MRF9135LR3 MRF9135LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large-signal, common -source amplifier
applications in 26 volt base station equipment.
•Typical N-CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: -47 dBc @ 30 kHz BW
•Internally Matched, for Ease of Use
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•Pb-Free and RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD298
1.7
W
W/°C
Storage Temperature Range Tstg - 65 to +200 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 0.6 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Charge Device Model C7 (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF9135L
Rev. 7, 8/2005
Freescale Semiconductor
Technical Data
880 MHz, 135 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI- 780
MRF9135LR3
CASE 465A-06, STYLE 1
NI- 780S
MRF9135LSR3
MRF9135LR3
MRF9135LSR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 450 µA)
VGS(th) 2 2.8 4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1100 mAdc)
VGS(Q) 3.25 3.7 5 Vdc
Drain-Source On -Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on) — 0.19 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 9 Adc)
gfs — 12 — S
Dynamic Characteristics
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 109 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 4.4 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) Single -Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier,
PAR = 9.8 dB @ 0.01% Probability on CCDF
Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
Gps 16 17.8 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
η22 25 — %
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
ACPR — -47 -45 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
IRL — -13.5 -9 dB
Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
Gps — 17 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
η— 24 — %
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
ACPR — -46 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 25 W Avg. N- CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
IRL — -12.5 — dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 135 W CW, IDQ = 1100 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
MRF9135LR3 MRF9135LSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. 880 MHz Test Circuit Schematic
Z1 0.430″ x 0.080″ Microstrip
Z2 0.430″ x 0.080″ Microstrip
Z3 0.800″ x 0.080″ Microstrip
Z4 0.200″ x 0.220″ Microstrip
Z5 0.110″ x 0.220″ Microstrip
Z6 0.175″ x 0.220″ Microstrip
Z7 0.200″ x 0.220″ x 0.630″ Taper
Z8 0.250″ x 0.630″ Microstrip
Z9 0.050″ x 0.630″ Microstrip
Z10 0.050″ x 0.630″ Microstrip
Z11 0.105″ x 0.630″ Microstrip
Z12 0.145″ x 0.630″ Microstrip
Z13 0.200″ x 0.630″ x 0.220″ Taper
Z14 0.180″ x 0.220″ Microstrip
Z15 0.110″ x 0.220″ Microstrip
Z16 0.200″ x 0.220″ Microstrip
Z17 0.900″ x 0.080″ Microstrip
Z18 0.360″ x 0.080″ Microstrip
Z19 0.410″ x 0.080″ Microstrip
PCB Arlon GX- 0300-55 -22, 0.030″, εr = 2.55
RF
INPUT
RF
OUTPUT
Z1
VGG
C1
C17
Z4
DUT
VDD
C3
Z2
Z12
C14
C23
C2
+++
C18 C20 C21 C22L2
C16C15
Z16Z13 Z14 Z17 Z18 Z19
L1
+
C9 C8 C7
+
B2 B1
C13
C11
C12
C10
C6
C5
Z5 Z6 Z7
C4
Z3 Z8 Z9
Z15
Z11Z10
C19
Table 5. 880 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads, Short 2743019447 Fair Rite
C1, C7, C17, C18 47 pF Chip Capacitors 100B470JP 500X ATC
C2, C16 0.6- 4.5 Variable Capacitors, Gigatrim 27271SL Johanson
C3 8.2 pF Chip Capacitor 100B8R2BP 500X ATC
C4, C15 0.8- 8.0 Variable Capacitors, Gigatrim 27291SL Johanson
C5, C6 12 pF Chip Capacitors 100B120JP 500X ATC
C8 20K pF Chip Capacitor 200B203MP50X ATC
C9, C20, C21, C22 10 µF, 35 V Tantalum Capacitors T491D106K035AS Kemet
C10, C11, C12, C13 7.5 pF Chip Capacitors 100B7R5JP 500X ATC
C14 11 pF Chip Capacitor 100B110JP 500X ATC
C19 0.56 µF, 50 V Chip Capacitor C1825C564K5RA7800 Kemet
C23 470 µF, 63 V Electrolytic Capacitor SME63VB471M12X25LL United Chemi- Con
L1, L2 12.5 nH Coilcraft inductors A04T- 5 Coilcraft
WB1, WB2 10 mil Brass Shim (0.205 x 0.530) RF- Design Lab RF- Design Lab
4
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
C20 C21 C22
C14
Figure 2. 880 MHz Test Circuit Component Layout
CUT OUT AREA
900 MHz
MRF9135L
Rev−02
WB1 WB2
L1 L2
C10
C9 B1
C11
C13
C12
C1 C2 C3
C4 C6
C7 C5
C8
B2
C18
C15
C16 C17
C19
C23
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF9135LR3 MRF9135LSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
10
22
1
0
60
18 40
16 30
14 20
12 10
10
20 50
900865 870 875 880 885 890 895
11
19
860
−60
35
IRL
Gps
ACPR
VDD = 26 Vdc
Pout = 25 W (Avg.)
