AUIRF7416Q
HEXFET® Power MOSFET
02/28/2011
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Top View
8
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45
6
7
D
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DG
S
A
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Features
lAdvanced Process Technology
lLow On-Resistance
lP-Channel MOSFET
lDynamic dV/dT Rating
l150°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lLead-Free, RoHS Compliant
lAutomotive Qualified*
Description
Specifically designed for Automotive applications, this cel-
lular design of HEXFET® Power MOSFETs utilizes the lat-
est processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automo-
tive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-
tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature
(TA) is 25°C, unless otherwise specified.
SO-8
AUIRF7416Q
AUTOMOTIVE GRADE
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
-30V
R
DS(on)
max. 0.02Ω
I
D
-10A
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -10
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V -7.1
I
DM
Pulsed Drain Current
c
-45
P
D
@T
A
= 25°C Power Dissipation 2.5
Linear Derating Factor 0.02 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy
d
370 mJ
dv/dt Peak Diode Recovery dv/dt
e
-5.0 V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Max. Units
R
θJA
Junction-to-Ambient
g
50 °C/W
W
A
°C-55 to + 150
PD - 97642
AUIRF7416Q
2www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
Δ
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
-0.024
–––
V/°C
–––
–––
0.020
–––
–––
0.035
GS(th)
Gate Threshold Voltage
-1.0
–––
-2.04
gfs
Forward Transconductance
5.6
–––
–––
I
DSS
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-25
I
GSS
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
61
92
Q
gs
Gate-to-Source Charge
–––
8.0
12
Q
gd
Gate-to-Drain ("Miller") Charge
–––
22
32
t
d(on)
Turn-On Delay Time
–––
18
–––
t
r
Rise Time
–––
49
–––
t
d(off)
Turn-Off Delay Time
–––
59
–––
t
f
Fall Time
–––
60
–––
C
iss
Input Capacitance
–––
1700
–––
C
oss
Output Capacitance
–––
890
–––
C
rss
Reverse Transfer Capacitance
–––
410
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
SD
Diode Forward Voltage
–––
–––
-1.0
t
rr
Reverse Recovery Time
–––
56
85
ns
T
J
= 25°C,I
F
= -5.6A
Q
rr
Reverse Recovery Charge
–––
99
150
nC
di/dt = 100A/μs
e
-45
––– –––
––– –––
MOSFET symbol
showing the
V
DS
= -24V
-3.1
nA
μA
A
pF
ns
nC
I
D
= -5.6A
R
G
= 6.2
Ω
T
J
= 25°C, I
S
= -5.6A, V
GS
= 0V
e
integral reverse
p-n junction diode.
Conditions
R
D
= 2.7
Ω,
See Fig. 10
f
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -10V, See Fig. 6 & 9
f
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -5.6A
f
V
GS
= 20V
V
DD
= -15V
R
DS(on)
Static Drain-to-Source On-Resistance ΩV
GS
= -4.5V, I
D
= -2.8A
f
Conditions
V
DS
= -10V, I
D
= -2.8A
I
D
= -5.6A
V
GS
= -20V
V
DS
= V
GS
, I
D
= -250μA
AUIRF7416Q
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
Qualification Information
†
SO-8 MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Charged Device
Model
Class C5 (+/- 1125V)
†††
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/- 425V)
†††
AEC-Q101-002
Human Body Model Class H1B (+/- 1000V)
†††
AEC-Q101-001
AUIRF7416Q
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
D
DS
20μs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20μs PULSE WIDTH
T = 150°C
J
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20μs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -5.6A
D
AUIRF7416Q
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Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1000
2000
3000
4000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 20406080100
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
V = -24V
V = -15V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE 9
I = -5.6A
D
1
10
100
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-V , Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
AUIRF7416Q
6www.irf.com
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 9a. Basic Gate Charge Waveform
+
-
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
-10V
D.U.T. VDS
ID
IG
-3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-10V
Q
G
Q
GS
Q
GD
V
G
Charge
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
AUIRF7416Q
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
25 50 75 100 125 150
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
-2.5A
-4.5A
-5.6A
AUIRF7416Q
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For P-Channel HEXFETS
*
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
VGS*
**
AUIRF7416Q
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
F7416Q
AUIRF7416Q
10 www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
AUIRF7416Q
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Ordering Information
Base part
number
Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF7416Q SO-8 Tube 95 AUIRF7416Q
Tape and Reel 2500 AUIRF7416QTR
AUIRF7416Q
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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