KSD-T0C039-000 2
2N3906N
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -40 V
Emitter-base voltage VEBO -5 V
Collector current IC -200 mA
Collector power dissipation PC 400 mW
Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
°C
Electrical Characteristics Ta=25°C
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO I
C=-1mA, IB=0 -40 - - V
Collector cut-off current ICBO V
CB=-40V, IE=0 - - -50 nA
Emitter cut-off current IEBO V
EB=-5V, IC=0 - - -50 nA
DC current gain hFE V
CE=-1V, IC=-10mA 100 - 300 -
Collector-emitter saturation voltage VCE(sat) I
C=-50mA, IB=-5mA - - -0.4 V
Base-emitter voltage VBE V
CE=-1V, IC=-10mA - -0.73 -0.95 V
Transition frequency fT V
CE=-20V, IC=-10mA - 350 - MHz
Collector output capacitance Cob V
CB=-5V, IE=0, f=1MHz - - 4.5 pF
Turn on delay time td - - 35 ns
Rise time tr
VCC=-3V, VBE(off)=-0.5V,
IC=-10mA, IB1=-1mA - - 35 ns
Storage time tstg - - 225 ns
Fall Time tf
VCC=-3V, IC=-10mA,
IB1=IB2=-1mA - - 75 ns