SB01W05C
No.2995-1/3
Applications
•High frequency rectification (switching regulators, converters, choppers).
Features
•Low forward voltage (VF max=0.55V).
•Fast reverse recorvery time (trr max=10ns).
•Low switching noise.
•Low leakage current and high reliability due to highly reliable planar structure.
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 50 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 55 V
Average Output Current IO100 mA
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 2 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C (Value per element)
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=50μA50V
Forward Voltage VFIF=100mA 0.55 V
Reverse Current IRVR=25V 15 μA
Interterminal Capacitance C VR=10V, f=1MHz 4.4 pF
Marking : M Continued on next page.
www.semiconductor-sanyo.com/network
Ordering number : EN2995B
31710SB TK IM / 33098HA (KT)/72696GI (KOTO)/1269TA, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
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SANYO Semiconductors
DATA SHEET
SB01W05C Schottky Barrier Diode (Twin Type • Cathode Common)
50V, 100mA Rectifier
SB01W05C
No.2995-2/3
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Recovery Time trr IF=IR=10mA, See specified Test Circuit. 10 ns
Rth(j-a)1 560 °C / W
Thermal Resistance Rth(j-a)2 Mounted on Cu-foild area of 16mm2✕0.2mm 410 °C / W
on glass epoxy board
Package Dimensions Electrical Connection
unit : mm (typ)
7013A-006
trr Test Circuit
IR -- VR
IF -- VF
Forward Voltage, VF -- V
Forward Current, IF -- mA
Reverse Voltage, VR -- V
Reverse Current, IR -- μA
10 20 30 40 50 60 70
2
5
2
5
2
5
2
5
1000
100
10
1.0
2
5
0.1
0.01 0
ID00253
0.2 0.3 0.4 0.5 0.70.60.10
ID00252
Ta=
125
°C
100°C
25°C
50
°
C
75
°
C
7
5
2
2
1.0
10
3
7
5
100
3
7
5
2
3
5
Ta=
125
°C
25°C
3
12
1 : Anode
2 : Anode
3 : Cathode
Top view
1 : Anode
2 : Anode
3 : Cathode
SANYO : CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
Duty≤10%
50Ω100Ω10Ω
5V trr
10μs
10mA10mA
1mA
SB01W05C
No.2995-3/3
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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controlled under any of applicable local export control laws and regulations, such products may require the
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
IFSM -- t
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
C -- VR
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
2
1.0
10
3
7
5
2
3
7
5
23 57
1.0 10 23 57
100 21.0
3235720.1
357
0.01
7
ID00254
0
0.4
0.8
2.0
2.4
1.2
1.6
2.8
ID00255
f=1MHz
IS
20ms
t
Current waveform 50Hz sine wave
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
