12/2008
AWM6433
3.4 - 3.6 GHz
WiMAX Power Amplier Module
PRELIMINARY DATA SHEET - Rev 1.0
M35 Package
12 Pin 4.5 mm x 4.5 mm x 1.0 mm
Surface Mount Module
FEATURES
InGaP HBT Technology
30 dB Gain
< 3 % EVM at +22 dBm (+3.3 V Supply)
4 % EVM at +23 dBm (+3.3 V Supply)
< 3 % EVM at +23 dBm (+4.2 V Supply)
4 % EVM at +24 dBm (+4.2 V Supply)
High Efciency
Integrated 25 dB Attenuator
Integrated Output Power Detector
50 Matched RF Ports for Reduced External
Component Count
4.5 mm x 4.5 mm x 1.0 mm Surface Mount
Module, Materials Set Consistent with RoHS
Directives
APPLICATIONS
WiMAX Tranceivers That Support the IEEE
802.16d-2004, IEEE 802.16e-2005, and the
ETSI EN301-021 Wireless standards
PRODUCT DESCRIPTION
The ANADIGICS AWM6433 WiMAX Power Amplier
is a high performance device that delivers exceptional
linearity and efciency at high levels of output power.
Designed for portable or mobile applications in the
3.4-3.6 GHz band, it supports the IEEE 802.16e-2005
wireless standard, as well as the IEEE 802.16d-2004
and ETSI EN301-021 standards.
The device requires only a nominal +3.3 V supply and
a low-current bias input. An increase in supply voltage
Figure 1: Functional Block Diagram
produces an increase in the maximum linear output
power. The integrated detector can be used to monitor
output power, and the integrated 25 dB step attenuator
enables gain control. No external circuits are required
for biasing or RF impedance matching, thus reducing
external component costs and facilitating circuit board
designs.
The AWM6433 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability, and ruggedness. It is
offered in a 4.5 mm x 4.5 mm x 1.0 mm surface mount
module optimized for use in a 50 system.
Ste p
A t t e nuat or
P o w e r
De t e ctor
B i as
Control
S u pply
V o l tag e
Supply
V o l tag e
A t t e nuat or
Control
De t e ctor
Ouput
R F I nput R F Output
Matching
Ne twork
B i as
V o l tag e
Ground
2PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
VCC
RFOUT
VBIAS
RFIN
DET
GND
1
GND
10
2
3
4
5
6
9
8
7
VCC
GND
GND
GND
12
11
VCC
VATTN
PIN NAME DESCRIPTION
1 VCC Supply Voltage
2RFIN RF Input
3GND Ground
4V
BIAS
Bias/Shutdown
5 VCC Supply Voltage
6VATTN Attenuator Control
7DET Detector Output
8GND Ground
9GND Ground
10 RFOUT RF Output
11 GND Ground
12 VCC Supply Voltage
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions dened in the electrical specications.
PARAMETER MIN MAX UNIT COMMENTS
Supply Voltage (VCC) 0 +5.0 V
Bias Voltage (VBIAS) 0 +3.0 V
Attenuator Control Voltage (VATTN) 0 +3.7 V
RF Input Power -0dBm OFDM modulated signal
ESD Rating
Human Body Model
Charged Device Model
TBD
TBD
-
-V
MSL Level TBD - -
Storage Temperature -40 +150 °C
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency (f) 3400 -3600 MHz
Supply Voltage (VCC)+2.9 +3.3 +4.2 V
Bias Voltage (VBIAS)+2.80
0
+2.85
-
+2.90
+0.7 VPA"on"
PA"shut down"
Attenuator Control Voltage (VATTN)
Logic High
Logic Low
+2.3
0
-
-
+3.7
+0.7 VAttenuator enabled
Nominal gain
RF Output Power (POUT)-+23 -dBm
Case Temperature (TC)-40 -+85 °C
4PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
Table 4: Electrical Specications
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, f = 3.6 GHz, 50 system)
Notes:
1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted.
(2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS
application note titled, “AWM6423 Reduced leakage current in Off State.”
PARAMETER MIN TYP MAX UNIT COMMENTS
Gain -31 -dB
Attenuator Step -25 -dB
Output Power Meets Spectrum Mask -+24 -dBm ETSI EN301-021 Type G
EVM -
-
2.8
4
3.2
-%at +22 dBm POUT
at +23 dBm POUT
Output P1dB -+29 -dBm CW
Output IP3 -+40 -dBm two CW tones, +19 dBm
output per tone
Harmonics --30 -dBc at +24 dBm POUT
Power-Added Efficiency -23 -%at +24 dBm POUT
Power Detector Voltage
at +24 dBm POUT
at +14 dBm POUT
-
-
+2.15
+0.85
-
-VHigh impedance load
Quiescent Current -135 -mA
Current Consumption
VCC
VCC
VBIAS
VATTN
-
-
-
-
280
325
6.5
0.2
-
-
8.0
1.0
mA
at +22 dBm POUT
at +24 dBm POUT
Logic High = +3.3 V
Leakage Current
(2)
-1.7 3.0 mA
PA shut down (VBIAS = 0V)
See figure 7 Application
Circuit.
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
5
PERFORMANCE DATA
Figure 3: Gain vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
Figure 4: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
Figure 5: Supply Current vs. Output Power
(TC = +25 °C, VCC = +3.3V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
Figure 6: Detector Voltage vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
25
26
27
28
29
30
31
32
33
34
35
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Gain (dB)
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
EVM (%)
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Detector Voltage (V)
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
6PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
APPLICATION INFORMATION
Transmit Disable and Attenuator Control
The power amplier is disabled by setting VBIAS below
+0.7 V. The step attenuator is enabled by applying a
Figure 7: Application Circuit
logic high to VATTN; the PA exhibits nominal gain when
a logic low is applied to VATTN.
GND
at slug
RF IN 2
9
1
67
12
85
4
3
V
CC
V
BIAS
GNDRF
IN
GND
V
CC
GND
V
CC
GND
RF
OUT
V
CC
V
CC
RF OUT
V
ATTN
DET
V
CC
V
ATTN
DET
OUT
4.7 K
V
BIAS
10
11
2.2 F
0.1 F
0.01 F1 F2.2 F
0.1 F
100 pF
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
7
Figure 8: Land Pattern
8PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
PACKAGE OUTLINE
Figure 9: M35 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
9
AWM6433
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE
RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING
AWM6433RM35P8 -40 °C to +85 °C
12 Pin
4.5 mm x 4.5 mm x 1.0 mm
Surface Mount Module
2,500 piece Tape and Reel