FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFETTM General Description Features The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. * Q2: RDS(on) = 28 m @ VGS = 4.5V * Q1: Optimized for low switching losses Low gate charge (6.5 nC typical) 6.5A, 30V RDS(on) = 29 m @ VGS = 10V RDS(on) = 38 m @ VGS = 4.5V 1 /S D2 1 /S D2 D1 D Q2 5 D 3 7 G SO-8 S2 1 2 /D S1 S S Absolute Maximum Ratings S G Drain-Source Voltage Gate-Source Voltage ID Drain Current Q2 - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation PD (Note 1a) Q1 Units 30 30 20 7.9 30 16 6.5 20 V V A 2 1.6 1 0.9 -55 to +150 C (Note 1a) 78 C/W (Note 1) 40 C/W (Note 1a) (Note 1b) (Note 1c) TJ, TSTG 1 TA = 25C unless otherwise noted Parameter VDSS VGSS 2 Q1 8 2 G Pin 1 SO-8 Symbol 4 6 D1 D RDS(on) = 20 m @ VGS = 10V 7.9A, 30V The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. D Optimized to minimize conduction losses Includes SyncFET Schottky body diode Operating and Storage Junction Temperature Range W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6986S FDS6986S 13" 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS6986S Rev C(W) FDS6986S April 2001 TA = 25C unless otherwise noted Symbol Test Conditions Parameter Type Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 16 V, VDS = 0 V Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V VGS = -16 V, VDS = 0 V On Characteristics Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 30 1 1 V 20 23 mV/C A 500 1 100 NA -100 nA 3 3 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A Q2 Q1 VGS(th) TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25C Q2 -6 ID = 250 uA, Referenced to 25C Q1 -4 RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.9 A VGS = 10 V, ID = 7.9 A, TJ = 125C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 6.5 A VGS = 10 V, ID = 6.5 A, TJ = 125C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V Q2 16 24 23 25 37 30 ID(on) On-State Drain Current gFS Forward Transconductance VDS = 5 V, ID = 7.9 A VDS = 5 V, ID = 6.5 A Q1 Q2 Q1 Q2 Q1 2.4 1.6 mV/C 20 32 28 29 49 38 m A 30 20 23 22 S 1233 695 344 117 106 58 pF Dynamic Characteristics VDS = 10 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Q2 Q1 Q2 Q1 Q2 Q1 pF pF (Note 2) VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2: VDS = 15 V, ID = 7.9 A, VGS = 5 V Q1: VDS = 15 V, ID = 6.5 A, VGS = 5 V Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 8 7 5 4.5 25 20 11 2.5 11 6.5 5 2.5 4 1.3 16 14 10 9 40 36 20 5 16 9 ns ns ns ns nC nC nC FDS6986S Rev C (W) FDS6986S Electrical Characteristics Electrical Characteristics Symbol (continued) Parameter TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current tRR Reverse Recovery Time QRR Reverse Recovery Charge VSD Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 1.3 A Voltage IF = 10 A, diF/dt = 300 A/s Q2 Q1 Q2 (Note 3) (Note 2) (Note 2) Q2 Q1 3.0 1.3 A 17 ns 12.5 nC 0.5 0.74 0.7 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 2 0.02 in pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. FDS6986S Rev C (W) FDS6986S Typical Characteristics: Q2 2.6 50 VGS = 10V 6.0V VGS = 4.0V 5.0V 40 2.2 4.5V 1.8 30 4.5V 5.0V 4.0V 1.4 20 6.0V 8.0V 10V 1 10 3.5V 0.6 0 0 1 2 0 3 10 20 30 40 50 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 1.9 ID = 10A VGS = 10V ID = 5A 0.05 1.6 0.04 1.3 o 0.03 TA = 125 C 1 0.02 o TA = 25 C 0.7 0.01 0.4 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 50 VGS = 0V VDS = 5V o TA = -55 C o 25 C 40 1 o o TA = 125 C 125 C o 30 25 C 0.1 o -55 C 20 0.01 10 0.001 0 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6986S Rev C (W) FDS6986S Typical Characteristics: Q2 10 2000 ID =10A VDS = 5V 8 f = 1MHz VGS = 0 V 10V 1600 15V CISS 6 1200 4 800 2 400 0 0 COSS CRSS 0 3 6 9 12 15 18 21 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 RDS(ON) LIMIT 100s SINGLE PULSE RJA = 135C/W TA = 25C 40 1ms 10 10ms 100ms 30 1s 1 10s DC 20 VGS = 10V SINGLE PULSE 0.1 10 o RJA = 135 C/W o TA = 25 C 0.01 0 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. FDS6986S Rev C (W) FDS6986S Typical Characteristics Q1 2.25 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.5V 6.0V 3.5V 15 3.0V 10 5 2.5V 2 VGS = 3.0V 1.75 1.5 3.5V 1.25 4.5V 6.0V 10V 1 0.75 0 0 0.5 1 1.5 2 2.5 0 3 5 Figure 11. On-Region Characteristics. 15 20 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.075 ID = 3.3 A ID = 6.5A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.065 0.055 TA = 125oC 0.045 0.035 TA = 25oC 0.025 0.6 -50 -25 0 25 50 75 100 125 0.015 150 2 o TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. 10 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC VDS = 5V IS, REVERSE DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) o 25 C 16 125oC 12 8 4 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6986S Rev C (W) FDS6986S Typical Characteristics Q1 1000 f = 1MHz VGS = 0 V VDS = 5V ID = 6.5A 10V 8 800 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 600 400 200 COSS CRSS 0 0 0 3 6 9 12 0 4 Qg, GATE CHARGE (nC) Figure 17. Gate Charge Characteristics. 16 20 P(pk), PEAK TRANSIENT POWER (W) 50 100s ID, DRAIN CURRENT (A) 12 Figure 18. Capacitance Characteristics. 100 10 1ms RDS(ON) LIMIT 10ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RJA = 135oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RJA = 135C/W TA = 25C 40 30 20 10 0 0.001 100 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 t1, TIME (sec) Figure 19. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 135 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6986S Rev C (W) FDS6986S Typical Characteristics (continued) This section copied from FDS6984S datasheet SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 3A/DIV IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986S. 0.1 125oC 0.01 0.001 o 25 C 0.0001 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/DIV Figure 22. FDS6986S SyncFET body diode reverse recovery characteristic. 3A/DIV For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A). 0V 10nS/DIV Figure 23. Non-SyncFET (FDS6690A) body diode reverse recovery characteristic. FDS6986S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1