Phototransistors PNZ109F (PN109F) Silicon NPN Phototransistor Unit : mm o4.60.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : p = 900 nm (typ.) 12.7 min. 4.50.2 For optical control systems Glass window 3-o0.450.05 2.540.25 Fast response : tr = 8 s (typ.) 2 0. 0 1. 3 3 2 1 Absolute Maximum Ratings (Ta = 25C) Parameter 45 1. 0 0. 15 Long lifetime, high reliability Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C 1: Emitter 2: Base 3: Collector o5.75 max. Electro-Optical Characteristics (Ta = 25C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wave length Acceptance half angle *2 VCE = 10V, L = 100 lx*1 min typ max Unit 0.05 2 A 0.3 mA P VCE = 10V 900 nm Measured from the optical axis to the half power point 40 deg. 8 s Rise time tr*2 VCC = 10V, ICE(L) = 1mA Fall time tf*2 RL = 100 Collector saturation voltage *1 ICE(L) Conditions VCE = 10V VCE(sat) s 9 ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;;;; ;; 50 (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ109F PC -- Ta ICE(L) -- VCE 80 40 20 40 60 Ambient temperature 80 800 lx 700 lx 600 lx 8 500 lx 6 400 lx 4 300 lx 200 lx 2 0 100 900 lx L = 1000 lx Ta (C ) 0 4 8 12 ICEO -- Ta 10 -2 Ambient temperature 80 Ta (C ) 10 50 40 30 20 80 80 60 40 50 60 800 900 1000 1100 1200 tf -- ICE(L) VCC = 10V Ta = 25C VCC = 10V Ta = 25C 10 4 10 3 10 2 RL = 1k 500 10 10 2 RL = 1k 500 10 100 70 80 700 Wavelength (nm) Ta (C ) tf (s) 40 10 4 VCE = 10V Ta = 25C 0 600 120 10 3 tr (s) 60 30 10 3 L (lx) Spectral sensitivity characteristics tr -- ICE(L) 20 Rise time 70 40 10 4 Relative sensitivity S (%) 90 80 0 Ambient temperature 100 10 2 10 20 10 -1 - 40 100 1 100 1 Directivity characteristics 0 10 -1 Illuminance Relative sensitivity 10 -1 60 1 VCE (V) S (%) ICE(L) (mA) 1 Collector photo current ICEO (A) 10 40 10 10 -2 VCE = 10V L = 100 lx T = 2856K VCE = 10V 20 10 2 ICE(L) -- Ta 10 0 16 Collector to emitter voltage 10 2 10 -3 - 20 100 lx 50 lx 10 lx 20 24 ICE(L) (mA) 10 VCE = 10V Ta = 25C T = 2856K 10 3 Fall time 0 Ta = 25C T = 2856K Collector photo current ICE(L) (mA) 120 Collector photo current PC (mW) Collector power dissipation 160 0 - 20 Dark current ICE(L) -- L 12 200 100 1 1 90 10 -1 10 -2 10 -1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 -1 10 -2 10 -1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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