V
RRM
= 45 V - 100 V
I
F(AV)
= 400 A
Features
• High Surge Capability Twin Tower Package
• Not ESD Sensitive
Parameter Symbol MBR40045CT(R) MBR40060CT(R) Unit
Repetitive peak reverse
V
45
60
V
MBR40045CT thru MBR400100CTR
MBR400100CT(R)
80
MBR40080CT(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
Conditions
100
• Types from 45 V to 100 V V
RRM
voltage
V
RRM
45
60
V
RMS reverse voltage V
RMS
32 42 V
DC blocking voltage V
DC
45 60 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MBR40045CT(R) MBR40060CT(R) Unit
A
verage forward current
(per pkg) I
F(AV)
400 400 A
Maximum forward
voltage (per leg) 0.70 0.75
11
10 10
50 50
Thermal characteristics
Thermal resistance,
junction-case,
per leg
R
ΘJC
0.35 0.35 °C/W
Reverse current at rated
DC blocking voltage
(per leg)
I
R
V
F
V
T
j
= 100 °C 10 10 mA
50
A
T
j
= 25 °C
I
FM
= 200 A, T
j
= 25 °C
Conditions
80
57
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
11
MBR40080CT(R)
0.35
T
j
= 150 °C
0.35
0.84 0.84
50
-55 to 150 -55 to 150
100
70
10080
-55 to 150
T
C
= 125 °C 400 400
Peak forward surge
current (per leg) I
FSM
t
p
= 8.3 ms, half sine 3000 3000 3000 3000
MBR400100CT(R)
Rev 1.1 Feb 2018 Latest version at: www.genesicsemi.com/silicon_rectifiers/schottky/
1
MBR40045CT thru MBR400100CTR
Rev 1.1 Feb 2018 Latest version at: www.genesicsemi.com/silicon_rectifiers/schottky/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR40045CT thru MBR400100CTR
Rev 1.1 Feb 2018 Latest version at: www.genesicsemi.com/silicon_rectifiers/schottky/
3
