TC7S66F/FU
2009-09-30
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7S66F,TC7S66FU
Bilateral Switch
The TC7S66 is a high Speed C2MOS Bilateral Switch fabricated
with silicon gate C2MOS technology.
It consists of a high speed switch capable of controlling either
digital or analog signals while maintaining the C2MOS low power
dissipation.
Control input (C) is provided to control the switch.
The switch turns ON while the C input is high, and the switch
turns OFF while low.
Input is equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: tpd = 7 ns (typ.) @VCC = 5 V
Low power dissipation: ICC = 1 μA (max) @Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Low ON resistance: RON = 100 Ω (typ.) @VCC = 9 V
Low T.H.D: THD = 0.05% (typ.) @VCC = 5 V
Pin and function compatible with TC4S66F
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
DC Supply voltage VCC 0.5 to 13 V
Control input voltage VIN 0.5 to VCC + 0.5 V
Switch I/O voltage VI/O 0.5 to VCC + 0.5 V
Control diode current ICK ±20 mA
Output diode current IOK ±20 mA
Through I/O current IT ±12.5 mA
DC VCC/ground current ICC ±25 mA
Power dissipation PD 200 mW
Storage temperature range Tstg 65 to 150 °C
Lead temperature (10 s) TL 260 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TC7S66F
TC7S66FU
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
TC7S66F/FU
2009-09-30
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Marking Pin Configuration (top view)
Logic Diagram Truth Table
Control Switch Function
H ON
L OFF
Operating Ranges
Characteristics Symbol Rating Unit
Supply voltage VCC 2 to 12 V
Control input voltage VIN 0 to VCC V
Switch I/O voltage VI/O 0 to VCC V
Operating temperature range Topr 40 to 85 °C
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
0 to 400 (VCC = 6.0 V)
Input rise and fall time tr, tf
0 to 250 (VCC = 10.0 V)
ns
Part No.
E 9
1
IN/OUT
2
OUT/IN
3
GND
VCC
5
CONT
4
C
I/O O/I
×1
I I
TC7S66F/FU
2009-09-30
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Electrical Characteristics
DC Electrical Characteristics
Ta = 25°C Ta = 40
to 85°C
Characteristics Symbol Test Condition
VCC (V) Min Typ. Max Min Max
Unit
2.0 1.5 1.5
4.5 3.15 3.15
9.0 6.3 6.3
High level VIHC
12.0 8.4 8.4
2.0 0.5 0.5
4.5 1.35 1.35
9.0 2.7 2.7
Control input
voltage
Low level VILC
12.0 3.6 3.6
V
4.5 192 340 400
9.0 110 170 200
VIN = VIHC
VI/O = VCC to GND
VI/O
<
=
1 mA 12.0 90 160 180
2.0 320
4.5 140 200 260
9.0 100 150 190
ON resistance RON
VIN = VIHC
VI/O = VCC or GND
VI/O
<
=
1 mA
12.0 90 140 180
Ω
Input/output leakage
current (switch off) IOFF
VOS = VCC or GND
VIS = GND or VCC
VIN = VILC
12.0 ±100 ±1000 nA
Switch input leakage
current
(switch on, output open)
IIZ VOS = VCC or GND
VIN = VIHC 12.0 ±100 ±1000 nA
Control input current IIN V
IN = VCC or GND 12.0 ±100 ±1000 nA
6.0 1.0 10.0
9.0 4.0 40.0
Quiescent device current ICC V
IN = VCC or GND
12.0 8.0 80.0
μA
TC7S66F/FU
2009-09-30
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AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns)
Ta = 25°C Ta = 40
to 85°C
Characteristics Symbol Test Condition
VCC (V) Min Typ. Max Min Max
Unit
2.0 20 75 100
4.5 7 15 20
9.0 4 12 15
Phase difference between
input and output φI-O
12.0 4 11 14
ns
2.0 20 150 190
4.5 13 30 38
9.0 9 18 33
Output enable time tpZL
tpZH RL = 1 kΩ
12.0 8 18 27
ns
2.0 40 170 220
4.5 11 35 44
9.0 10 30 38
Output disable time tpLZ
tpHZ RL = 1 kΩ
12.0 9 27 33
ns
2.0 30
4.5 30
9.0 30
Maximum control input
frequency
RL = 1 kΩ
CL = 15 pF
VOUT = 1/2 VCC
12.0 30
MHz
Control input capacitance CIN 5 10 10
Switch terminal
capacitance CI/O 6 pF
Feedthrough capacitance CIOS 0.5
Power dissipation
capacitance CPD (Note) 15
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD • VCC • fIN + ICC
Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note)
Characteristics Symbol Test Condition
VCC (V)
Typ. Unit
4.5 0.05
Total harmonic distortion (T.H.D)
fIN = 1 kHz, VIN = 4 Vpp (VCC = 4.5 V)
RL = 10 kΩ, VIN = 8 Vpp (VCC = 9.0 V)
CL = 50 pF 9.0 0.04
%
4.5 200
Maximum propagation frequency
(switch on) fMAX
Adjust fIN voltage to obtain 0dBm at VOS
increase fIN frequency until dB meter reads
3dB.
RL = 50 Ω, CL = 10 pF
fIN = 1 MHz, Sine wave 9.0 200
MHz
4.5 60
Feedthrough (switch on)
VIN is centered at VCC/2 adjust input for 0dBm
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, Sine wave 9.0 60
dB
4.5 60
Crosstalk (control switch) RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, Pulse (tr = tf = 6 ns) 9.0 100
mV
Note: These characteristics are determined by design of devices.
TC7S66F/FU
2009-09-30
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Package Dimensions
Weight: 0.016 g (typ.)
TC7S66F/FU
2009-09-30
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Package Dimensions
Weight: 0.006 g (typ.)
TC7S66F/FU
2009-09-30
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