European Power-
Semiconductor and
Electronics Company
VWK Sep. 1996
Marketing Information
DD B6U 144 N 10...16
(ECONO)
104,8
80
80
70,4
60,96
15,24 5,5
3,81
1 1 , 4 3 57,15
max. 107,5
93±0,2
P+ 13
P+ 16
N- 14
N- 17
R 1-4
S 5-8
T 9-12
N- N-P+ P+
R S T
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DD B6U 144 N 10...16 (ECONO)
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
T
vj
= - 40°C...T
vj max
V
RRM
1000, 1200
V
1400, 1600
V
Stoßspitzensperrspannung
T
vj
= + 25°C...T
vj max
V
RSM
1100, 1300
V
non-repetitive peak reverse voltage
1500, 1700
V
Durchlaßstrom-Grenzeffektivwert (pro Element)
I
FRMSM
100
A
RMS forward current (per chip)
Ausgangsstrom
T
C
= 100°C
Id
145
A
output current
T
C
= 84°C
173
A
T
A
= 45°C, KP 0,5 S
71
A
T
A
= 45°C, KP 0,33 S
97
A
T
A
= 35°C, KP 0,41 S (V
L
= 45l/s)
153
A
T
A
= 35°C, KP 0,33 S (V
L
= 90l/s)
173
A
Stoßstrom-Grenzwert
T
vj
= 25°C, t
p
= 10ms
IFSM
1200
A
surge forward current
T
vj
= T
vj max
, t
p
= 10ms
1000
A
Grenzlastintegral
T
vj
= 25°C, t
p
= 10ms
I²t
7200
A²s
I²t-value
T
vj
= T
vj max
, t
p
= 10ms
5000
A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
T
vj
= T
vj max
, i
F
= 150A
v
F
max.
1,65
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,75
V
Ersatzwiderstand
forward slope resistance
T
vj
= T
vj max
rT
3,1
m
Ω
Sperrstrom
reverse current
T
vj
= T
vj max,
v
R =
V
RRM
i
R
max.
5
mA
Isolations-Prüfspannung
RMS, f = 50Hz, t = 1min
V
ISOL
2,5
kV
insulation test voltage
RMS, f = 50Hz, t = 1sec
3,0
kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
pro Modul / per module, Θ = 120°rect
R
thJC
max.
0,148
°C/W
thermal resistance, junction to case
pro Element / per chip, Θ = 120°rect
max.
0,890
°C/W
pro Modul / per module, DC
max.
0,167
°C/W
pro Element / per chip, DC
max.
0,700
°C/W
Übergangs-Wärmewiderstand
pro Modul / per module
R
thCK
max.
0,033
°C/W
thermal resistance, case to heatsink
pro Element / per chip
max.
0,200
°C/W
Höchstzul. Sperrschichttemp.
max. junction temperature
T
vj max
150
°C
Betriebstemperatur
operating temperature
T
c op
- 40...+150
°C
Lagertemperatur
storage temperature
T
stg
- 40...+150
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage case, see appendix
Si-Elemente mit Lötkontakt, glaspassiviert
Si-pellets with soldered contact, glass-passivated
Innere Isolation internal insulation Al2O3
Drehmom.f.mech. Befest. mounting torque Toleranz / tolerance ±15% M1 4 Nm
Drehmom. f. el. Anschlüsse terminal connection torque G
typ.
185 g
Gewicht weight 12,5 mm
Kriechstrecke creepage distance f = 50Hz 50 m/s²
Schwingfestigkeit vibration resistance f = 50Hz 50 m/s²
Kühlkörper / heatsinks :
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DD B6U 144 N 10...16
Pos. n
R
thn [ ° C / W ]
τ
n [ s ]
Analytische Elemente des transienten Wärmewiderstandes ZthJC pro Zweig für DC
Analytical elements of transient thermal impedance ZthJC per arm for DC
Analytische Funktion / Analytical function:
nmax
Σ
n=1
ZthJC = Rthn (1-e )
t
- τn
1 2 3 4
0,35500 0,24500 0,04100 0,05500
0,30200 0,03780 0,00900 0,00109
DD B6U 144 N 10...16 / 2
0,8
0,6
0,4
0,2
0
ZthJC
[°C/W]
t [s]
10-3 10-2 10-1 100 101
2 3 4 6 2 3 4 6 2 3 4 6 2 3 4 6
Bild / Fig. 2
Transienter innerer Wär mew i der s tand je Zwe ig / T r a n s i e n t t h e r m a l
impedance per arm
ZthJC = f(t)
Parameter: Stromflußwinkel / current conduction angle θ
12 0 ° r e c t
DC
DD B6U 144 N 10...16 / 1 Id [A]
Bild / Fig. 1
Höchstzulässige Gehäusetemperatur / Maximum allowaböe case temperatur
TC = f(Id)
160
140
120
100
80
60
40
20
0 20 40 60 80 1000
TC
[°C]
120 140 160 180
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