Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Max
14.2 20
39 50
RθJC 2.5 3
W
TA=70°C 2.1
Power Dissipation A
TA=25°C PDSM
3
Repetitive avalanche energy L=0.1mH C135
A
mJ
Junction and Storage Temperature Range
A
PD
°C
50
25
-55 to 175
TC=100°C
Avalanche Current C30
ID
55
55
100
Pulsed Drain Current C
Power Dissipation B
TC=25°C
Continuous Drain
Current G
Maximum UnitsParameter
TC=25°C
TC=100°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 25
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Case BSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AOD452
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) =25V
ID = 55 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
General Description
The AOD452 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product
A
OD452 is Pb-free (meets ROHS &
Sony 259 specifications). AOD452L is a Green
Product ordering option. AOD452 and AOD452L are
electrically identical.
G
D
S
G D S
T
O-252
D-PAK
T
op View
Drain Connected to
T
ab
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
Symbol Min Typ Max Units
BVDSS 25 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 1.8 3 V
ID(ON) 100 A
6.5 8.5
TJ=125°C 9.7 12
11.5 14 m
Ω
gFS 35 S
VSD 0.72 1 V
IS55 A
Ciss 1230 1476 pF
Coss 315 pF
Crss 190 pF
Rg1.2 2 Ω
Qg(10V) 26.4 32 nC
Qg(4.5V) 13.5 nC
Qgs 3.9 nC
Qgd 7.75 nC
tD(on) 6.5 ns
tr10 ns
tD(off) 22.7 ns
tf6.2 ns
trr 23.06 27.5 ns
Qrr 15.25 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3:July 2005
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V, RL=0.6Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=12.5V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
mΩ
IS=1A, VGS=0V
VDS=5V, ID=10A
VGS=4.5V, ID=20A
Forward Transconductance
Diode Forward Voltage
RDS(ON) Static Drain-Source On-Resistance
IDSS µA
Gate Threshold Voltage VDS=VGS, ID=250µA
VDS=20V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250uA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=30A
Reverse Transfer Capacitance
IF=20A, dI/dt=100A/µs
VGS=0V, VDS=12.5V, f=1MHz
SWITCHING PARAMETERS
A
: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
10
20
30
40
50
60
012345
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
0
2
4
6
8
10
12
14
16
18
0 102030405060
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=4.5V, 20A
VGS=10V, 20A
0
5
10
15
20
25
30
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=20A
25°C
125°C
0
20
40
60
80
100
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=4V
3.5V
6V
7V
10V
4.5V
5V
3V
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0 5 10 15 20 25 30
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJC Normali zed Transient
Thermal Resistance
Coss
Cr
ss
0.1
1.0
10.0
100.0
1000.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C, TA=25°C
VDS=12.5V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
T
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJA Norm al i zed Transi ent
Thermal Resistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
T
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
60
0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
ID(A), Peak Aval anche Current
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Current rating ID(A)
DD
D
A
VBV
IL
t−
⋅
=
TA=25°C
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
TA=25°C
Alpha & Omega Semiconductor, Ltd.