IDQ = 1100 mA
N−CDMA IS−95 Pilot, Sync, Paging
Traffic Codes 8 through 13
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
Gps, POWER GAIN (dB)
18 30
17 25
16 20
15 −20
14 −30
13 −40
12 −50
−18
−10
−12
−14
−16
INPUT RETURN LOSS (dB)IRL,
ACPR (dBc)
100
15.5
19
1
IDQ = 1650 mA
1320 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Gps, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16
1100 mA
880 mA
10 100
−60
1
1650 mA
IDQ = 880 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
−20
−30
−40
−50
10
1100 mA
1320 mA
100
−80
−10
1
7th Order
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
−20
−30
−40
−50
−60
−70
10
5th Order
3rd Order
Gps
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
Gps, POWER GAIN (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
ηD
ηD, DRAIN EFFICIENCY (%)
6
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
TYPICAL CHARACTERISTICS
100
8
20
1
−60
60
Gps
IMD
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
Gps, POWER GAIN (dB)
18 40
16 20
14 0
12 −20
10 −40
10
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
ηD
6
20
1
−80
60
Gps
ACPR
750 kHz
VDD = 26 Vdc, IDQ = 1100 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging,
Traffic Codes 8 through 13
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. N-CDMA Performance Output Power
versus Gain, ACPR, Efficiency
Gps, POWER GAIN (dB)
10
18 40
16 20
14 0
12 −20
10 −40
8 −60
ALT
1.98 MHz
ηD
ηD, DRAIN EFFICIENCY (%)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
210
1011
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
1010
109
108
120 140 160 180 190
MTTF FACTOR (HOURS x AMPS2)
100 110 130 150 170 200
MRF9135LR3 MRF9135LSR3
7
RF Device Data
Freescale Semiconductor
N-CDMA TEST SIGNAL
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 11. Single- Carrier CCDF N - CDMA
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
Figure 12. Typical CDMA Spectrum
2.5−1.5 −1.0 −0.5 0 0.5 1.0 1.5
−95.2
4.8
−2.5
−ACPR @
30 kHz BW
f, FREQUENCY (MHz)
−10
−20
−40
−50
−60
−70
−80
−90
−30
0
2.0−2.0
+ACPR @
30 kHz BW
+ALT @
30 kHz BW
−ALT @
30 kHz BW
1.23 MHz BW
(dB)
8
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
f
MHz
Zsource
Ω
Zload
Ω
865
880
895
1.15 + j0.3
1.35 + j0.75
1.25 + j0.5
1.17 - j0.24
1.22 - j0.1
1.32 - j0.07
VDD = 26 V, IDQ =1100 mA, Pout = 25 W Avg.
Figure 13. Series Equivalent Source and Load Impedance
Zo = 2 Ω
f = 895 MHz
f = 865 MHz
f = 895 MHz
f = 865 MHz
Zload
Zsource
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF9135LR3 MRF9135LSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
NOTES
MRF9135LR3 MRF9135LSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465- 06
ISSUE G
NI-780
MRF9135LR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
CASE 465A- 06
ISSUE H
NI-780S
MRF9135LSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U−−− 0.040 −−− 1.02
Z−−− 0.030 −−− 0.76
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
12
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
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Document Number: MRF9135L
Rev. 7, 8/2005
