PTF180101S LDMOS RF Power Field Effect Transistor 10 W, 1805 - 1880 MHz, 1930 - 1990 MHz 10 W, 2110 - 2170 MHz Description The PTF180101S is a 10-watt, internally-matched GOLDMOS(R) FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. PTF180101S Package H-32259-2 Features EDGE EVM Performance EVM and Efficiency vs. Output Power * * VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz 40 Efficiency 3 30 2 20 1 10 Efficiency (%) EVM RMS (Average %)x 4 RoHS-compliant, Pb-free package Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = -45 dBc Typical CW performance - Output power at P-1dB = 15 W - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Low HCI drift, excellent thermal stability Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power * * EVM 0 0 25 30 35 * 40 Output Power (dBm) * * RF Characteristics, EDGE Operation EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz Characteristic Symbol Min Typ Max Unit EVM (RMS) -- 1.1 -- % Modulation Spectrum @ 400 kHz ACPR -- -60 -- dBc Modulation Spectrum @ 600 kHz ACPR -- -70 -- dBc Gain Gps -- 19 -- dB Drain Efficiency D -- 28 -- % Error Vector Magnitude table continued on next page All published data at TCASE = 25C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10 Rev. P03, 2007-03-01 PTF180101S RF Characteristics, EDGE Operation (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 -- dB Drain Efficiency D 30 33 -- % Intermodulation Distortion IMD -- -30 -28 dBc RF Characteristics, WCDMA Operation WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W, f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit ACPR -- -45 -- dBc Gain Gps -- 18 -- dB Drain Efficiency D -- 20 -- % Adjacent Channel Power Ratio Two-tone Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps -- 18 -- dB Drain Efficiency @ -30 dBc IM3 D -- 37 -- % Intermodulation Distortion IMD -- -30 -- dBc DC Characteristincs Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 A V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) -- 0.83 -- Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Data Sheet 2 of 10 Rev. P03, 2007-03-01 PTF180101S Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -0.5 to +12 V Junction Temperature TJ 200 C Total Device Dissipation PD 58 W 0.333 W/C Above 25C derate by Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 10 W CW) RJC 3.0 C/W Ordering Information Type PTF180101S Package Outline H-32259-2 Package Description Thermally enhanced, surface mount Marking PTF180101S Typical Performance measurements taken in broadband test fixture EDGE Modulation Spectrum Performance EVM and Modulation Spectrum Performance VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz f = 1989.8 MHz, POUT = 3.5 W 50 8 40 600 kHz -70 30 -80 20 Efficiency -90 Efficiency (%) ACPR (dBc) EVM RMS (Average %) . 400 kHz -60 10 -100 0 25 30 35 7 400 kHz 6 5 4 -50 -60 600 kHz -70 -80 EVM 3 -90 2 -100 1 0.00 40 Output Power (dBm) Data Sheet -40 0.05 0.10 0.15 0.20 0.25 ACPR (dBc) -50 -110 0.30 Quiscent Drain Current (A) 3 of 10 Rev. P03, 2007-03-01 PTF180101S Typical Performance (cont.) Output Power, Gain & Efficiency (at P-1dB) vs. Frequency Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 0.18 A, f = 1990 MHz VDD = 28 V, IDQ = 0.18 A 60 20 50 25 70 Gain 40 18 30 Efficiency Gain (dB) 19 20 17 32 35 38 41 50 22 21 30 20 20 10 Gain 18 1900 44 40 Output Pow er 19 10 16 29 60 Efficiency 23 Efficiency (%) Gain (dB) 24 Output Power (dBm), Efficiency (%) 21 1920 1940 1960 1980 2000 0 2020 Frequency (MHz) Output Power (dBm) Power Gain vs. Output Power Broadband Test Fixture Performance VDD = 28 V, f = 1990 MHz VDD = 28 V, IDQ = 0.18 A, POUT = 10 W 15 50 21 Power Gain (dB) IDQ = 0.235 mA 20 IDQ = 0.180 mA IDQ = 0.135 mA 19 18 0 1 10 5 30 -5 Gain -15 20 10 0 1900 100 Output Power (W) Data Sheet 40 Return Loss 1930 1960 1990 Return Loss (dB) Gain (dB), Efficiency (%) Efficiency -25 -35 2020 Frequency (MHz) 4 of 10 Rev. P03, 2007-03-01 PTF180101S Typical Performance (cont.) Output Power vs. Supply Voltage Broadband Test Fixture Performance IDQ = 0.18 A, f = 1990 MHz VDD = 28 V, IDQ = 0.18 A, POUT = 4 W 30 20 25 10 20 0 Gain 15 -10 10 -20 Return Loss 5 Output Power (dBm) Efficiency Return Loss (dB) Gain (dB), Efficiency (%) 42 -30 0 1900 1930 1960 1990 41 40 39 38 37 -40 2020 22 24 28 30 32 Supply Voltage (V) Frequency (MHz) Intermodulation Distortion vs. Output Power Gate-Source Voltage vs. Case Temperature VDD = 28 V, IDQ = 0.18 A, f1 = 1990 MHz, f2 = 1991 MHz Voltage normalized to 1.0 V, series show current 1.04 -20 0.05 A 0.28 A 0.51 A 0.74 A 1.03 -30 Bias Voltage (V) 3rd Order IMD (dBc) 26 -40 -50 5th -60 -70 -80 32 34 36 38 40 0.97 A 1.20 A 1.00 0.99 0.98 0.96 -20 42 0 20 40 60 80 100 Case Temperature (C) Output Power, PEP (dBm) Data Sheet 1.01 0.97 7th 30 1.02 5 of 10 Rev. P03, 2007-03-01 PTF180101S Typical Performance, WCDMA Operation Two-Tone Drive-up Single-Carrier WCDMA Drive-Up VDD = 28V, IDQ = 135 mA, f = 2170 MHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 135 mA, f = 2170 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth -20 30 -35 25 -40 20 -45 15 IM3 -50 10 -55 -40 Adjacent Channel Power Ratio (dBc) -30 20 Efficiency 15 -45 ACPR -50 10 -55 5 Drain Efficiency (%) 35 Efficiency Drain Efficiency (%) Intermodulation Distortion (dBc) -25 25 -35 40 5 -60 0 20 25 30 35 40 0 -60 45 17 Output Power (dBm), PEP 22 27 32 37 Average Output Power (dBm) RD G E Broadband Circuit Impedance Data D Z Load 0.1 Z Source Z0 = 50 Z Load G 2020 MHz S MHz R 1920 jX R jX 7.3 -2.3 4.6 2.4 1930 8.1 -2.2 4.6 2.5 1960 8.3 -2.6 4.5 2.6 1990 6.5 -4.1 4.5 2.5 2000 6.3 -4.0 4.5 2.5 2020 6.2 -3.7 4.6 2.5 Data Sheet 6 of 10 0.2 0.1 Z Load 0 .0 Z Source ARD L OA D HS T OW T G N LE Frequency 1920 MHz Z Source 1920 MHz 2020 MHz 0. 1 Rev. P03, 2007-03-01 PTF180101S Reference Circuits VGG R1 C1 C5 R2 DUT C3 l1 l2 VDD C7 l5 R3 RF_IN C6 + C8 l4 l3 l6 l7 C4 C2 l8 RF_OUT C9 180101_sch Reference circuit schematic for 1990 MHz Circuit Assembly Information DUT PTF180101S PCB 0.76 mm [.030"] thick, r = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 LDMOS Transistor Rogers TMM4, 2 oz. Copper Electrical Characteristics at 1990 MHz1 0.133 0.096 0.155 0.008 0.286 0.247 0.145 0.008 Dimensions: L x W (mm) , 50 , 50 , 9.5 , 12.8 , 70 , 12.8 , 50 , 50 10.92 x 1.37 7.87 x 1.37 11.30 x 12.45 0.64 x 8.86 23.88 x 0.71 18.29 x 8.86 11.81 x 1.37 0.64 x 1.37 Dimensions: L x W (in.) 0.430 x 0.054 0.310 x 0.054 0.445 x 0.490 0.025 x 0.349 0.940 x 0.028 0.720 x 0.349 0.465 x 0.054 0.025 x 0.054 1Electrical characteristics are rounded. Data Sheet 7 of 10 Rev. P03, 2007-03-01 PTF180101S Reference Circuits (cont.) 1930 - 1990 MHz Operation Component C1, C3, C5, C8 C2 C4 C6 C7 C9 R1, R2, R3 Description Capacitor, 10 pF Capacitor, 1.7 pF Capacitor, 2.0 pF Capacitor, 0.1 F, 50 V Capacitor, 100 F, 50 V Capacitor, 0.6 pF Resistor, 220 ohm, 1/4 W Suggested Manufacturer ATC ATC ATC Digi-Key Digi-Key ATC Digi-Key P/N or Comment 100B 100 100B 1R7 100A 2R0 P4525-ND P5182-ND 100A 0R6 220QBK Suggested Manufacturer ATC ATC ATC Digi-Key Digi-Key ATC Digi-Key P/N or Comment 100B 100 100B 0R8 100A 2R2 P4525-ND P5182-ND 100A 1R0 220QBK 2.11 - 2.17 GHz Operation Component C1, C3, C5, C8 C2 C4 C6 C7 C9 R1, R2, R3 Description Capacitor, 10 pF Capacitor, 0.8 pF Capacitor, 2.2 pF Capacitor, 0.1 F, 50 V Capacitor, 100 F, 50 V Capacitor, 1.0 pF Resistor, 220 ohm, 1/4 W Reference circuit assembly diagram* (not to scale) *Gerber files for this circuit are available upon request. Data Sheet 8 of 10 Rev. P03, 2007-03-01 PTF180101S Package Outline Specifications Package H-32259-2 2X 3.30 [.130] 0.38 [.015] 1.78 [.070] 2X 0.200.03 [.008.001] 1.02 [0.040] 0.51 [0.020] CL 4X R0.25 [R.010] MAX. D 60 2X 1.27 [.050] 2X 3.30 [.130] 6.86 [.270] CL 10.160.25 [.400.010] C L 6.35 [.250]SQ 4X 0.51 [.020] 4X 0.25 MAX [.010] 2X 1.650.51 [.065.020] G LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE .000.002 (TYP) 7.37 [.290] REF 6.86 [.270] 0-7 DRAFT ANGLE 6.48 [.255] SQ 0.740.05 [.028.002] 2.88.25 [.114.01] 0.200.025 [.008.001] H-32259-2-1-2307 S Diagram Notes--unless otherwise specified: 1. Lead thickness: 0.21 0.03 [.008 .001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. P03, 2007-03-01 PTF180101S Confidential, Limited Internal Distribution Revision History: 2007-03-01 Previous Version: 2004-02-03 Page Subjects (major changes since last revision) all 1 Update document format Add RoHS-compliant information. 9 Correct package diagram and dimensions. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS(R) is a registered trademark of Infineon Technologies AG. Edition , 2007-03-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. P03, 2007-03-01