITSM Surge (non-repetitive) on-state current

I2tI2t for fusing 9.8 x 103A2s

1.4 kA

6.2 x 103A2s

1.12 kA

THERMAL AND MECHANICAL DATA

Conditions Min. Max. Units

Symbol Parameter

- 0.24 oC/WThermal resistance - junction to caseRth(j-c)

Mounting torque 15.0Nm

with mounting compound 0.08-oC/W

Thermal resistance - case to heatsinkRth(c-h)

125 oC

Tvj Virtual junction temperature

Tstg Storage temperature range

Reverse (blocking)

-Mounting torque 12.0 15.0 Nm

–40 150 oC

On-state (conducting) - 125 oC

Tcase = 80˚C unless stated otherwise.

Symbol Parameter Conditions UnitsMax.

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

Half wave resistive load 75 A

- 120 A

- 100 A

CURRENT RATINGS

Tcase = 60˚C unless stated otherwise.

Symbol Parameter Conditions UnitsMax.

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

Half wave resistive load 104 A

- 163 A

- 139 A

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TK12

www.dynexsemi.com

DYNAMIC CHARACTERISTICS

VTM

ParameterSymbol Conditions

Maximum on-state voltage At 150A peak, Tcase = 25oC

IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC

Gate source 20V, 20Ω

tr ≤ 0.5µs, Tj = 125˚C

dV/dt Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit

Min. Max. Units

- 2.0 V

-10mA

- 200 V/µs

Repetitive 50Hz - 500 A/µs

Non-repetitive - 800 A/µs

Rate of rise of on-state current

dI/dt

VT(TO) Threshold voltage At Tvj = 125oC

rTOn-state slope resistance At Tvj = 125oC

tgd Delay time

ILLatching current Tj = 25oC, VD = 12V

IHHolding current Tj = 25oC, VD = 12V, ITM = 1A

1.4-V

- 4.0 mΩ

- 1.5 µs

VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,

dIG/dt = 1A/µs, Tj = 25oC

--mA

-50mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

VDRM = 12V, Tcase = 25oC, RL = 6Ω

ConditionsParameterSymbol

VGT Gate trigger voltage VDRM = 12V, Tcase = 25oC, RL = 6Ω

IGT Gate trigger current

VGD Gate non-trigger voltage At VDRM Tcase = 125oC, RL = 12Ω

VFGM Peak forward gate voltage Anode positive with respect to cathode

VFGN Peak forward gate voltage Anode negative with respect to cathode

VRGM Peak reverse gate voltage

IFGM Peak forward gate current Anode positive with respect to cathode

PGM Peak gate power -

PG(AV) Mean gate power

- 3.0 V

- 125 mA

- 0.2 V

- 3.0 V

- 0.25 V

-5V

-4A

-16W

-3W

Typ. Max. Units

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TK12

CURVES

0 4.0 8.0 12.0

Instantaneous on-state voltage V

- (V)

500

1000

1500

2000

Instantaneous on-state current, I

- (A)

Measured under pulse conditions

= 125˚C

SINUSOIDAL CURRENT WAVEFORM

RECTANGULAR CURRENT WAVEFORM

Fig.3 Maximum on-state power dissipation for sinusoidal

current waveform

Fig.2 Maximum (limit) on-state characteristics

Fig.4 Maximum allowable case temperature for sinusoidal

current waveform

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Fig.5 Maximum on-state power dissipation for rectangular

current waveform Fig.6 Maximum allowable case temperature for rectangular

current waveform

Fig.7 Gate trigger characteristics Fig.8 Transient thermal impedance - junction to case

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TK12

Fig.9 Multiplying factor for non-repetive sub-cycle surge on-

state current and I2t rating Fig.10 Multiplying factor for non-repetive surge

on-state current

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TK12

www.dynexsemi.com

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

160 ± 10

8 min

Ø8.4 ± 0.3

210 ± 10

Ø4

15 max

30 max

Hex. 27AF

M = M12

K = 1/2" 20 UNF K = 20.6 ± 0.6

M = 18.0 ± 0.5

Nominal weight: 120g

Mounting torque: 15Nm ±10%

Gate lead colour: White

Cathode lead colour: Red

Package outine type code: TO94

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TK12

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,

and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability

of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The

Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our

customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution

(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded

clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm

discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.

Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the

performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on

request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer

service office.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

SALES OFFICES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (949) 733-3005. Fax: (949) 733-2986.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.

TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: 00-44-(0)1522-500500

Fax: 00-44-(0)1522-500550

DYNEX POWER INC.

99 Bank Street, Suite 410,

Ottawa, Ontario, Canada, K1P 6B9

Tel: 613.723.7035

Fax: 613.723.1518

Toll Free: 1.888.33.DYNEX (39639)

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as

a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves

the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such

methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication

or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

No Annotation: The product parameters are fixed and the product is available to datasheet specification.