60
N-Channel Enhancement Mode Field Effect Transistor
March 1998
FEATURES
60V , 0.4A , R
DS(ON)
=2 @V
GS
=10V.
High dense cell design for low R
DS(ON)
.
Rugged and reliable.
TO-92 Package.
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS V
Gate-Source Voltage VGS Ć20 V
Drain Current-Continuous @T
J
=125 C
-Pulsed
ID400
2000
400
400
mA
mA
mA
mW
IDM
Drain-Source Diode Forward Current IS
Maximum Power Dissipation PD
Operating Junction and Storage
Temperature Range TJ,TSTG -55 to 150 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient RįJA 313 /W
C
Ω
R
DS(ON)
=3 @V
GS
=5V.
Ω
CEK7000A
a
a
a
a
b
TO-92
SGDS
G
D
9-2
9
CEK7000A
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS =
VGS 0V, ID10µA
=60 V
Zero Gate Voltage Drain Current IDSS VDS 60V, VGS 0V
== 1µA
Gate-Body Leakage IGSS VGS
ȀȀ
20V, VDS 0V
==
Ȁ
100 nA
ON CHARACTERISTICSb
Gate Threshold Voltage VGS(th) VDS VGS,ID= 250µA
=1 2.0 2.5 V
Drain-Source On-State Resistance RDS(ON) VGS 10V, ID500mA 1.4 2.0 Ω
VGS 5V, ID75mA 2.3 3.0 Ω
On-State Drain Current ID(ON) VDS =7V,VGS = 10V 500 19080 mA
mSForward Transconductance FS
gVDS 7V, ID200mA
DYNAMIC CHARACTERISTICSc
Input Capacitance CISS
CRSS
COSS
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, VGS =0V
f =1.0MHZ
37 PF
28 PF
PF
12
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD =30V,
ID= 200mA,
VGEN =10V,
RGEN =25
Ω
25 30 ns
ns
ns
ns
15 20
75 100
10 20
C
Fall Time
=
=
=
=
==
9-3
9
ĆĆ
Parameter Symbol Condition Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage V
SD VGS = 0V, Is = 11.5mA 1.50.7 V
b
Notes
c.Guaranteed by design, not subject to production testing.
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
VDS, Drain-to Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID, Drain Current(A)
C, Capacitance (pF)
Drain-Source, On-Resistance ID, Drain Current (A)
ID, Drain Current (A)
ś ś
ś
9-4
9
RDS(ON), Normalized
CEK7000A
2.5
2.0
1.5
1.0
0.5
0012345 6
9V 8V
7V
6V
4V
3V
5V
VGS=10V
3.0
2.5
2.0
25 C
Tj=125 C
-55 C
1.5
1.0
0.5
00 0.4 0.8 1.2 1.6
VGS=10V
-55 C
2.0
1.6
1.2
0.8
0.4
00.0 1.0 2.0 3.0 4.0 5.0 6.0
25 C
VDS=10V
Tj=125 C
Ciss
Coss
Crss
60
50
40
30
20
10
001052015 3025
Figure 5. Gate Threshold Variation
with Temperature Figure 6. Breakdown Voltage Variation
with Temperature
Vth, Normalized
Gate-Source Threshold Voltage
gFS, Transconductance (S)
BVDSS, Normalized
Drain-Source Breakdown Voltage
Is, Source-drain current (A)
with Drain Current
IDS, Drain-Source Current (A)
Figure 10. Maximum Safe
Operating Area
VDS, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VSD, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C) Tj, Junction Temperature ( C)
ID, Drain Current (A)
9-5
9
40.0
10.0
1.00.4 0.6 0.8 1.0 1.2 1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4-50 -25 0 25 50 75 100 125 150
VDS=VGS
ID=1mA
0.3
0.15
00 0.1 0.2 0.3 0.4
VDS=7V
3
2
1
0.1
0.01 0.1 10 60 80
R
DS
(ON) Limit
V
GS
=10V
Single Pulse
T
A
=25 C
DC
1ms
10ms
100ms
1s
VGS, Gate to Source Voltage (V)
Figure 7. Transconductance Variation
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
=25V
I
D
=0.115A
CEK7000A
-50 -25 0 25 50 75 100 125 150
1.20
1.15
1.10
1.05
1.00
0.95
0.90
ID=250ijA
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
t
V
V
tt
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
Transient Thermal Impedance
1
0.5
0.2
0.1
0.05
0.01
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized Effective
9-6
9
CEK7000A
INVERTED
1010.10.010.0010.0001 100
PDM
t1t2
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA=PDM*R
įJA (t)
4. Duty Cycle, D=t1/t2
D=0.5
0.2
0.1
0.05
0.02
0.01 Single pulse
VDD
R
D
V
VR
S
V
G
GS
IN
GEN
OUT
L
