To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old company name remains in t his document, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electr onics Corporat ion (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume an y liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liabil ity whatso ever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified acco rding to the following three quality grades: “Standard”, “High Qu ality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic app liances; machine tool s; p ersonal electron i c equipment; and indust r ial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”: Aircraft; aerospace equ ipment; submersible repeaters; nuclear reactor control systems; medical equi pment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cterist ics such as the o ccurren ce of failure at a certai n rate and mal functi on s under certai n u se cond itions. Further,
Renesas Electronics pr oducts are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sal es office for details as to environmental matters such as t he environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Ren esas E lectro nics Corpor ation and also inclu des its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.1.00, Aug.20.2004, page 1 of 7
BCR3KM-12LA
Triac
Low Power Use
REJ03G0313-0100
Rev.1.00
Aug.20.2004
Features
• IT (RMS) : 3 A
• VDRM : 600 V
• IFGTI , IRGTI, IRGTⅢ : 20 mA (10 mA)Note5
• Viso : 2000 V
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yello w Card No. E223904
File No. E80271
Outline
2
13
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
TO-220FN
13
2
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general controlling
devices
Maximum Ratings
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
BCR3KM-12LA
Rev.1.00, Aug.20.2004, page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 3 A Commercial frequency, sine full wave
360° conduction, Tc = 109°C
Surge on-state current ITSM 30 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t3.7A
2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3W
Average gate power dissipation PG (AV) 0.3 W
Peak gate voltage VGM 6V
Peak gate current IGM 0.5 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage VTM — — 1.5 V Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
ΙVFGTΙ——1.5V
ΙΙ VRGTΙ——1.5V
Gate trigger voltageNote2
ΙΙΙ VRGTΙΙΙ ——1.5V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
ΙIFGTΙ——20
Note5 mA
ΙΙ IRGTΙ——20
Note5 mA
Gate trigger currentNote2
ΙΙΙ IRGTΙΙΙ ——20
Note5 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) ——4.0°C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 5 — — V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivit y (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and curr en t waveforms
(inductive load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR3KM-12LA
Rev.1.00, Aug.20.2004, page 3 of 7
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
2
10
1
10
0
10
–1
5
7
2
3
5
7
2
3
5
7
2
3
10
0
10
1
10
2
3725 3725
40
30
20
0
5
10
15
25
35
10
2
7
5
3
2
7
5
3
2
7
5
3
2
10
1
10
0
10
–1
–60 –40–20 0 20 40 60 80 100120140
23 5710
1
10
0
23 5710
2
23 5710
3
–60 –40–20 0 20 40 60 80 100120140
10
3
7
5
3
2
7
5
3
2
10
2
10
1
10
3
7
5
3
2
7
5
3
2
10
2
10
1
23 5710
0
10
–1
23 57
23 5710
3
23 57
10
1
23 5710
2
10
2
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
Tj = 25°C
Typical Example
I
RGT III
I
FGT I
, I
RGT I
P
G(AV)
= 0.3W
P
GM
= 3W
V
GT
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.2V
I
GM
=
0.5A
Typical Example
BCR3KM-12LA
Rev.1.00, Aug.20.2004, page 4 of 7
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
0 0.5 1.0 1.5 2.0 4.03.02.5 3.5
10
3
10
–1
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
23 5723 57 23 5723 57 10
4
102
101105
103
0 0.5 1.0 1.5 2.0 2.5 3.0 4.03.5
0
20
40
80
60
100
120
140
160
0
20
40
80
60
100
120
140
160
01.51.00.5 2.0 2.5 3.0
105
7
5
3
2
7
5
3
2
7
5
3
2
104
103
102
–60 –40–20 0 20 40 60 80 100120140
0 0.5 1.0 1.5 2.0 4.03.02.5 3.5
0
20
40
80
60
100
120
140
160
No Fins
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are black painted
aluminum and greased
60 × 60 × t2.3
100 × 100 × t2.3
120 × 120 × t2.3
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
BCR3KM-12LA
Rev.1.00, Aug.20.2004, page 5 of 7
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
–60 –40–20 0 20 40 60 80 100120140
–60 –40–20 0 20 40 60 80 100120140
10
3
7
5
3
2
7
5
3
2
10
2
10
1
10
3
7
5
3
2
7
5
3
2
7
5
3
2
10
2
10
1
10
0
2
3
5
7
2
3
5
7
7
10
1
10
0
23 5710
2
10
1
23 5710
3
23 5710
4
0
20
40
80
60
100
120
160
140
10
3
7
5
3
2
7
5
3
2
10
2
10
1
10
0
10
1
10
2
3725 3725
10
0
10
1
10
2
3725 372 5
–60 –40–20 0 20 40 60 80 100120140
0
20
40
80
60
100
120
140
160
Typical Example
Typical Example
DistributionT2+, G–
Typical Example
T2+, G+
T2–, G–Typical Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Typical Example
I
RGT III
I
RGT I
I
FGT I
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
BCR3KM-12LA
Rev.1.00, Aug.20.2004, page 6 of 7
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Characteristics Test Circuits
330Ω
330Ω
330Ω
6Ω
6Ω
6V
6V
A
V
A
V
6Ω
6V A
V
BCR3KM-12LA
Rev.1.00, Aug.20.2004, page 7 of 7
Package Dimensions
TO-220FN
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
2.0 Cu alloy
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10 ± 0.3
15 ± 0.3
14 ± 0.5
3 ± 0.3
3.6 ± 0.3
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
6.5 ± 0.3
2.6 ± 0.2
4.5 ± 0.2
2.8 ± 0.2
0.75 ± 0.15
φ 3.2 ± 0.2
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Plastic Magazine (T ube) 50 Type name BCR3KM-12LA
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR3KM-12LA-A8
Note : Please confirm the specification about the shipping in detail.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
RENESAS SALES OFFICES
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0
