BDW93CFP
BDW94CFP
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPES
■MON OLI T HIC DA RLING T O N
CONFIGURATION
■COMPLEMENTARY PNP - NPN DEVICES
■INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■FULLY MOLDE D INS ULAT E D PA CKAG E
■2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
Th e BDW 93CF P is a silicon Epitax ial-Bas e NPN
transistor in monolithic Darlington configuration
mounted in TO-220FP fully molded insulated
packa ge. It is intented for use in power linear
and switching applications.
The complementary PNP type is the BDW94CFP.
INT E R NAL SCH E M ATI C DIAG RA M
September 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93CFP
PNP BDW94CFP
VCBO Collector-Base Voltag e (IE = 0) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 100 V
ICCollector Current 12 A
ICM Collector Peak Current 15 A
IBBase Current 0.2 A
Ptot Total Dissipation at Tc ≤ 25 oC33 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PN P types vo ltage and current values are negative.
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
123
T0-220FP
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 3.8 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 10 0 V
VCB = 10 0 V Tcase = 150 oC100
5µA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = 80 V 1 mA
IEBO Emitter Cut-off Cu rrent
(IC = 0) VEB = 5 V
2mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA 100 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5 A IB = 20 mA
IC = 10 A IB = 100 mA 2
3V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 5 A IB = 20 mA
IC = 10 A IB = 100 mA 2.5
4V
V
hFE∗DC Current Ga in IC = 3 A VCE = 3 V
IC = 5 A VCE = 3 V
IC = 10 A VCE = 3 V
1000
750
100 20000
VF* Parallel-diode Forward
Voltage IF = 5 A
IF = 10 A 1.3
1.8 2
4V
V
hfe Small Signal Current
Gain IC = 1 A VCE = 10 V
f = 1 MHz 20
∗ P ulsed: P ulse duration = 300 µs, duty cycle 1.5 %
For PNP types volt ag e and current values are negative.
Safe O perat ing Area
BDW93CFP / BDW94CFP
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
BDW93CFP / BDW94CFP
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ ences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird pa rties w hich m ay resu lt from its use . No li cen s e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification menti oned in this publication are
subject to change without notice. This publication supersedes and r eplac es all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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BDW93CFP / BDW94CFP
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