1
Item Symbol Rating Unit
Drain-source voltage V DS 800
Continuous drain current ID±7
Pulsed drain current ID(puls] ±28
Gate-source voltage VGS ±35
Maximum Avalanche Energy EAV *1 378.3
Max. power dissipation PD60
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3264-01MR FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=800V
VGS=±35V
ID=3.5A VGS=10V
ID=3.5A VDS=25V
VCC=600V ID=7A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
A
V
ns
µC
ns
Min. T yp. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 2.083
62.5 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA V GS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=14.2mH Tch=25°C
IF=2xID VGS=0V Tch=25°C
IF=ID VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=14.2mH, Vcc=80V
800
3.5 4.0 4.5
10 500
0.2 1.0
10 100
1.62 2.0
2.0 4.0
900 1350
130 200
70 110
25 40
90 140
80 120
50 80
71.0 1.5
900
10
-55 to +150
TO-220F15
3. Source
2.54
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±30V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
2
Characteristics
2SK3264-01MR
FUJI POWER MOSFET
Typical Drain-Source on state resistance vs. ID
RDS(on)=f(ID):80µs pulse test, Tch=25°C
RDS(on)
[ Ω ]
0 5 10 15 20
15
10
5
0
VGS=
5V
0 10203040
0
5
10
15
20
5V
5.5V
7V
6.5V
6V
8V
10V
VGS=20V
VDS [V]
ID [A]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25oC
-50 0 50 100 150
0
2
4
6
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=3.5A,VGS=10V
RDS(on) [ Ω ]
Tch [oC ]
012345678910
10-2
10-1
100
101
Typical transfer characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25oC
ID [A]
VGS [V]
10-1 100101
10-1
100
101
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25oC
gfs [s]
ID [A] -50 0 50 100 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
min.
typ.
max.
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
VGS(th) [V]
Tch [ oC ]
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3
FUJI POWER MOSFET 2SK3264-01MR
10-2 10-1 100101102
10p
100p
1n
10n
Crss
Coss
Ciss
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
0 20 40 60 80 100 120 140 160
0
100
200
300
400
500
600
700
800
Vcc=160V
400V
640V
160V
400V
Vcc=640V
VGS [V]
VDS [V]
Typical gate charge characteristic
VGS=f(Qg):ID=7A,Tc=25oC
Qg [nC]
0
5
10
15
20
25
30
35
40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-2
10-1
100
101
Tch=25oC typ.
Forward characteristic of reverse of diode
IF=f(VSD):80µs pules test,VGS=0V
IF [A]
VSD [V] 0 50 100 150
0
10
20
30
40
50
60
70
Power Dissipation
PD=f(Tc)
PD [W]
Tc [ oC ]
100101102103
10-2
10-1
100
101
102
Safe operating area
ID=f(VDS):D=0.01,Tc=25oC
DC
VDS [V]
ID [A]
t=1µs
100ms
10ms
1ms
100µs
10µs
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Therm al Impedance
Zth(ch-c)=f(t):D=t/T
0
0.01
0.02
0.05
0.1
0.2
D=0.5
Zth(ch-c) [
oC/W]
t [sec]
保守移行機種
Not recommend for new design.
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4
FUJI POWER MOSFET 2SK3264-01MR
0 50 100 150
0
100
200
300
400
Avalanche energy derating
Eas=f(starting Tch):Vcc=80V,IAV=7A
Eas [mJ]
Starting Tch [ oC ]
保守移行機種
Not recommend for new design.
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