BFQ591 NPN 7 GHz wideband transistor Rev. 04 -- 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 FEATURES PINNING * High power gain PIN * Low noise figure 1 emitter * High transition frequency 2 collector * Gold metallization ensures excellent reliability. 3 base DESCRIPTION APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. DESCRIPTION NPN wideband transistor in a SOT89 plastic package. 3 2 1 MARKING TYPE NUMBER MARKING CODE BFQ591 Fig.1 Simplified outline (SOT89). BCp QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCEO collector-emitter voltage open base - - 15 V IC collector current (DC) - - 200 mA W Ptot total power dissipation Ts 90 C; note 1 - - 2.25 hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250 Cre feedback capacitance IC = 0; VCB = 12 V; f = 1 MHz - 0.8 - pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz - 7 - GHz GUM maximum unilateral power gain IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C - 11 - dB |s21|2 insertion power gain IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C - 10 - dB Note 1. Ts is the temperature at the soldering point of the collector pin. Rev. 04 - 2 October 2007 2 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 3 V IC collector current (DC) - 200 mA Ptot total power dissipation - 2.25 W Tstg storage temperature -65 +150 C Tj junction temperature - 175 C Ts 90 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 90 C; note 1 VALUE UNIT 38 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. Rev. 04 - 2 October 2007 3 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE = 0 - - 20 V V(BR)CES collector-emitter breakdown voltage IC = 0.1 mA; IB = 0 - - 15 V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 - - 3 V ICBO collector-base leakage current IE = 0; VCB = 10 - - 100 nA hFE DC current gain IC = 70 mA ; VCE = 8 V 60 90 250 Cre feedback capacitance IC = 0; VCB = 12 V; f = 1 MHz - 0.8 - pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz - 7 - GHz GUM maximum unilateral power gain; note 1 IC = 70 mA; VCE = 12 V; Tamb = 25 C - 11 - dB f = 900 MHz - 5.5 - dB |s21|2 insertion power gain IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 C - 10 - dB Vo output voltage note 2 - 700 - mV f = 2 GHz Notes 2 s 21 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------- dB . 2 2 ( 1 - s 11 ) ( 1 - s 22 ) 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q+r) = 793.25 MHz. Rev. 04 - 2 October 2007 4 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 MLD796 3 MRA749 250 handbook, halfpage handbook, halfpage hFE Ptot (W) 200 2 150 100 1 50 0 50 0 100 150 Ts (C) 200 0 10-2 10-1 1 10 IC (mA) 102 VCE = 12 V. Fig.3 DC current gain as a function of collector current; typical values. Fig.2 Power derating curve. MLD797 1.2 MLD798 8 handbook, halfpage handbook, halfpage Cre fT (GHz) (pF) 6 0.8 4 0.4 2 0 0 4 0 8 12 VCB (V) 10 1 16 IC = 0; f = 1 MHz. VCE = 12 V; f = 1 GHz. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. Rev. 04 - 2 October 2007 IC (mA) 102 Transition frequency as a function of collector current. 5 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor MLD799 BFQ591 gain 10 gain (dB) 20 (dB) 8 15 6 25 handbook, halfpage MLD800 handbook, halfpage MSG GUM Gmax GUM 10 4 5 2 0 0 0 40 80 IC (mA) 40 0 120 VCE = 12 V; f = 900 MHz. VCE = 12 V; f = 2 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. 80 IC (mA) 120 Gain as a function of collector current; typical values. MLD801 40 handbook, halfpage gain (dB) 30 MSG 20 GUM Gmax 10 MSG 0 10 102 103 f (MHz) 104 IC = 70 mA; VCE = 12 V. Fig.8 Gain as a function of frequency; typical values. Rev. 04 - 2 October 2007 6 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor MLD802 -30 BFQ591 MLD803 -30 d2 handbook, halfpage handbook, halfpage dim (dB) (dB) -40 -40 -50 -50 -60 -60 -70 -70 -80 0 40 80 IC (mA) 120 0 40 80 IC (mA) 120 Vo = 700 mV; VCE = 12 V; Tamb = 25 C; f(p+q+r) = 793.25 MHz. Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz. Fig.9 Fig.10 Second order intermodulation distortion as function of collector current; typical values. Intermodulation distortion as function of collector current; typical values. Rev. 04 - 2 October 2007 7 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 SPICE parameters for the BFQ591 die. SEQUENCE No. PARAMETER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJ TR CJS VJS MJS FC 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 VALUE 1.341 123.5 .988 75.85 9.656 232.2 2.134 10.22 1.016 1.992 294.1 211.0 997.2 5.00 1.000 5.00 1.275 920.6 0.000 1.110 3.000 3.821 600.0 348.5 13.60 71.73 10.28 1.929 0.000 1.409 219.4 166.5 2.340 543.7 0.000 750.0 0.000 733.2 UNIT fA - - V mA fA - - - V mA aA - A - eV - pF mV - ps - V mA deg fF mV - - ps F mV - - C cb handbook, halfpage L1 LB B L2 B' C' E' C be C Cce LE MBC964 L3 E QLB = 50;QLE = 50;QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz. Fig.11 Package equivalent circuit SOT89. List of components (see Fig.11) DESIGNATION VALUE UNIT Cbe 16 fF Ccb 150 fF Cce 150 fF L1 1 nH L2 0.01 nH L3 1 nH LB 1.2 nH LE 1.2 nH Note 1. These parameters have not been extracted, the default values are shown. Rev. 04 - 2 October 2007 8 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC JEITA TO-243 SC-62 Rev. 04 - 2 October 2007 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 9 of 11 BFQ591 NXP Semiconductors NPN 7 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 2 October 2007 10 of 11 BFQ591 NXP Semiconductors NPN 7 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFQ591_N_4 20071002 Product data sheet - BFQ591_3 Modifications: * Fig. 1 and package outline updated BFQ591_3 20020204 Product specification BFQ591_N_2 (9397 750 09252) 20020102 Preliminary specification BFQ591_N_1 (9397 750 09013) 20011203 Preliminary specification - BFQ591_N_2 BFQ591_N_1 - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 October 2007 Document identifier: BFQ591_N_4