1. Product profile
1.1 General description
150 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performa nce in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, rega rd in g Re str ictio n of Haza rd ous Sub s tances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications i n the 2500 MHz to
2700 MHz frequency range
BLF7G27L-150P;
BLF7G27LS-150P
Power LDMOS transistor
Rev. 1 — 12 November 2010 Product data sheet
Table 1. Typical performance
Typical RF performance at Tcase = 25
°
C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) GpηDACPR885k ACPR5M
(MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc)
IS-95 2500 to 2700 1200 28 30 16.5 26 −47[1] -
Single carrier W-CDMA 2500 to 2700 1200 28 45 16.5 31 - −38[2]
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 2 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF7G27L-150P (SOT5 39A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF7G27LS-150P (SOT5 39B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
3
5
1
2
sym11
7
5
12
43 4
3
5
1
2
sym11
7
Table 3. Ordering informati on
Type number Package
Name Description Version
BLF7G27L-150P - flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads SOT539A
BLF7G27LS-150P - earless flanged balanced LDMOST ceramic package;
4 leads SOT539B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 37 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 3 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Test information
Remark: All testing performed in a class-AB prod uction test circuit.
7.1 Ruggedness in class-AB operation
The BLF7G27L-150P and BLF7G27LS-150P are capable of withstanding a load
mismatch corr es po nd in g to VSWR = 20 : 1 throug h all phases under the followin g
conditions: VDS =28V; I
Dq = 1200 mA; PL= 35 W (IS-95); f = 2500 MHz.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80°C; PL= 30 W 0.25 K/W
Table 6. Characteristics
Tj = 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=1mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 100 mA 1.3 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 5 μA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 16.75 19 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 500 nA
gfs forward transconductance VDS =10V; I
D= 3.57 A - 0.86 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=3.5A -0.14-Ω
Table 7. Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-9 5 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). P AR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1= 2500 MHz; f2= 2700 MHz; RF performance at VDS =28V; I
Dq =1200mA;
Tcase =25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 30 - W
Gppower gain 14.8 16.5 - dB
RLin input return loss - −10 - dB
ηDdrain efficiency 22 26 - %
ACPR885k adjacent channel power ratio (885 kHz) −43 −47 - dBc
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 4 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1. Single carrier IS-95 power gain as a function of
load power; typical values Fig 2. Single carrier IS-95 drain efficiency as a
function of load power; typical v alues
PL (W)
0 1008040 6020
001aam987
15
16
17
Gp
(dB)
14
(1)
(2)
(3)
PL (W)
0 1008040 6020
001aam988
20
30
10
40
50
ηD
(%)
0
(1)
(3)
(2)
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 5 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3. Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical v alues
PL (W)
0 1008040 6020
001aam989
0
ACPR885
(dBc)
−20
−40
−60
−70
−50
−30
−10
(3)
(2)
(1)
PL (W)
0 1008040 6020
001aam990
−40
−60
−20
0
ACPR1980
(dBc)
−80
(3)
(2)
(1)
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5. Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
Fig 6. Single carrier IS-95 peak power as a function
of load power; typical values
PL (W)
0 1008040 6020
001aam991
4
8
12
PA R
0
(1)
(2)
(3)
PL (W)
0 1008040 6020
001aam992
100
150
50
200
250
PL(M)
(W)
0
(1)
(2)
(3)
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 6 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
7.3 Pulsed CW
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 7. Pulsed CW power gain as a function of load
power; typical values Fig 8. Pulsed CW drain efficiency as a function of
load power; typical values
PL (W)
0 20016080 12040
001aam993
14
15
13
16
17
Gp
(dB)
12
(3)
(2)
(1)
PL (W)
0 20016080 12040
001aam994
20
40
60
ηD
(%)
0
(1)
(3)
(2)
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 7 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
7.4 Single carrier W - CDMA
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 9. Single carrier W-CDMA powe r gain as a
function of load power; typical values Fig 10. Single carrier W-CDMA drain efficiency as a
function of load power; typical v alues
PL (W)
0 1208040
001aam995
15
16
17
Gp
(dB)
14
(3)
(1)
(2)
001aam996
PL (W)
0 1208040
20
30
10
40
50
ηD
(%)
0
(1)
(3)
(2)
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 8 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 11. Single car r ie r W-CDMA AC PR at 5 MH z as a
function of load power; typical values Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
function of load power; typical v alues
PL (W)
0 1208040
001aam997
−40
−20
0
ACPR5M
(dBc)
−60
(2)
(1)
(3)
PL (W)
0 1208040
001aam998
0
ACPR10M
(dBc)
−70
−60
−50
−40
−30
−20
−10
(2)
(1)
(3)
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 13. Single carrie r W -CDMA pe ak-to-averag e power
ratio as a function of load power;
typical values
Fig 14. Single carrier W-CDMA peak output power as a
function of load power; typical v alues
001aam999
PL (W)
0 1208040
4
2
6
8
PA R
0
(2)
(1)
(3)
PL (W)
0 1208040
001aan000
100
200
300
PL(M)
(W)
0
(3)
(1)
(2)
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 9 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
8. Package outline
Fig 15. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 10-02-02
00-03-03
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
F
langed balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539
A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 10 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
Fig 16. Package outline SOT539B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
09-10-16
10-02-02
Unit(1)
mm
max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03
0.25
A
Dimensions
E
arless flanged balanced LDMOST ceramic package; 4 leads SOT539
B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.77
32.13
U2w2
0.25
mm
max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395
0.01
0.007
0.004
0.54
1.005
0.995
0.089
0.079
1.275
1.265
0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
A
F
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 11 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
IS-95 Interim Standard 95
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor
N-CDMA Narrowband Code Division Multiple Access
PAR Peak-to-Average power Ratio
RF Radio Frequency
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 9. Re vision history
Document ID Release date Data sheet status Change notice Supersedes
BLF7G27L-150P_7G27LS-150P v.1 20101112 Product data sheet - -
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 12 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Draft — The document is a draft version only. The content is still under
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Short data sheet — A short data sheet is an extract from a full data sheet
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full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
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Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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Customers are responsible for the design and ope ration of their applications
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contain s the product specification.
BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 November 2010 13 of 14
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
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In the event that customer uses the product for design-in and use in
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Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2010
Document identifier: BLF7G27L-150P_7G27LS-150P
Please be aware that important notices concerning this document and the product(s)
described herei n, have been included in section ‘Legal information’.
13. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning in formation. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Single carrier IS-95. . . . . . . . . . . . . . . . . . . . . . 4
7.3 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.4 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12 Contact information. . . . . . . . . . . . . . . . . . . . . 13
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
