MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1414-30L
TECHNICAL DATA
Rev. Aug. 2007
FEATURES
HIGH POWER BROAD BAND INTERNALLY MATCHED FET
P1dB=45.0dBm at 14.0GHz to 14.5GHz
HIGH GAIN HERMETICALLY SEALED PACKAGE
G1dB=5.5dB at 14.0GHz to 14.5GHz
LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=38.0dBm Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 44.0 45.0 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 4.5 5.5 ⎯
Drain Current IDS1 A ⎯ 10.0 11.0
Power Added Efficiency ηadd
VDS= 10V
IDSset≅7.0A
f = 14.0 to 14.5GHz
% ⎯ 23 ⎯
3rd Order Intermodulation
Distortion IM3 dBc -25
⎯ ⎯
Drain Current IDS2
Two-Tone Test
Po= 38.0dBm
(Single Carrier Level) A ⎯ 9.0 10.1
Channel Temperature Rise ΔTch (VDS X IDS +Pin-P1dB)
X Rth(c-c) °C ⎯ ⎯ 100
Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
IDS= 9.6A S ⎯ 5.5 ⎯
Pinch-off Voltage VGSoff VDS= 3V
IDS= 290mA V -0.7 -2.0 -4.5
Saturated Drain Current IDSS VDS= 3V
VGS= 0V A ⎯ 20.0 ⎯
Gate-Source Breakdown
Voltage VGSO IGS= -290μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ ⎯ 1.1
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
2
TIM1414-30L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 20
Total Power Dissipation (Tc= 25 °C) PT W 136
Channel Temperature Tch °C 175
Storage Tstg °C -65 to +175
PACKAGE OUTLINE (7-AA03A)
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
Unit in mm
c Gate
d Source
e Drain
