A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
VBR IR = 10 µA4.0 V
VFIF = 1.0 mA 500 mV
RDIF = 5.0 mA 18 ΩΩ
CTVR = 0 V f = 1.0 MHz 0.15 pF
NF
∆∆NF
ZIF
∆∆ZIF
I
F
= 30 MHz f = 9.375 GHz
PLO = 0 dBm
NIF = 1.5 dB DC Load = 0 Ω200
7.2
±0.3
400
25
dB
dB
ΩΩ
ΩΩ
BEAM LEAD SCHOTTKY DIODE
BATCH MATCHED
HSCH5315
DESCRIPTION:
The HSCH5315 is a Medium Barrier
Beam Lead Schottky Diode Designed
for X-Band Mixer Applications that is
Batch Matched for NF and ZIF.
MAXIMUM RATINGS
IF25 mA
VR4.0 V
PDISS 300 mW @ TA = 25 OC
TJ-65 OC to +175 OC
TSTG -65 OC to +200 OC
PACKAGE STYLE BL1
ORDER CODE: ASI30264
