All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY 1 of 9 Rev. 04, 2012-02-16
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
5
15
25
35
45
55
65
15
16
17
18
19
20
21
30 35 40 45 50 55
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz
Efficiency
Gain
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—veried by design/characterization in Inneon test xture)
VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average, ƒ1 = 760 MHz, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8.1 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps — 19 — dB
Drain Efciency hD — 25 — %
Intermodulation Distortion IMD — –39 — dBc
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 30 V, 725 – 770 MHz
Description
The PTFA072401EL and PTFA072401FL are 240-watt LDMOS
FETs designed for use in cellular power amplier applications in the
725 to 770 MHz frequency band. These devices feature internal I/O
matching and thermally-enhanced, open-cavity ceramic packages.
Manufactured with Inneon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA072401EL
Package H-33288-2
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
770 MHz, 30 V
- Average output power = 40 W
- Linear gain = 19 dB
- Efciency = 25%
- Intermodulation distortion = –39 dBc
• Typical CW performance, 770 MHz, 30 V
- Output power at P1dB = 240 W
- Efciency = 58%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Thermally-enhanced packages, Pb-free and RoHS
compliant with low gold (<0.25 micron) plating
PTFA072401FL
Package H-34288-2
Data Sheet – DRAFT ONLY 2 of 9 Rev. 04, 2012-02-16
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Inneon test xture)
VDD = 30 V, IDQ = 1800 mA, POUT = 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 18 19 — dB
Drain Efciency hD 43 45 — %
Intermodulation Distortion IMD — –29 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 1.82 — W
Operating Gate Voltage VDS = 30 V, IDQ = 1800 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ 200 °C
Total Device Dissipation PD 700 W
Above 25°C derate by 4.0 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 240 W CW) RqJC 0.28 °C/W
Ordering Information
Type and Version Order Code Package Package Description Shipping
PTFA072401EL V5 PTFA072401ELV5XWSA1 H-33288-2 Slotted ange Tray
PTFA072401FL V5 PTFA072401FLV5XWSA1 H-34288-2 Earless ange Tray
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 3 of 9 Rev. 04, 2012-02-16
-35
-30
-25
-20
-15
-10
-5
0
15
20
25
30
35
40
45
50
700 730 760 790
Input Return Loss (dB)
Gain (dB), Efficiency (%)
Frequency (MHz)
Broadband Performance
V
DD
= 30 V, I
DQ
= 1800 mA, P
OUT
= 126 W
Gain
Efficiency
Return Loss
15
20
25
30
35
40
45
50
-60
-55
-50
-45
-40
-35
-30
-25
42 44 46 48 50 52 54 56
Drain Efficiency (%)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1800 mA,
ƒ = 765 MHz, tone spacing = 1 MHz
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
15
16
17
18
19
20
21
30 35 40 45 50 55
Power Gain (dB)
Output Power (dBm)
Power Sweep
V
DD
= 30 V, ƒ = 770 MHz
I
DQ
= 1.6 A
I
DQ
= 1.8 A
I
DQ
= 1.4 A
I
DQ
= 2.2 A
I
DQ
= 2.0 A
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
10
20
30
40
50
60
30 32 34 36 38 40 42 44 46 48 50
Drain Efficiency (%)
Output Power (dBm)
Two-carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1.9 A, ƒ = 765 MHz
T
CASE
= 25°C
T
CASE
= 90°C
Efficiency
IM3
ACPR
IMD, ACPR (dBc)
Typical Performance (data taken in a production test xture)
Data Sheet – DRAFT ONLY 4 of 9 Rev. 04, 2012-02-16
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
0.1
0.3
0.5
0.2
0.4
0.1
0.3
0
.5
0.2
0.4
0.6
0.1
0.3
0.5
0
.7
0
.2
0.4
0
.6
0.
8
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
0
.05
0
.45
0
.0
5
0
.1
0
0
.4
5
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
zed to 50 Ohms
72401efl
1efl Feb. 26, 2009 3:00:22 PM
Z Load
Z Source
770 MHz
725 MHz
725 MHz
770 MHz
Z0 = 50 W
Z Source Z Load
G
S
D
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
725 2.53 –4.83 1.64 –1.54
736 2.48 –4.64 1.55 –1.48
748 2.44 –4.41 1.46 –1.33
759 2.41 –4.22 1.42 –1.17
770 2.37 –4.04 1.36 –1.11
See next page for reference circuit information
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 5 of 9 Rev. 04, 2012-02-16
VDD
R9
2K
C22
3.9pF
l 11
L2
l 12
C14
10μF
L1
R4
2K
R1
1.2K
C9
62pF
4
R8
10
DUT
J1 J2
C6
4.7μF
C5
10μF
35V
C4
0.1μF
C7
0.1μF
C8
62pF
R7
5.1K
R6
10
1
C10
3.9pF
C12
62pF
C13
2.2μF
C16
10μF
35V
C23
3.9pF
C24
62pF
C11
9.1pF
236
5C15
0.1μF
7
8
910 13
C17
62pF
C20
0.1μF
C18
2.2μF
C19
10μF
C21
10μF
35V
R3
2K
C3
0.001μF
C2
0.001μF
Q1
BCP56
R2
1.3K
QQ1
LM7805
C1
0.001μF
VDD
R5
10
Reference Circuit
Reference circuit schematic for ƒ = 770 MHz
Circuit Assembly Information
DUT PTFA072401EL or PTFA072401FL LDMOS Transistor
PCB LTN/PTFA072401E or LTN/PTFA072401F Rogers RO4350: 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper
Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.)
