GP1600FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
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FEATURES
■Non Punch Through Silicon
■Isolated Copper Baseplate
■Low Inductance Internal Construction
■1600A Per Module
APPLICATIONS
■High Power Inverters
■Motor Controllers
■Induction Heating
■Resonant Converters
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1600FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1600FSS18
Note: When ordering, please use the whole part number.
KEY PARAMETERS
VCES 1800V
VCE(sat) (typ) 3.5V
IC(max) 1600A
IC(PK) (max) 3200A
GP1600FSS18
Single Switch IGBT Module
Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: F
(See package details for further information)
C1E1
C2E2
G
Aux E
Aux C
C2C1
Aux C
G
Aux E E1 E2
External connection
External connection
GP1600FSS18
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VCES
VGES
IC
IC(PK)
Pmax
Visol
Test Conditions
VGE = 0V
-
Tcase = 50˚C for Tj = 125˚C
1ms, Tcase = 110˚C
Tcase = 25˚C, Tj = 150˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
kW
V
Max.
1800
±20
1600
2400
11.4
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Nm
Max.
11
20
8
150
125
125
5
2
10
Min.
-
-
-
-
-
–40
-
-
-
GP1600FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
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Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 80mA, VGE = VCE
VGE = 15V, IC = 1600A
VGE = 15V, IC = 1600A, Tcase = 125˚C
DC
tp = 1ms
IF = 1600A
IF = 1600A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
IF
IFM
VF
Cies
LM
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Max.
2
50
8
6.5
4
5
1600
3200
2.5
2.6
-
-
Typ.
-
-
-
5.5
3.5
4.3
-
-
2.2
2.3
180
15
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP1600FSS18
4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
1650
300
650
550
450
650
400
-
-
Typ.
1500
200
500
400
300
450
300
750
200
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 1600A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 50nH
IF = 1600A, VR = 50% VCES,
dIF/dt = 6000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
1900
330
800
700
500
800
650
-
-
Typ.
1700
200
650
500
350
600
550
850
320
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 1600A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 50nH
IF = 1600A, VR = 50% VCES,
dIF/dt = 5000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
GP1600FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
0
400
800
1200
2400
2800
3200
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12V
Common emitter
T
case
= 25˚C
2000
1600
V
ge
= 10V
0
400
800
1200
2400
2800
3200
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Collector current, IC - (A)
Vge = 20/15/12V
Common emitter
Tcase = 125˚C
2000
1600
Vge = 10V
01600200 400 Collector current, I
C
- (A)
0
100
700
Energy - (mJ)
T
case
= 125˚C
V
GE
= ±15V
V
CE
= 900V
R
g
= 2.2Ω
E
OFF
E
ON
E
REC
200
300
400
500
600
600 800 1000 1200 1400
0
200
400
600
800
1000
1200
1800
1600
1400
012345678910
Diode turn-off energy, E
off(diode)
- (mJ)
E
ON
E
OFF
E
REC
T
case
= 125˚C
V
GE
= ±15V
V
CE
= 900V
I
T
= 1600A
GP1600FSS18
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area
Fig. 9 Forward bias safe operating area Fig. 10 Transient thermal impedance
0
400
800
1200
1600
2000
2400
2800
3200
00.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V
F
- (V)
Foward current, I
F
- (A)
T
j
= 125˚C
T
j
= 25˚C
0.1
1
10
100
0.001 0.01 0.1 1 10
Pulse width, tp - (s)
Transient thermal impedance, Zth(j-c) - (˚C/kW)
Transistor
Diode
1
10
100
1000
10000
1 10 100 1000 10000
Collector-emitter voltage, V
ce
- (V)
Collector current, IC - (A)
I
C
max. (single pulse)
IC max. DC (continuous)
t
p
= 1ms
100µs
50µs
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Collector-emitter voltage, Vce - (V)
Collector current, I
C
- (A)
Conditions:
T
case
= 125˚C,
V
ge
= 15V,
R
g(off)
= 2.2Ω
GP1600FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
140
31.5
4x M8
28
5
38
6x M4
18.5
11 35
14.5 20
43.3 18
57 57
65 65
6x Ø7
15 15
2.5
16
C1E1
C2E2
G
Aux E
Aux C
6
5
62
62
Nominal weight: 1600g
Module outline type code: F
GP1600FSS18
8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ASSOCIATED PUBLICATIONS
Title Application Note
Number
Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869
Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
GP1600FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/9
www.dynexsemi.com
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5176-4 Issue No. 4.2 January 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
