2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source Equivalent circuit schematic Drain(D) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 800 7 28 35 378.3 60 +150 -55 to +150 Unit V A A V mJ W C C Gate(G) Source(S) . de n sig ew n for *1 L=14.2mH, Vcc=80V nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage ot N Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) o c e r IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=35V VDS=0V ID=3.5A VGS=10V 800 3.5 Tch=25C Tch=125C ID=3.5A VDS=25V VDS =25V VGS=0V f=1MHz 2.0 VCC=600V ID=7A VGS=10V RGS=10 L=14.2mH Tch=25C IF=2xID VGS=0V Tch=25C IF=ID VGS=0V -di/dt=100A/s Tch=25C Typ. Max. Units 4.0 4.5 10 500 0.2 1.0 10 100 1.62 2.0 4.0 900 1350 130 200 70 110 25 40 90 140 80 120 50 80 7 1.0 900 10 1.5 V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 2.083 62.5 C/W C/W 1 2SK3264-01MR FUJI POWER MOSFET Characteristics Typical output characteristics Drain-source on-state resistance RDS(on)=f(Tch):ID=3.5A,VGS=10V o ID=f(VDS):80s pulse test,Tc=25 C 6 20 VGS=20V 10V 15 4 RDS(on) [ ] ID [A] 8V 10 max. typ. 2 7V 5 6.5V 6V 5.5V 5V 0 0 10 20 0 30 -50 40 0 50 100 150 o VDS [V] Tch [ C ] Typical Drain-Source on state resistance vs. ID Typical transfer characteristic RDS(on)=f(ID):80s pulse test, Tch=25C o ID=f(VGS):80s pulse test,VDS=25V,Tch=25 C 15 VGS= 5V 10 1 ID [A] 10 [] n sig ew n for 0 e m m nd -1 10 -2 10 0 1 2 3 ot 4 N 5 VGS [V] o c e r 6 7 8 9 . de 10 RDS(on) 5 10 0 0 5 Typical forward transconductance 10 15 20 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS o gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 6.0 5.0 1 10 max. gfs [s] VGS(th) [V] 4.0 typ. min. 3.0 0 10 2.0 1.0 -1 10 10-1 0 0.0 1 10 10 -50 ID [A] 0 50 100 150 o Tch [ C ] http://store.iiic.cc/ 2 2SK3264-01MR FUJI POWER MOSFET Typical gate charge characteristic Typical capacitances C=f(VDS):VGS=0V,f=1MHz o VGS=f(Qg):ID=7A,Tc=25 C 40 800 10n 700 0V 16 V c= 400 V 0 Vc 64 Vcc=640V 600 35 30 Ciss C [F] Coss 500 25 400V 400 20 300 15 200160V 10 100 5 VGS [V] VDS [V] 1n 100p Crss 10p -2 10 -1 10 10 0 1 0 2 10 10 0 20 40 60 80 100 120 0 160 140 Qg [nC] VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80 s pules test,VGS=0V Power Dissipation PD=f(Tc) 70 60 10 1 o Tch=25 C typ. 10 0 PD [W] IF [A] 10 n sig ew n for 40 10 e m m . de 50 30 nd -1 -2 0.0 0.2 0.4 t 0.6 0.8 No VSD [V] o c e r 1.0 1.2 20 10 0 1.4 0 50 100 150 o Tc [ C ] Safe operating area o ID=f(VDS):D=0.01,Tc=25 C 2 10 Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T 10 1 1 10 -1 10s 100s ID [A] 10 t=1s DC D=0.5 0.2 0.1 o Zth(ch-c) [ C/W] 10 0 0.05 0.02 0.01 0 10 1ms 10ms 10 -2 0 -1 10 100ms 10 -3 10 -6 10 -5 10 -4 10 -3 t [sec] 10 -2 10 -1 10 0 -2 10 10 0 1 10 2 10 10 3 VDS [V] http://store.iiic.cc/ 3 2SK3264-01MR FUJI POWER MOSFET Avalanche energy derating Eas=f(starting Tch):Vcc=80V,IAV=7A 400 Eas [mJ] 300 200 100 0 0 50 100 150 o Starting Tch [ C ] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4