at 770 MHz
l1 0.025 λ, 50.7 W 5.84 x 1.65 0.230 x 0.065
l2, l3 0.048 λ, 38.4 W 11.18 x 2.54 0.440 x 0.100
l4 0.002 λ, 76.8 W 0.51 x 0.76 0.020 x 0.030
l5 0.145 λ, 76.8 W 35.43 x 0.76 1.395 x 0.030
l6 0.094 λ, 7.8 W 20.32 x 17.78 0.800 x 0.700
l7, l8 0.108 λ, 44.5 W 25.40 x 2.03 1.000 x 0.080
l9 0.140 λ, 6.5 W 29.97 x 21.59 1.180 x 0.850
l10 (taper) 0.058 λ, 6.5 W / 29.4 W 13.13 x 21.59 / 3.68 0.517 x 0.850 / 0.145
l11 (taper) 0.004 λ, 29.4 W / 38.4 W 0.84 x 3.68 / 2.54 0.033 x 0.145 / 0.100
l12 0.005 λ, 38.4 W 1.27 x 2.54 0.050 x 0.100
l13 0.016 λ, 50.7 W 3.76 x 1.65 0.148 x 0.065
Data Sheet – DRAFT ONLY 6 of 9 Rev. 04, 2012-02-16
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C7, C15, C20 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C5, Tantalum Capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C6 Capacitor, 4.7 µF, 16 V Digi-Key PCS3475CT-ND
C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF ATC 100B 620
C10, C22, C23 Ceramic capacitor, 3.9 pF ATC 100B 3R9
C11 Ceramic capacitor, 9.1 pF ATC 100B 9R1
C13, C18 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C14, C16, C19, C21 Tantalum Capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
L1, L2 Ferrite, 8.9 mm Digi-Key 240-2511-2-ND
Q1 Transistor Inneon Technologies BCP56
QQ1 Voltage Regulator National Semiconductor LM7805
R1 Chip resistor, 1.2k W Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3k W Digi-Key P1.3KGCT-ND
R3, R9 Chip resistor, 2k W Digi-Key P2KECT-ND
R4 Variable Resistor 2k W Digi-Key 3224W-202ETR-ND
R5, R6, R8 Chip resistor, 10 W Digi-Key P10ECT-ND
R7 Chip resistor 5.1k W Digi-Key P5.1KECT-ND
a 07 2 40 1 e fl _ c d_ 3 - 1 8 - 09
RF_IN RF_OUT
LM
VDD
VDD
VDD
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 7 of 9 Rev. 04, 2012-02-16
34.036
[1.340 ]
22.352±.200
[.880±.008]
1. 575
[.062] SPH
1.016
[.040]
C
L
3.962+.254
–.127
.156 +.010
–.005 ]
27.940
[1.100]
2X 12.700
[.500]
19.431±.510
[.765±.020 ]
9.779
[.385]
2X 4.826±.510
[. 190±.020]
45° X 2.032
[45° X .080]
4X R1.524
[R.060]
2X R1.626
[R.064]
L
C
D
S
G
C
L9.398
[.370]
H- 33288-2_po_03 -01- 2011
[
Package Outline Specications
Package H-33288-2
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D – drain; S – source; G – gate.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet – DRAFT ONLY 8 of 9 Rev. 04, 2012-02-16
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
3.962
+.254
–.127
[.156
+.010
–.005
]
S
23.114
[.910]
22.352±.200
[.880±.008]
1.575
[.062] SPH
1.016
[.040] C
L
4X R0.508
+. 015
–.005
[R.020
+. 001
–.000
]
2X 12.700
[.500]
19.431±.510
[.765±.020]
9.779
[.385]
2X 4.826±.510
[.190±.020]
45° X 2.032
[45° X .080] L
C
D
G
C
L
9.398
[.370]
H - 34288 -2 _po _02 -18- 2010
Package Outline Specications (cont.)
Package H-34288-2
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D – drain; S – source; G – gate.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
Data Sheet – DRAFT ONLY 9 of 9 Rev. 04, 2012-02-16
Edition 2012-02-16
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2009 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFA072401EL/FL V5
Condential, Limited Internal Distribution
Revision History: 2012-02-16 Data Sheet
Previous Version: 2011-04-01, Data Sheet
Page Subjects (major changes since last revision)
2 Updated product from V4 to V5, added order code
