AP9474GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D D Single Drive Requirement D D BVDSS 60V RDS(ON) 10.5m ID Surface Mount Package SO-8 S S S 12.8A G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 60 V +20 V 3 12.8 A 3 9.6 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 50 A PD@TA=25 Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 200902172 AP9474GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=1mA 60 - - V VGS=10V, ID=12A - - 10.5 m VGS=6V, ID=10A - - 13 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=10A - 25 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=10A - 51 84 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 17 - nC VDS=30V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 43 - ns tf Fall Time RD=30 - 20 - ns Ciss Input Capacitance VGS=0V - 2115 3400 pF Coss Output Capacitance VDS=25V - 260 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 200 - pF Min. Typ. IS=1.5A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 43 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9474GM 50 50 10V 7.0V 5.0V 4.5V 40 ID , Drain Current (A) 40 ID , Drain Current (A) T A =150 o C 10V 7.0V 5.0V 4.5V o T A =25 C 30 20 30 20 V G =3.0V V G =3.0V 10 10 0 0 0 1 2 3 0 4 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 Fig 2. Typical Output Characteristics 14 2.0 I D =10A I D =12A T A =25 o C Normalized RDS(ON) V G =10V 12 RDSON (m) 2 V DS , Drain-to-Source Voltage (V) 10 1.6 1.2 0.8 8 0.4 6 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 8 1.2 Normalized VGS(th) (V) 10 o T j =150 C 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) T j =25 o C IS (A) 6 4 2 1 0.8 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9474GM 12 f=1.0MHz 10000 V DS =48V 10 Ciss 1000 8 C (pF) VGS , Gate to Source Voltage (V) I D =10A 6 Coss Crss 100 4 2 10 0 0 10 20 30 40 50 1 60 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 100us 1ms 10ms 1 100ms 0.1 1s o T A =25 C Single Pulse DC Normalized Thermal Response (Rthja) 1 10 ID (A) 9 V DS , Drain-to-Source Voltage (V) DUTY=0.5 0.2 0.1 PDM 0.1 t T 0.05 Duty factor = t/T Peak Tj = P DM x Rthja + Ta 0.02 Rthja = 125/W 0.01 Single Pulse 0.01 0.01 0.01 0.1 1 10 100 0.001 0.01 0.1 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4