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IPN = 50 .. 600 A
Features
• Hall effect measuring principle
•Galvanic isolation between primary
and secondary circuit
• Isolation voltage 3000V
• Low power consumption
• Extended measuring range(3 x IPN)
• Isolated plastic case recognized
according to UL 94-V0
Advantages
• Easy installation
• Small size and space saving
• Only one design for wide current
ratings range
• High immunity to external
interference
Applications
• AC variable speed drives
• DC motor drives
• Battery supplied applications
• Uninterruptable Power Supplies
(UPS)
• Switched Mode Power Supplies
(SMPS)
• Power supplies for welding
applications.
Application domain
• Industrial
Current Transducer HAL 50..600-S
For the electronic measurement of currents: DC, AC, pulsed...,
with galvanic isolation between the primary circuit (high power) and
the secondary circuit (electronic circuit).
Electrical data
Primary nominal Primary current Type RoHS since
current rms measuring range 4) date code
IPN (A) IPM (A)
50 ± 150 HAL 50-S 46180
100 ± 300 HAL 100-S 46065
200 ± 600 HAL 200-S 46090
300 ± 900 HAL 300-S 46142
400 ± 1000 HAL 400-S 46114
500 ± 1000 HAL 500-S 46306
600 ± 1000 HAL 600-S 46059
IP Overload Capability (Ampere Turns) 30,000 A
VOUT Output voltage (Analog) @ ± IPN ± 4 V
RL Load resistance @ TA = 0 .. + 70°C > 1 kΩ
@ TA = - 25 .. + 85°C > 3 kΩ
VC Supply voltage (± 5 %) ± 15 V
IC Current consumption < ± 25 mA
Vb Rated isolation voltage rms1) 500 V
Vd Rms voltage for AC isolation test, 50 Hz, 1 min 3 kV
Ris Isolation resistance @ 500 VDC > 500 MΩ
Accuracy - Dynamic performance data
X Accuracy @ IPN , TA = 25°C, ± 15 V < ± 1 %
eL Linearity error2) < ± 0.5 % of IPN
VOE Eletrical offset voltage @ TA = 25°C HAL 50-S < ± 20 mV
HAL 100..600-S < ± 10 mV
VOM Magnetic offset voltage @ IP = 0,
after an overload of 3 x IPN HAL 50-S < ± 30 mV
HAL 100..200-S < ± 20 mV
HAL 300..600-S < ± 10 mV
TCVOE Temperature coefcient of VOE HAL 50-S < ± 2.0 mV/K
HAL 100..600-S < ± 1.0 mV/K
TCVOUT Temperature coefcient of VOUT ( % of reading ) ≤ ± 0.05 %/K
tr Response time to 90% of IPN step ≤ 3 µs
BW Frequency bandwidth (- 3 dB)3) DC .. 50 kHz
General data
TA Ambient operating temperature - 25 .. + 85 °C
TS Ambient storage temperature - 25 .. + 85 °C
m Mass app. 75 g
Standard4) Safety EN 50178 : 1994
EMC EN50082-2: 1992
EN50081-1: 1992
Deviation in output when tested to EN 61000-4-6 < 20 % of IPN
Deviation in output when tested to EN 61000-4-3 < 20 % of IPN
Notes : 1) Overvoltage Category III, Pollution Degree 2
2) Excludes the electrical offset
3) Derating is needed to avoid excessive core heating at high frequency.
4) Please consult characterisation report for more technical details and
application advice.