LD 262 …LD 264
GaAs-IR-Lumineszenzdioden-Zeilen
GaAs Infrare d Em itter Arrays
2001-02-22 1
Wesentliche Merkmale
• GaAs-IR-Lumineszenzdiode
• Hohe Zuverlässigkeit
• Gruppiert lieferbar
• Gehäusegleich mit BPX 80-Serie
• Miniatur-Gehäuse
Anwendungen
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb
• Barcodeleser
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Sensorik
• Drehzahlsteuerung
Typ
Type
IRED
pro Zeile
per Row
Maß „A“
Dimension “A”
Bestellnummer
Ordering Code
Gehäuse
Package
min. max.
LD 262 2 4.5 4.9 Q62703-Q70 Zeilenbauform, Leiterbandgehäuse,
klares Epoxy-Gießharz, linsenförmig,
Anschlüsse im 2.54-mm-Raster (1/10’’),
Kathodenkennzeichnung:
Nase am Lötspieß
Lead frame arrays, transparent epoxy
resin lens, solder tabs, lead spacing
2.54 mm (1/10’’), cathode marking:
projection at solder lead
LD 263 3 7 7.4 Q62703-Q71
LD 264 4 9.6 10 Q62703-Q72
Features
•GaAs infrared emitting diode
•High reliability
•Available in bins
•Same package as BPX 80 series
•Miniature package
Applications
•Miniature photointerrupters
•Barcode readers
•Industrial electronics
•For control and drive circuits
•Sensor technology
•Speed controller
2001-02-22 2
LD 262 …LD 264
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 80 °C
Sperrschichttemperatur
Junction temperature Tj80 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF50 mA
Stoßstrom, τ ≤ 10 µs, D = 0
Surge current IFSM 1.6 A
Verlustleistung
Power dissipation Ptot 70 mW
Wärmewiderstand
Thermal resistance RthJA
RthJL
750
650 K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 50 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 50 mA, tp = 20 ms
∆λ 55 nm
Abstrahlwinkel
Half angle ϕ± 15 Grad
deg.
Aktive Chipfläche
Active chip area A0.25 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L×B
L×W0.5 ×0.5 mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip surface to lens top H1.3 …1.9 mm
LD 262 …LD 264
2001-02-22 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 50 mA, RL = 50 Ω
Switching tim es, Ie from 10% to 90% and from
90% to 10%, IF = 50 mA, RL = 50 Ω
tr, tf1µs
Kapazität, VR = 0 V
Capacitance Co40 pF
Durchlaßspannung, IF = 50 mA, tp = 20 µs
Forward voltage VF1.25 (≤ 1.4) V
Sperrstrom, VR = 5 V
Reverse current IR0.01 (≤ 1) µA
Gesamtstrahlungsfluß, IF = 50 mA, tp = 20 ms
Total radiant flux Φe9mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 50 mA
Temperature coefficient of Ie or Φe,
IF = 50 mA
TCI– 0.55 %/K
Temperaturkoeffizient von VF, IF = 50 mA
Temperature coefficient of VF, IF = 50 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λpeak, IF = 50 mA
Temperature coefficient of λpeak, IF = 50 mA TCλ0.3 nm/K
Strahlstärke, IF = 50 mA, tp = 20 ms
Radiant intensity Ιetyp. 5 (≥ 2.5) mW/sr
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
LD 262 …LD 264
2001-02-22 4
Relati ve Sp ectral Emission
Irel = f (λ)
Forward Cu rrent
IF = f (VE), single pulse,
tp = 20 µs
Radiation Characteristics Irel = f (ϕ)
OHRD1938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHR01042
F
F
Ι
1
1
10
0
10
-1
10
10 -2
A
1.5 2 2.5 3 3.5 4 V 4.5
max.
typ.
OHR01878
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
010203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TC = 25 °C,
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
Ι
OHR01039
F
-1
10
10
0
1
10
2
10
10
-2 -1
10
0
10 A 10
1
Ι
e
Ι
e
(100 mA)
10
Ι
F
OHR02182
τ
1
2
10
3
10
4
10
mA
-5
10 10
-4 -3
10
-2
10
-1
10
0
10s
T
τ
=D
F
Ι
T
τ
DC
0,5
0,2
0,1
0,05
0
0,005
0,01
0,02
=
D
Max. Permissible Forward Current
IF = f (TA)
T
OHR01124
A
0
F
Ι
0 20 40 60 80 100C
mA
10
20
30
40
50
60
70
80
T
L
,
R
thJL
= 650 K/W
= 750 K/W
thJA
R
LD 262 …LD 264
2001-02-22 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
GEOY6367
7.4 (0.291)
7.0 (0.276)
0.7 (0.028)
0.6 (0.024)
Collector (BPX 83)
Cathode (LD 263)
2.54 (0.100)
spacing 1.5 (0.059)
2.1 (0.083)
2.7 (0.106)
2.5 (0.098)
3.2 (0.126)
3.6 (0.142)
3.0 (0.118)
3.5 (0.138)
1.9 (0.075)
1.7 (0.067)
position
Chip
0.25 (0.010)
0.15 (0.006)
0... 5˚
1.4 (0.055)
1.0 (0.039)
A
0.4
0.4 (0.016)
0.5 (0.020)
A
