DATA SHEET NEC / SILICON SWITCHING DIODES 1$$222,1SS223 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters @ Low capacitance: C,=4.0 pF MAX. @ High speed switching: t,,=3.0 ns MAX. 3 2.8+0.2 @ Wide applications including switching, limitter, clipper. oF 1.5 0.65434 g] ee | am ABSOLUTE MAXIMUM RATINGS ~ ip +t Maximum Voltages and Currents (Tg= 25 C) g ae 188222 188223 a 3 1 3 4 Peak Reverse Voltage Vam 70 100 Vv i [IL a DC Reverse Voltage Vea 70 100 Vv Peak Forward Current lem 300 300 mA Average Rectified Current lo 100 100 mA m Marking DC Forward Current if 100 100 mA ls 3 Maximum Temperatures . >+ | g Junction Temperature T; 150 C 2 | | oP Storage Temperature Range Tstg 55 to +150 C ~ Thermal Resistance Connection Diagram 9 . . (Top View! b| Junction to Ambient Reh (-a) 0.67 C/mW Cathode ae C3 Marking : A7 Anode N.C. ELECTRICAL CHARACTERISTICS (Tg =25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Veq 720 850 mv {ep =10 mA Forward Voltage VeEQ 850 1000 mV lp =50 mA VE3 950 1200 mv Ip = 100 mA Reverse Current Ip 188222 10 HA Var 70v . 18$223 1.0 uA VR =100 V Capacitance Cy 2.0 4.0 pF VR=0, f=1.0 MHz Reverse Recovery Time ter 3.0 ns IF Le 100 a ce Tost Circuit. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16319EJ3VODS00 (3rd edition) (Previous No. DC-1057A) Date Published July 2002 N CP(K} ; Printed in Japan NEC Corporation 1985 NEC TYPICAL CHARACTERISTICS (T, = 25 C) \p~Forward Current~mA AVpForward Voltage Temperature Coefficient ~mV/C FORWARD CURRENT vs. FORWARD VOLTAGE 1000 500. 200 100 50 20 10 5.0 20 10 05 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 08 Ve Forward VoltageV iypReverse Current pA 0 0 0 1.0 1.2 FORWARD VOLTAGE TEMPERATURE COEFFICIENT vs FORWARD CURRENT 3.0 | Cy-Terminal CapacitancepF ol Li 0.1 02 05 10 2.0 6.0 10 20 Ip Forward CurrentmA 60 100 Data Sheet D16319EJ3VODS 1$$222,1SS223 REVERSE CURRENT vs. REVERSE VOLTAGE 10 5.0 2.0 1.0 05 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0005 0002 0001 0 Ta=io00 C 10 20 30 40 50 60 70 VpReverse VoltageV TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 3.0 f=1.0 MHz Tg=25 C N a | 1 2 4 6 810 20 6030 VpReverse VoltageV NEC 1$$222,1SS223 SWITCHING CHARACTERISTICS TEST CIRCUIT Reverse recovery time : ter Circult Capacitance C<1 pF a ee t tp r + r lr=10 mA [ 7s _ | 9 t Rg@=50 2 : | sampling 10 % iF | t tpS0.6 ns pulse | F oscilloscope tp+100 ns Generator Loupe. Rj=50 2 6 { Duty Cycles % t, $0.35 ns 90% | J VR inp =O.1 Ip V=VetVe input signal ~ output signal Test circuit Wave forms lp =10 mA, Vr =6.0V Data Sheet D16319EJ3VODS NEC 1$$222,1S$223 The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. 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