SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 1200 V Tc = 25 C 232 A Tc = 80 C 179 A 150 A ICnom ICRM SEMiX(R)1s tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 ... 20 V 10 s -40 ... 175 C Tc = 25 C 189 A Tc = 80 C 141 A 150 A 450 A VGES VCC = 800 V VGE 20 V Tj = 150 C VCES 1200 V Tj Inverse diode IF SEMiX151GB12T4s Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180, Tj = 25 C A -40 ... 175 Tj C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 60 s 600 A -40 ... 125 C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 C 1.8 2.05 V Tj = 150 C 2.20 2.4 V Tj = 25 C 0.8 0.9 V Tj = 150 C 0.7 0.8 V Tj = 25 C 6.7 7.7 m 10.0 10.7 m 5.8 6.5 V 0.1 0.3 mA IGBT Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C VCE(sat) IC = 150 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 C 5 Tj = 25 C Tj = 150 C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF QG VGE = - 8 V...+ 15 V 850 nC RGint Tj = 25 C 5.00 td(on) 185 ns Eoff VCC = 600 V IC = 150 A Tj = 150 C RG on = 1 RG off = 1 di/dton = 3900 A/s di/dtoff = 2000 A/s Rth(j-c) per IGBT tr Eon td(off) tf 42 ns 16.6 mJ 410 ns 70 ns 13.8 mJ 0.19 K/W GB (c) by SEMIKRON Rev. 23 - 08.07.2008 1 SEMiX151GB12T4s Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 rF SEMiX(R)1s IRRM Qrr Trench IGBT Modules Err Rth(j-c)D min. Tj = 25 C Tj = 150 C typ. max. Unit 2.1 2.5 V 2.1 2.4 V Tj = 25 C 1.1 1.3 1.5 V Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 4.3 5.6 6.4 m 7.8 8.5 m Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 3400 A/s T = 150 C j VGE = -15 V T j = 150 C VCC = 600 V per diode 6.7 115 A 23 C 8.9 mJ 0.31 K/W Module SEMiX151GB12T4s LCE RCC'+EE' Features res., terminal-chip 16 nH TC = 25 C 0.7 m TC = 125 C 1 m * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Rth(c-s) per module Ms to heat sink (M5) 3 0.075 5 Nm Mt to terminals (M6) 2.5 5 Nm 145 g Typical Applications R100 Tc=100C (R25=5 k) 0,493 5% k * AC inverter drives * UPS * Electronic Welding B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 2% K w K/W Temperature sensor Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C GB 2 Rev. 23 - 08.07.2008 (c) by SEMIKRON SEMiX151GB12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 23 - 08.07.2008 3 SEMiX151GB12T4s Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 23 - 08.07.2008 (c) by SEMIKRON SEMiX151GB12T4s SEMiX 1s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 23 - 08.07.2008 5